• 한국멀티미디어학회논문지
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• 제13권8호
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• pp.1115-1127
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• 2010

TFT-LCD 생산 과정에서 발생하는 결함을 정확하게 분류하여 결함 유형에 따라 폐기, 사용가능 등의 의사결정을 적절하게 내리는 것은 수율 증가 및 생산성 향상에 필수적인 요소이다. 본 논문에서는 TFT-LCD 생산 라인에서 획득한 결함 영상에 대하여 명암도 분포(intensity distribution) 및 결함 영상의 형태 특징(shape feature)을 분석하여 효과적으로 필름 결함 유형을 분류하는 기법을 제시한다. 본 연구에서는 먼저 필름 결함 영상을 결함 영역과 결함이 아닌 배경 영역으로 이진화하고, 결함 영역에서 결함의 선형성(linearity), 명암도 분포를 고려한 형태 특징 등의 여러 가지 특징을 분석하여 기준 영상(referential image) 데이터베이스를 구축하였으며, 분류하고자 하는 결함 영상과 데이터베이스에 저장된 기준 영상과의 매칭 비용 함수(matching cost function)를 정의하여 적절히 매칭시킴으로써 결함의 유형을 결정하였다. 제시한 기법의 성능을 검증하기 위하여 실제 TFT-LCD 생산 라인에서 획득한 결함 영상들을 대상으로 분류 실험을 수행하였으며, 실험 결과 생산 라인에서 이용할 수 있을 정도의 상당한 수준의 분류 정확도를 달성하였음을 보여주었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.295-296
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• 2005

Poly-Silicon Thin Film Transistor 응용을 위한 $SiO_2$ 박막 성장에 관한 연구로서 기존의 ICP-CVD를 이용한 실험에서 $SiH_4$ 가스대신 유기 사일렌 반응물질인 TEOS(TetraethylOrthosilicate) Source를 이용하여 APCVD 법으로 성장시켰다. $SiO_2$ 박막은 반도체 및 디스플레이 분야에서 필드산화막, 보호막, 게이트 절연막 등으로 사용되며, 이러한 산화막 증착을 TEOS를 이용하였고, 빠른 증착과 더 좋은 특성을 갖는 박막 형성을 위하여 $O_2$ 반응가스를 이용하였고, Ellipsometor, XPS 등을 이용하여 계면 특성 분석을 하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1479-1482
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• 2009

Compared with tilt transfer wet station, vertical etching system has a variety of advantages that are 50% space savings, higher throughput, fairly good etch uniformity over an entire glass for thin film transistor application. The aim of the present work is to study on a vertical etching system to improve the process factors. The computational fluid dynamics analysis is used to demonstrate the change of the etch uniformity as a function of tilt angle of the glass substrate.

• 산업공학
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• 제15권4호
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• pp.325-337
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• 2002

In this study we consider the problem of production planning of TFT-LCD(Thin Film Transistor - Liquid Crystal Display) production factory. Due to the complexities of the TFT-LCD production processes, it is difficult to schedule the production planning, and the study about automated scheduler is insufficient. In addition, the existing production method is a Push-System to raise the operation rate with expensive equipment, that has the problem to satisfy the due-date. This study presents an algorithm having a concept of Pull-System that satisfies the due-date and considers specialties of TFT-LCD production process. We make MPS(Master Production Schedule) according to the sales order, and present algorithms for scheduling about In/Out plan considering factory capacity, line balancing, material requirement, and inventory level of all Array, Cell, and Module processes. These algorithms are integrated as an automated production system, and we implement them in the actual TFT-LCD factory circumstance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.341.1-341.1
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• 2014

