• Title/Summary/Keyword: Target mobility

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Analysis of Iran's Air Defense Network and Implications for the Development of South Korea's Air Defense Network

  • Hwang Hyun-Ho
    • International Journal of Advanced Culture Technology
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    • v.12 no.2
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    • pp.249-257
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    • 2024
  • This study analyzes the current status and prospects of Iran's air defense network, focusing on the Russian-made S-300 system, and derives implications for the development of South Korea's air defense network. Iran's air defense network exhibits strengths such as long-range detection and interception capabilities, multi-target processing, high-altitude interception, and electronic warfare response. However, it also reveals weaknesses, including lack of mobility, difficulty in detecting low-altitude targets, obsolescence, training level of operating personnel, and vulnerability to electronic warfare. Real-world cases confirm these weaknesses, making the system susceptible to enemy evasion tactics, swarm drone attacks, and electronic warfare. Drawing from Iran's case, South Korea should establish a multi-layered defense system, strengthen low-altitude air defense and electronic warfare capabilities, foster the domestic defense industry for technological self-reliance, and enhance international cooperation. By addressing these aspects, South Korea can establish a robust air defense network and firmly protect its national security. Future research should aim to secure and analyze materials from the Iranian perspective for a more objective evaluation of Iran's air defense network and continuously track Iran's efforts to improve its air defense network and the trend of strengthening drone forces to predict changes in the Middle East security situation.

Study of Mobility for Radionuclides in Nuclear Facility Sites (원자력 시설물 주변에서의 방사성 오염물 거동 특성 연구)

  • Chang, Seeun;Park, JongKul;Um, Wooyong
    • Economic and Environmental Geology
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    • v.51 no.2
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    • pp.99-111
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    • 2018
  • In this study three target radionuclides ($^{60}Co$, $^{137}Cs$, and $^{125}Sb$) were reacted with solid samples collected from the nuclear facility sites to investigate their sorption and mobility behaviors for preparing unexpected nuclear accidents. The highest sorption distribution coefficients ($K_{ds}$) of target radionuclides ($^{60}Co=947mL/g$, $^{137}Cs=2105mL/g$, $^{125}Sb=81.3mL/g$) were found in topsoil layer under groundwater condition, and the $K_d$ values of three radionuclides decreased in the order of fractured rock and bedrock samples under the same groundwater condition. High $K_d$ values of $^{60}Co$ in topsoil layer and fracture rock resulted from the clay minerals present, and the $K_d$ values decreased 58-69 % under seawater condition due to high ionic strength. $^{137}Cs$ sorption was controlled by the ion exchange reaction with $K^+$ on flayed edge sites (FES) of mica. The $^{137}Cs$ sorption was the most affected by seawater (89-97 % decrease), while $^{125}Sb$ sorption was not much affected by seawater. As the results of column and batch experiments, the retardation factors (R) of $^{137}Cs$, $^{60}Co$, and $^{125}Sb$ were determined about 5400-7400, 2000-2500, and 250-415, respectively, indicating no significant transport for these radionuclides even in fractured zone with groundwater. These results suggest that even in the case of severe nuclear accident at the nuclear facilities the mobility of released radionuclides ($^{60}Co$, $^{137}Cs$, and $^{125}Sb$) can be significantly retarded by the topsoil layer and fractured rock. In addition, the results of this study will be used for the safety and environmental performance assessment of nuclear facilities.

Influence of Co-sputtered HfO2-Si Gate Dielectric in IZO-based thin Film Transistors (HfO2-Si의 조성비에 따른 HfSiOx의 IZO 기반 산화물 반도체에 대한 연구)

