• 한국진공학회지
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• 제12권1호
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• pp.40-45
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• 2003

양질의 $Ta_2O_5$ 박막을 양극산화법으로 제작 할 수 있음을 보였다. 양극산화 직후 이 비정질 박막의 두께가 750 $\AA$ 일 때 굴절율은 2.1~2.2, 유전율은 25 이상 그리고 1 MV$\textrm{cm}^{-1}$의 전기장에서 누설전류가 $10^{-8}$ /A$\textrm{cm}^{-2}$ 이하인 우수한 전기적 특성을 가지는 것을 확인할 수 있었다. 이 $Ta_2O_5$ 5/ 박막으로 MIM소자를 제작하였을 때, 완벽한 전류-전압 대칭성을 볼 수 있었다. 이러한 MIM소자는 새로운 방법의 양극산화법과 열처리 기법으로 만들 수 있는바 상위 전극의 종류와 열처리 조건에 따른 이 MIM소자의 특성에 관하여서 논의하였다.

• 한국초전도ㆍ저온공학회논문지
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• 제23권2호
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• pp.1-5
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• 2021

We have investigated the electrical transport properties of polycrystalline tantalum nitride (TaN_x) films. Various compositions of tantalum (nitride) thin films have been deposited on SiO₂ substrates by reactive DC magnetron sputtering while changing the ratio of nitrogen partial pressure. The substrate temperature was maintained at 283 K during deposition. X-ray diffraction analyses indicated the presence of α-Ta and β-Ta phases in the Ta film deposited in pure argon atmosphere, while fcc-TaN_x phases appeared in the sputtering gas mixture of argon and nitrogen. The N/Ta atomic ratio in the film increased ranging from 0.36 to 1.07 for nitrogen partial pressure from 7 to 20.7%. The superconducting transition temperatures of the TaN_x thin films were measured to be greater than 3.86 K with a maximum of 5.34 K. The electrical resistivity of TaN_x thin film was in the range of 177-577 𝜇Ωcm and increased with an increase in nitrogen content. The upper critical filed at zero temperature for a TaN_0.87 thin film was estimated to exceed 11.3 T, while it showed the lowest T_c = 3.86 K among the measured superconducting TaN_x thin films. We try to explain the behavior of the increase of the residual resistivity and the upper critical field for TaN_x thin films with the nitrogen content by using the combined role of the intergrain Coulomb effect and disorder effect by grain boundaries.

• 한국결정학회지
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• 제11권2호
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• pp.95-101
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• 2000

Ferroelectric SrBi2Ta2O9 (SBT) thin films of Pt/Ti/SiO2 electrode were fabricated using a sintered SBT target with various Bi2O3 content by rf magnetron sputtering. Good hysteresis loop characteristics were observed in the SBT thin films deposited with 50mol% excess Bi target. SBT thin films crystallized from 650℃ however, good hysteresis loop can be obtained in the film annealed above 700℃. pt/TiO2/SiO2 and Pt/SiO2 electrodes were also used to investigate the Pt electrode dependence of SBT thin films. SBT thin films showed random oriented polycrystalline structure and similar morphology regardless of electrodes with quite different surface morphology. A 0.2㎛ thick SBT film annealed at 750℃ exhibited the remanent polarization (2Pr) of μC/㎠ and coercive voltage(Vc) of 1V at an applied voltage of 5V.

• 한국가스학회지
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• 제2권4호
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• pp.34-41
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• 1998

순철과 스테인리스강 위에 $A1_2O_3,\;Ta_2O_5$ 및 $ZrO_2$의 산화물을 RF스파터링법으로 피복시켜, 피막과 모재와의 밀착성 평가, 피복강에 대한 부식거동 및 피막결함률에 대하여 고찰을 실시하였다. 미소경도시험에서 밀착성지수 $\chi$를 이용하여 산화물피막의 밀착성을 평가할 수 있었다. 임계부동화전류밀도법은 세라믹피복강재의 결함률을 평가하는데 유용한 수단임을 알 수 있었다.

• The Korean Journal of Ceramics
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• 제6권3호
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• pp.219-223
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• 2000

The ferroelectric SBT films were deposited on Pt/Ti/SiO$_2$/Si substrates by liquid injection metalorganic chemical vapor deposition (MOCVD) with single-mixture solution of Sr[Ta(OEt)$_5$(dmae)]$_2$and Bi(C$_6$ 6/H$_5$)$_3$. The Sr/Ta and Bi/Ta ratio in SBT films depended on deposition temperature and mol ratio of precursor in the single-mixture solution. At the substrate temperature of 40$0^{\circ}C$, Sr/Ta and Bi/Ta ratio were close to 0.4 and 1 at precursor mol ratio of 0.5~1.0, respectively. As-deposited film was amorphous. However, after annealing at 75$0^{\circ}C$ for 30 min in oxygen atmosphere, the diffraction patterns indicated polycrystalline SBT phase. The remanent polarization (Pr) and coercive field (Ec) of SBT film annealed at 75$0^{\circ}C$ were 4.7$\mu$C/$\textrm{cm}^2$ and 115.7kV/cm at an applied voltage of 5V, respectively. The SBT films annealed at 75$0^{\circ}C$ showed practically no polarization fatigue up to 10$^10$ switching cycles.

