한국정보디스플레이학회:학술대회논문집
- 2007.08a
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- Pages.845-848
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- 2007
Study of point defects caused by a thin contamination layer in a-Si TFT-LCD
- Oh, Jae-Young (LG. Philips LCD R&D Center) ;
- Lee, Jae-Kyun (LG. Philips LCD R&D Center) ;
- Yang, Moung-Su (LG. Philips LCD R&D Center) ;
- Kang, In-Byeong (LG. Philips LCD R&D Center)
- Published : 2007.08.27
Abstract
Analysis of point defects invisible by a microscope has been studied on the a-Si thin film transistor panel. The point defects which were named Invisible Point Defect (IPD) is characterized by no particles or distortion of patterns on a pixel structure and randomly distributed on panels. To investigate the IPD, measurements were carried out: gray level driving, transistor transfer characteristic, focused ion beam (FIB), and secondary ion mass spectrometry (SIMS). The results showed that a contamination layer had a bad influence on an active surface. The contamination layer consisted of oxygen and iron from a water supply line during cleaning process. After the process tuning, IPD has been stabilized.