  • Cho, Dong Kyu;Yi, Moonsuk
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.2
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    • pp.98-103
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    • 2013
  • In this work, we investigated the enhanced performance of IZO-based TFTs with $HfSiO_x$ gate insulators. Four types of $HfSiO_x$ gate insulators using different diposition powers were deposited by co-sputtering $HfO_2$ and Si target. To simplify the processing sequences, all of the layers composing of TFTs were deposited by rf-magnetron sputtering method using patterned shadow-masks without any intentional heating of substrate and subsequent thermal annealing. The four different $HfSiO_x$ structural properties were investigated x-ray diffraction(XRD), atomic force microscopy(AFM) and also analyzed the electrical characteristics. There were some noticeable differences depending on the composition of the $HfO_2$ and Si combination. The TFT based on $HfSiO_x$ gate insulator with $HfO_2$(100W)-Si(100W) showed the best results with a field effect mobility of 2.0[$cm^2/V{\cdot}s$], a threshold voltage of -0.5[V], an on/off ratio of 5.89E+05 and RMS of 0.26[nm]. This show that the composition of the $HfO_2$ and Si is an important factor in an $HfSiO_x$ insulator. In addition, the effective bonding of $HfO_2$ and Si reduced the defects in the insulator bulk and also improved the interface quality between the channel and the gate insulator.

A Novel Two-step Channel Prediction Technique for Adaptive Transmission in OFDM/FDD System (OFDM/FDD 시스템에서 Target QoS 만족을 위한 다단계 적응전송 채널예측기법)

  • Heo Joo;Chang Kyung-Hi
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.31 no.8A
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    • pp.745-751
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    • 2006
  • The transmitter requires knowledge of the channel status information in order to adopt the adaptive modulation and coding scheme(AMC) for OFDM system. But in the outdoor environment which the users have high mobility, the channel status information from the users is outdated, so that it induces the degradation of system throughput and packet error rate(PER) performance. To solve this problem, researches about applying channel prediction technique to the AMC scheme have been proceeded. Most channel prediction techniques assume that there is no channel variation in the predefined time duration, e.g., a slot. As a result, those techniques cannot compensate the degradation of PER performance resulting from the rapid variation of channel during the slot duration. This paper introduces a novel channel prediction technique for OFDM/FDD system to support adaptive modulation and coding scheme over rapidly time-varying multipath fading channel. The proposed channel prediction technique considers the time-varying nature of channel during the slot duration. Simulation results show that the AMC scheme of OFDM/FDD system utilizing the proposed channel prediction technique can guarantee the target PER of 1% without any loss of system throughput compared with the case supported by the conventional channel prediction under ITU-R Veh A 30km/h.

Facilitated Transport: Basic Concepts and Applications to Gas Separation Membranes (촉진수송: 기본 개념 및 기체분리막 응용)

  • Park, Cheol Hun;Lee, Jae Hun;Park, Min Su;Kim, Jong Hak
    • Membrane Journal
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    • v.27 no.3
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    • pp.205-215
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    • 2017
  • Polymer membranes are cheap and easy in fabrication, and show a high permeability and selectivity, thus play pivotal roles in gas separation as well as water purification. However, polymer membranes typically exhibit the trade-off relation between permeability and selectivity; i.e. when the permeability is high, the selectivity is low and vice versa. Facilitated transport has been considered one of the solutions to address this issue. Over the last decades, facilitated transport concept had played an important role in preparing the membranes and providing ideal and various models for the transport. Understanding the nature of carrier, the mobility of matrix and the physico-chemical properties of polymer composites are crucial for facilitated transport. Depending on the mobility of carrier, facilitated transport membrane is classified into three; mobile carrier membrane, semi-mobile carrier membrane, fixed-site carrier membrane. Also, there are four types of reversible reaction between the carrier and the specific target; proton transfer reaction, nucleophilic addition reaction, p-complexation reaction and electrochemical reaction. The facilitated transport membranes have been applied in the separation of CO2, O2 and olefin (propylene or ethylene). In this review, major challenges surrounding facilitated transport membranes and the strategies to tackle these challenges are given in detail.