• 한국세라믹학회지
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• 제39권4호
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• pp.377-385
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• 2002

Metal-Ferroelectric-Insulator-Semiconductor(MFIS) 구조의 적용하기 위해 R. F. 마그네트론 스퍼터를 이용하여 p-type Si(111) 기판 위에 $ZrO_2$와 $SrBi_2Ta_2O_9$ 박막을 증착하였다. SBT 박막은 $ZrO_2$ 완충층을 삽입함으로써 MFIS 구조의 전기적인 특성이 향상되었다. $ZrO_2$ 박막의 두께를 고정하고 SBT 박막의 두께를 160nm에서 220nm으로 변화시키면서 윈도우 메모리를 3-9V의 범위에서 측정하였다. Pt/SBT(160nm)/$ZrO_2$(20nm)/Si의 조건에서 최대 2.2V 메모리 윈도우 값을 얻을 수 있었으며 이 메모리 윈도우 값은 실제 적용되는 저전압 NDRO-FRAM 구동에 충분한 값이다.

• 한국세라믹학회지
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• 제40권3호
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• pp.279-285
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• 2003

Sol-gel 법으로 200 nm 정도의 두께를 가진 강유전성 S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$ N $b_{0.2}$ 박막을 Pt/Ti $O_2$/ $SiO_2$/Si 기판 위에 증착하였다. 본 실험에서는 Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$ 그리고, Nb(O $C_2$ $H_{5}$)$_{5}$를 출발 물질로 사용하였으며 2-methoxyethanol을 용매로 사용하였다. UV 노광과 급속열처리가 SBTN 박막의 구조와 전기적 특성에 어떤 영향을 주는 가를 연구하였다. UV 노광과 급속열처리를 한 후에 $650^{\circ}C$ 열처리한 SBTN 박막의 3V와 5V 인가 전압하에서의 잔류분극 값은 각각 8.49와 11.94 $\mu$C/$ extrm{cm}^2$이었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.198-199
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• 2006

$SrTa_2O_6$(STA) thin films were fabricated by sol-gel method. The films annealed below $700^{\circ}C$, showed amorphous phase and crystallization phase was observed after annealing over $800^{\circ}C$. From high frequency capacitance-voltage measurements, 24nm thick STA thin film annealed at $900^{\circ}C$, has an EOT of 5.7nm and a dielectric constant of 16. Leakage current characteristics were improved by the insertion of chemical oxide between STA and Si. Leakage current densities are around $3.5{\times}10^{-7}A/cm^2$ at 5V for the structure inserted chemical oxide but $1.4{\times}10^{-6}A/cm^2$ at 5V without chemical oxide.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.24.1-24.1
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• 2009

Tantalum carbo-nitride($T_aC_xN_y$) films were deposited with chemical vapor deposition(CVD) using tert-butylimido tris-diethylamido tantalum (TBTDET, $^tBu-N=Ta-(NEt_2)_3$, $Et=C_2H_5$, $^tBu=C(CH_3)_3$) between $350^{\circ}C$ and $600^{\circ}C$ with argon as a carrier gas. Fourier transform infrared (FT-IR)spectroscopy was used to study the thermal decomposition behavior of TBTDET in the gas phase. When the temperature was increased, C-H and C-N bonding of TBTDET disappeared and the peaks of ethylene appeared above $450^{\circ}C$ in the gas phase. The growth rate and film density of $T_aC_xN_y$ film were in the range of 0.1nm/min to 1.30nm/min and of $8.92g/cm^3$ to $10.6g/cm^3$ depending on the deposition temperature. $T_aC_xN_y$ films deposited below $400^{\circ}C$ were amorphous and became polycrystal line above $500^{\circ}C$. It was confirmed that the $T_aC_xN_y$ film was a mixture of TaC, graphite, $Ta_3N_5$, TaN, and $Ta_2O_5$ phases and the oxide phase was formed from the post deposition oxygen uptake. With the increase of the deposition temperature, the TaN phase was increased over TaC and $Ta_3N_5$ and crystallinity, work function, conductivity and density of the film were increased. Also the oxygen uptake was decreased due to the increase of the film density. With the increase of the TaC phase in $T_aC_xN_y$ film, the work function was decreased to 4.25eV and with the increase of the TaN phase in $T_aC_xN_y$ film,it was increased to 4.48eV.

• 한국전기전자재료학회논문지
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• 제20권11호
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• pp.991-994
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• 2007

In this paper, we have designed the anti-reflection(AR) coating for $1400{\sim}1600$ nm wavelength range on the ferrule facet of optical connector. The low-temperature ion-assisted deposition was applied to AR coating on the ferrule facet in order to avoid damage of optical connector. We have measured the refractive index of coating film($Ta_2O_5\;and\;SiO_2$) using the ellipsometer and optimized the film thickness using the SEM and thickness measurement equipment. UV-VIS-NIR spectrophotometer is used to measure transmissivity of the AR coated ferrule facet. The refractive index of $Ta_2O_5\;and\;SiO_2$ is $2.123{\sim}2.125$ and $1.44{\sim}1.442$, respectively, for $1400{\sim}1600$ nm wavelength range. The transmissivity of the AR coated ferule facet is more than 99.8 % for $1425{\sim}1575$ nm wavelength range and more than 99.5 % for $1400{\sim}1600$ nm wavelength range. The return loss of the AR coated ferrule facet is 30.1 dB.