In the advanced material for the next generation display device, transparent amorphous oxide semiconductors (TAOS) are promising materials as a channel layer in thin film transistor (TFT). The TAOS have many advantages for large-area application compared with hydrogenated amorphous silicon TFT (a-Si:H) and organic semiconductor TFT. For the reasonable characteristics of TAOS, The a-IGZO has the excellent performances such as low temperature fabrication (R.T~), high mobility, visible region transparent, and reasonable on-off ratio. In this study, we investigated how the electric characteristics and physical properties are changed as various oxygen ratio when magnetron sputtering. we analysis a-IGZO film by AFM, EDS and I-V measurement. decreasing the oxygen ratio, the threshold voltage is shifted negatively and mobility is increasing. Through this correlation, we confirm the effect of oxygen ratio. We fabricated the bottom-gate a-IGZO TFTs. The gate insulator, SiO2 film was grown on heavily doped silicon wafer by thermal oxidation method. a-IGZO channel layer was deposited by RF magnetron sputtering. and the annealing condition is $350^{\circ}C$. Electrode were patterned Al deposition through a shadow mask(160/1000 um).

• Transactions on Electrical and Electronic Materials
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• 제18권5호
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• pp.250-252
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• 2017

High-performance full swing logic inverters were fabricated using amorphous 1 wt% Si doped indium-zinc-oxide (a-SIZO) thin films with different channel layer thicknesses. In the inverter configuration, the threshold voltage was adjusted by varying the thickness of the channel layer. The depletion mode (D-mode) device used a TFT with a channel layer thickness of 60 nm as it exhibited the most negative threshold voltage (-1.67 V). Inverters using enhancement mode (E-mode) devices were fabricated using TFTs with channel layer thicknesses of 20 or 40 nm with excellent subthreshold slope (S.S). Both the inverters exhibited high voltage gain values of 30.74 and 28.56, respectively at $V_{DD}=15V$. It was confirmed that the voltage gain can be improved by increasing the S.S value.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.845-848
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• 2007

Analysis of point defects invisible by a microscope has been studied on the a-Si thin film transistor panel. The point defects which were named Invisible Point Defect (IPD) is characterized by no particles or distortion of patterns on a pixel structure and randomly distributed on panels. To investigate the IPD, measurements were carried out: gray level driving, transistor transfer characteristic, focused ion beam (FIB), and secondary ion mass spectrometry (SIMS). The results showed that a contamination layer had a bad influence on an active surface. The contamination layer consisted of oxygen and iron from a water supply line during cleaning process. After the process tuning, IPD has been stabilized.

• 대한전기학회논문지
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• 제31권9호
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• pp.74-81
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• 1982

One of the stable thin film transistor fabricated by cadmium suifide with the anodized aluminium oxide as gate material. The principle of the operation for the device is based on the control mechanism of injected majority carricrs to the wide band gap semiconductor, that is cadmium sulfide, by means of the function of the gate control. The fabricated device constructed by evaporating CdS layer in the form of microcrystalline on the oxided thin film characterized by ea, 80 as voltage amplification factor, 1/100 mho as transconductance, 8 kohm as dynamic output resistance, furthermore gain band width products is about 15 MHz.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1475-1477
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• 1997

We have fabricated a novel LDD structured polysilicon thin film transistor with a simple fabrication process, compared with the conventional LDD poly-Si TFT, without LDD implantation by employing taper etched $SiO_2$ film instead of LDD implant mask. The leakage current of the novel LDD device is reduced significantly in OFF state while keeping the ON current to be almost identical to that of the non-LDD poly-Si TFTs.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.489-493
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• 2005

TFT-LCD(Thin Film Transistor Liquid Crystal Display) module is representative commercial product of FPD(Flat Panel Display). Thickness of TFT-LCD module is very thin. It is adopted for major display unit for IT devices such as Cellular Phone, Camcorder, Digital camera and etc. Due to the harsh user environment of mobile IT devices, it requires complicated structure and tight assembly. And user requirements for the mechanical functionalities of TFT-LCD module become more strict. However, TFT-LCD module is normally weak to high level transient mechanical shock. Since it uses thin crystallized panel. Therefore, anti-shock performance is classified as one of the most important design specifications. Traditionally, the product reliability against mechanical shock is confirmed by empirical method in the design-prototype-drop/impact testredesign paradigm. The method is time-consuming and expensive process. It lacks scientific insight and quantitative evaluation. In this article, a systematic design evaluation of TFT-LCD module for mobile IT devices is presented with combinations of FEA and testing to support the optimal shock proof display design procedure.