Dissipation of Cyclosulfamuron in Rice Paddies (수도 재배환경 중 제초제 Cyclosulfamuron의 잔류특성)

  • Lee, Young-Deuk;Song, Sung-Do
    • Korean Journal of Environmental Agriculture
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    • v.20 no.4
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    • pp.269-276
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    • 2001
  • Several experiments including persistence, distribution, leaching, and terminal residue trials were carried out to investigate the behavior of cyclosulfamuron in rice paddies. Cyclosulfamuron was gradually dissipated in two different soils showing the first-order kinetics. Half-lives of the herbicide were calculated to be $17{\sim}30$ and $14{\sim}16$ days under field and laboratory conditions, respectively. In the paddy soil/water system, the residue tended to reside more in the soil phase as time elapsed. Cyclosulfamuron was less persistent in paddy water than in soil with half-lives of 10 and 19 days, respectively. No cyclosulfamuron was leached below 20 cm-deep soil during water percolation with 50 cm hydraulic head, while some downward mobility was observed within the soil column. When EC and SC formulations of cyclosulfamuron were applied to the paddy field at 120 or 150-day pre-harvest intervals, its terminal residues in hulled rice were all less than 0.01 mg/kg, irrespective of formulation type and application timing. In rice straw, however, some residues were found at $<0.02{\sim}0.05$ mg/kg as SC formulation was applied. Rapid dissipation, restricted mobility, and low terminal residues of cyclosulfamuron in rice paddies suggest that no significant residues would be transported or carried over to the non-target environment.

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Reliability-based Design Optimization on Mobility of Deep-seabed Test Miner Using Censored Data of Current Speed (중도절단 해류속도자료를 이용한 심해저 시험집광기의 주행성능에 관한 신뢰성 기반 최적설계)

  • Park, Sanghyun;Cho, Su-Gil;Lim, Woochul;Kim, Saekyeol;Choi, Sung Sik;Lee, Minuk;Choi, Jong-Su;Kim, Hyung-Woo;Lee, Chang-Ho;Hong, Sup;Lee, Tae Hee
    • Ocean and Polar Research
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    • v.36 no.4
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    • pp.487-494
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    • 2014
  • Deep-seabed test miner operated by a self-propelled mining system moving on soft soil is an essential device to secure floating and towing performances. The performances of the tracked vehicle are seriously influenced by noise factors such as the shear strength of the seafloor, bottom current, seafloor slope, speed of tracked vehicle, reaction forces of flexible hose, steering ratio, etc. Due to uncertainties related to noise factors, the design of a deep-sea manganese nodules test miner that satisfies target reliabilities is difficult. Therefore, reliability-based design optimization (RBDO) is required to guarantee system reliability under circumstances where uncertainties related to noise factors prevail. Among noise factors, the bottom current, a bimodal distribution, is censored due to the observation limit of measurement devices. Therefore, estimated distribution of the bottom current is inaccurate without considering these characteristics and the result of RBDO cannot be guaranteed. In this paper, we define censored data as unknown values over the limit of observation. If this data is estimated by using Akaike information criterion (AIC) that cannot consider the characteristics of censored data, the distribution of estimated data cannot guarantee accurate reliability. Therefore, censored AIC that can consider the characteristics of data is used to estimate accurate distribution of the bottom current. Finally, RBDO, under circumstances where uncertainties related to noise factors combined censored data are present, is performed on the mobility of a deep-sea manganese nodules test miner.

The properties of Al-doped ZnO films deposited with RF magnetron sputtering system in various H2/(Ar + H2) gas ratios (RF 마그네트론 스퍼터링 방법을 사용해 증착된 Al이 도핑 된 ZnO 박막의 H2/(Ar + H2) 가스 비율에 따른 특성)

