• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.110-116
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• 2004

We propose a novel sensing scheme, which operates by sensing the difference in voltage between a memory cell and a reference cell for a magneto-resistive random access memory (MRAM). A new midpoint-reference generation circuit is adopted for the reference cell to improve the sensing margin and to guarantee correct operation of sensing circuit for wide range of tunnel magneto resistance (TMR) voltages. In this scheme, the output voltage of the reference cell becomes nearly the midpoint between the cell voltages of high and low states even if the voltage across the magnetic tunnel junction (MTJ) varies.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2017년도 전력전자학술대회
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• pp.7-11
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• 2017

This paper describes a design concept of NPC1 power stack for 1500VDC megawatt level solar inverter. This stack uses three latest half-bridge IGBT modules with highest power density and operation junction temperature, which enable realization of power level beyond 1MW without paralleling. Critical design concept on loop inductance is explained. Dynamic characteristics are verified by double-pulse test. Thermal characteristics and output power limits are verified by thermal test. Temperature-sensitive component on PCB as output power constraint is identified. Different PCB repositioning solutions are tested to give the overall output power thermal derating curves, which enable output power of 1.15MW at $T_A=55^{\circ}C$ with $15^{\circ}C$ thermal margin. The power stack characteristic and performance change under different thermal environment is further analyzed.

• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.708-714
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• 1995

We have discussed the buried-channel(BC) behavior through the subthreshold characteristics of submicron PMOSFET device fabricated with twin well CMOS process. In this paper, we have guessed the initial conditions of ion implantation using process simulation, obtained the subthreshold characteristics as a function of process parameter variation such as threshold adjusting ion implant dose($D_c$), channel length(L), gate oxide thickness($T_ox$) and junction depth of source/drain($X_j$) using device simulation. The buried channel behavior with these process prarameter variation were showed apparent difference. Also, the fabricated pMOSFET device having different channel length represented good S.S value and low leakage current with increasing drain voltage.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1753-1755
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• 2003

MOF insulating cover used in 22.9 kV substation hasn't shown good performance in terms of electrical safety because of its defect by short clearance MOF cover and each input and output wire junction part. The MOF cover is easily moved by outside environment as wind or rain weather because of different size MOF cover and insulating busing, also can be leaded to breakdown by tracking. Therefore, we propose MOF cover which effectively prevents from electrical accidents in this paper. To decrease the electric field concentrated on specific part, we roundly design the shape of MOF cover and clearance between cover and live part was adjusted to be longer than before. The proposed MOF cover is evaluated by using the electric field solution program.

• Journal of Power Electronics
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• 제5권4호
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• pp.247-256
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• 2005

In order to harvest power in an efficient manner from a micro piezoelectric (PZT) device for charging the battery of a remote system, a new AC/DC resonant pulse power converter is proposed. The proposed power converter has two stages in the power conversion process. The first stage includes N-type MOSFET full bridge rectifier. The second stage includes a boost converter having an N-type MOSFET and a P-type MOSFET. MOSFETs work in the $1^{st}$ or $3^{rd}$ quadrant region. A small inductor for the boost converter is assigned in order to make the size of the power converter as small as possible, which makes the on-interval of the MOSFET switch of the boost converter ultimately short. Due to this short on-interval, the parasitic junction capacitances of MOSFETs affect the performance of the power converter system. In this paper, the performance of the new converter is analytically and experimentally evaluated with consideration of the parasitic capacitance of switching devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.252-254
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• 2003

A magnetic field sensor is fabricated with superconducting ceramics system. The sensor at liquid nitrogen temperature shows the increase in electrical resistance by applying magnetic field. Actually, the voltage drop across the sensor is changed from zero to a value more than $100{\mu}V$ by the applied magnetic field. The change in electrical resistance depends on magnetic field. The sensitivity of this sensor is 2.9 ohm/T. The increase in electrical resistance by the magnetic field is ascribed to a modification of the Josephson junctions due to the penetrating magnetic flux into the superconducting material.