  • Kim, Jwa-Yeon;Han, Jung-Su
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.3
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    • pp.122-126
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    • 2012
  • The properties of Al-doped ZnO (AZO) films were investigated as a function of $H_2/(Ar+H_2)$ gas ratio using an AZO (2 wt% $Al_2O_3$) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at $200^{\circ}C$ and in $2{\times}10^{-2}$ Torr working pressure and with various ratios of $H_2/(Ar+H_2)$ gas. During the AZO film deposition process, partial $H_2$ gas affected the AZO film characteristics. The electron resistivity (${\sim}9.21{\times}10^{-4}\;{\Omega}cm$) was lowest and mobility (${\sim}17.8\;cm^2/Vs$) was highest in AZO films when the $H_2/(Ar+H_2)$ gas ratio was 2.5 %. When the $H_2/(Ar+H_2)$ gas ratio was increased above 2.5 %, the electron resistivity increased and mobility decreased with increasing $H_2/(Ar+H_2)$ gas ratio in AZO films. The carrier concentration increased with increasing $H_2/(Ar+H_2)$ gas ratio from 0 % to 7.5 %. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90 % and an orientation of the deposition was [002] orientation for AZO films grown with all $H_2/(Ar+H_2)$ gas ratios.

Nonhomogeneity of the Electrical Properties with Deposition Position in an ITO Thin Film Deposited under a Given R.F. Magnetron Sputtering Condition (동일 증착 조건의 스퍼터링에 의해서 제작된 Indium Tin 산화물 박막의 증착위치에 따른 전기적 특성의 불균질성)

  • 유동주;최시경
    • Journal of the Korean Ceramic Society
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    • v.38 no.11
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    • pp.973-979
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    • 2001
  • Tin-doped indium oxide (ITO) thin films were deposited using r.f. magnetron reactive sputtering and the electrical properties, such as the resistivity, carrier concentration and mobility, were investigated as a function of the sample position under a given magnetron sputtering condition. The nonhomogeneity of the electrical properties with the sample position was observed under a given magnetron sputtering condition. The resistivity of ITO thin film on the substrate which corresponded to the center of the target had a minimum value, 2∼4$\times$10$\^$-4/$\Omega$$.$cm, and it increased symmetrically when the substrate deviated from the center. The density measurement result also showed that ITO thin film deposited at the center has a maximum density of 7.0g/cm$^3$, which was a relative density of about 97%, and the density decreased symmetrically as the substrate deviated from the center. The nonhomogeneity of electrical properties with the deposition position could be explained with the incidence angle of the source beam alpha, which is related with an atomic self-shadowing effect. It was confirmed experimentally that the density in film affect both the carrier mobility and the conductivity. In the case where the density of ITO thin film is 7.0g/cm$^3$, the magnitude of the mean free path was identical with that of the grain size(the diameter of column). However, in the other cases, the mean free path was smaller than the grain size. These results showed that the scattering of the free electrons at the grain boundary is the major factor for the electrical conduction in ITO thin films having a high density, and there exists other scattering sources such as vacancies, holes, or pores in ITO thin films having a low density.ing a low density.

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Synthesis of ITiO(Indium Titanium Oxide) particle by sol-gel and investigation on light transmittance of deposited ITiO thin film (졸-겔법에 의한 ITiO(Indium Titanium Oxide) 입자의 합성과 ITiO 박막의 광투과도 조사)

  • Go, Eun Ju;Kim, Sang Hern
    • Journal of the Korean Applied Science and Technology
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    • v.34 no.4
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    • pp.705-716
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    • 2017
  • In this study, Indium-Titanium hydroxide particle with 0.5, 1.0, 1.5 wt% of $TiO_2$ were synthesized by sol process and adding the base, ITiO(Indium Titanium Oxide) particles were obtained by gelling at $200^{\circ}C$ and $500^{\circ}C$. The ITiO particle's size with gel process at $200^{\circ}C$ was smaller than ITiO particle's size with gel process $500^{\circ}C$. The ITiO particle with gel process at $200^{\circ}C$ was used to fabricate dense ITiO target. ITiO targets with 0.5, 1.0, 1.5 wt% of $TiO_2$ were fabricated and used to obtain ITiO thin films onto glass by sputtering. Among those sputtered ITiOs' thin films, ITiO thin film with 0.4 % of $O_2$ and 0.5 wt% of $TiO_2$ showed the lowest specific resistance, highest charge mobility and lowest carrier concentration. It was found the light transmittance of the ITiO film were increased highly compared to light transmittance of ITO (Indium Tin Oxide) thin film over Infrared wavelength ranges.