• 한국진공학회지
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• 제4권S1호
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• pp.13-20
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• 1995

As으로 in-situ 도핑된 폴리실리콘 막을 원하는 부위에만 선택적으로 증착시킬 수 있는 RTP-CVD 증착기술이 성공적으로 수행되었다. 막의 증착속도는 도핑량이 증차함에 따라 점차 감소하였으나 As의 양이 5ppm보다 커지자 급격히 감소하였다. 또한 증착속도는 As의 유량이 일정할 때, SiH2CI2 유량에 따라 직선적으로 변화하였다. As 도펀트의 농도는 막내부에 비해 폴리실리콘/실리콘기판의 계면과 표면에서 상대적으로 높게 나타났으며, 특히 증착온도가 낮을 때 As 도펀트의 농도는 더 높아짐을 알 수 있었다. 실리콘 표면에서 약 40-50nm 위치에서 도펀트의 농도천이가 급격히 일어났으며, 그 결과 RTP-CVD공정을 이용할 때 극히 얕고 일정한 깊이분포를 갖는 n+-p junctions were achieved and laterally uniform delineated junctions were also observed using RTP-CVD.

• Progress in Superconductivity
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• 제5권1호
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• pp.1-4
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• 2003

A five-year project for Nb-based single flux quantum (SFQ) circuits supported by Japan's Ministry of Economy Trade and Industry (METI) in Japan was started in September 2002. Since April 2003, the New Energy and Industrial Technology Development Organization (NEDO) has supported this Superconductor Network Device Project. The aim of the project is to improve the integration level of Nb-based SFQ circuits to several ten thousand Josephson junctions, in comparison with their starting integration level of only a few thousand junctions. Actual targets are a 20 GHz dual processor module for the servers and a 0.96 Tbps switch module for the routers. Starting in April 2003, the Nb project was merged with SFQ circuit research using a high-T$_{c}$ superconductor (HTS). The HTS research targets are a wide-band AD converter for mobile-phone base stations and a sampling oscilloscope for wide-band waveform measurements.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2022년도 봄 학술논문 발표대회
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• pp.251-252
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• 2022

The microfluidic controlled droplet manufacturing system is one of the most powerful methods for capsule manufacturing. The microfluidic control method can control the type and size of the capsule by changing the size and configuration of the channel. In addition, by increasing the number of channels, capsules of uniform size can be mass-produced. In this paper, a capsule manufacturing system including flow-focusing and T junction method was designed. In addition, the effectiveness of this system was verified by manufacturing multi-emulsion capsules with a size of 2.2 to 3 mm.

• Genomics & Informatics
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• 제14권2호
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• pp.53-61
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• 2016

Toxoplasma gondii is an intracellular Apicomplexan parasite and a causative agent of toxoplasmosis in human. It causes encephalitis, uveitis, chorioretinitis, and congenital infection. T. gondii invades the host cell by forming a moving junction (MJ) complex. This complex formation is initiated by intermolecular interactions between the two secretory parasitic proteins-namely, apical membrane antigen 1 (AMA1) and rhoptry neck protein 2 (RON2) and is critically essential for the host invasion process. By this study, we propose two potential leads, NSC95522 and NSC179676 that can efficiently target the AMA1 hydrophobic cleft, which is a hotspot for targeting MJ complex formation. The proposed leads are the result of an exhaustive conformational search-based virtual screen with multilevel precision scoring of the docking affinities. These two compounds surpassed all the precision levels of docking and also the stringent post docking and cumulative molecular dynamics evaluations. Moreover, the backbone flexibility of hotspot residues in the hydrophobic cleft, which has been previously reported to be essential for accommodative binding of RON2 to AMA1, was also highly perturbed by these compounds. Furthermore, binding free energy calculations of these two compounds also revealed a significant affinity to AMA1. Machine learning approaches also predicted these two compounds to possess more relevant activities. Hence, these two leads, NSC95522 and NSC179676, may prove to be potential inhibitors targeting AMA1-RON2 complex formation towards combating toxoplasmosis.