• Composites Research
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• v.12 no.6
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• pp.53-64
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• 1999

Microstructural morphology and bending strengths of moulded composites of thermotropic liquid crystalline polymer(LCP) and polyamide 6 (PA6) have been studied as a function of epoxy fraction. Injection-moulding of a composite plaque at a temperature below the melting point of the LCP fibrils generated a multi-layered structure: the surface skin layer with thickness of $65\;-\;120{\mu\textrm{m}}$ exhibiting a transverse orientation; the sub-skin layer with an orientation in the flow direction; the core layer with arc-curved flow patterns. The plaques containing epoxy 4.8vol% exhibited superior bending strength and large fracture strain. With an increase of epoxy fraction equal to and beyond 4.8vol%, geometry of LCP domains was changed from fibrillar shape to lamella-like one, which caused a shear-mode fracture. An analysis of the bending strength of the composite plaques by using a symmetric layered model beam suggested that addition of epoxy component altered not only the microstructural geometry but also the elastic moduli and strengths of the respective layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.157-157
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• 2010

Vertical-structure light-emitting diodes (V-LEDs) by laser lift-off (LLO) have been exploited for high-efficiency GaN-based LEDs of solid-state lightings. In V-LEDs, emitted light from active regions is reflected-up from reflective ohmic contacts on p-GaN. Therefore, silver (Ag) is very suitable for reflective contacts due to its high reflectance (>95%) and surface plasmon coupling to visible light emissions. In addition, low contact resistivity has been obtained from Ag-based ohmic contacts annealed in oxygen ambient. However, annealing in oxygen ambient causes Ag to be oxidized and/or agglomerated, leading to degradation in both electrical and optical properties. Therefore, preventing Ag from oxidation and/or agglomeration is a key aspect for high-performance V-LEDs. In this work, we demonstrate the enhanced thermal stability of Ag-based Ohmic contact to p-GaN by reducing the thermal compressive stress. The thermal compressive stress due to the large difference in CTE between GaN ($5.6{\times}10^{-6}/^{\circ}C$) and Ag ($18.9{\times}10^{-6}/^{\circ}C$) accelerate the diffusion of Ag atoms, leading to Ag agglomeration. Therefore, by increasing the additional residual tensile stress in Ag film, the thermal compressive stress could be reduced, resulting in the enhancement of Ag agglomeration resistance. We employ the thin Ni layer in Ag film to form Ni/Ag mutli-layer structure, because the lattice constant of NiO ($4.176\;{\AA}$ is larger than that of Ag ($4.086\;{\AA}$). High-resolution symmetric and asymmetric X-ray diffraction was used to measure the in-plane strain of Ag films. Due to the expansion of lattice constant by oxidation of Ni into NiO layer, Ag layer in Ni/Ag multi-layer structure was tensilely strained after annealing. Based on experimental results, it could be concluded that the reduction of thermal compressive stress by additional tensile stress in Ag film plays a critical role to enhance the thermal stability of Ag-based Ohmic contact to p-GaN.

• Journal of Korea Multimedia Society
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• v.11 no.8
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• pp.1093-1100
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• 2008

Feistel and SPN are the two main structures in designing a block cipher algorithm. Unlike Feistel, an SPN has an asymmetric structure in encryption and decryption. In this paper we propose an SPN algorithm which has a symmetric structure in encryption and decryption. The whole operations in our SPN algorithm are composed of the even numbers of N rounds where the first half of them, 1 to N/2, applies function and the last half of them, (N+1)/2 to N, employs inverse function. Symmetry layer is executed to create a symmetry block in between function layer and inverse function layer. AES encryption and decryption algorithm, whose safety is already proved, are exploited for function and inverse function, respectively. In order to be secure enough against the byte or word unit-based attacks, 32bit rotation and simple logical operations are performed in symmetry layer. Due to the simplicity of the proposed encryption and decryption algorithm in hardware configuration, the proposed algorithm is believed to construct a safe and efficient cipher in Smart Card and RFID environments where electronic chips are built in.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.135-137
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• 2002

In the favor of adjusting microwave signal, Hairpin type Filter, which delay microwave signal enough to several nanosecond, is a key component. One of the main advantage in using Hairpin type Filter is a conveniency for equipping with Delay Module, and because of having a wide bandwidth, Hairpin type Filter can be designed to satisfy the most applications. In this work, we attempted to estimate the delay time in a superconductive hairpin type filter A software to synthesize even and odd order equiripple hairpin type filter has been developed. This software arbitrarily locate its transfer zeros making symmetric of asymmetric amplitude response and equalizing group delay. Borland C++ compiler has been used. The program was designed to run under MS-DOS, Window 98, Window 2000. The program optimizes the position of the transfer function zeros in order to fulfill the group delay specification masks. We designed and fabricated a hairpin type HTS 2-pole microstrip bandpass filter to operate at 5.8Ghz. The fabrication method was pulsed laser deposition and YBCO films were deposited on sapphire substrates with a Ce$O_{2}$ thin layer as a buffer layer. We also developed a new style hairpin type filter by using interdigitide inner-pole. Compared to the same size regular hairpin type filters, our filters had a lower center frequency.

• Transactions of Materials Processing
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• v.29 no.1
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• pp.27-36
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• 2020

The Goss texture component of {110}<001> is well known as one of the best texture components to improve the magnetic properties of electrical steel sheets. The small amount of the Goss texture component is obtained at the surface of the steel sheet by shear deformation due to friction between the steel sheet and the roll during conventional symmetric rolling. This study aims to identify a method to obtain high intensity of the Goss texture component not only at the surface but in the whole layer of the steel sheet by shear deformation of asymmetric rolling. Low carbon steel sheets, which have different initial texture, were asymmetrically rolled by about 50%, 70%, and 80%. The pole figures of the top, center, and bottom layers of the initial and asymmetrically rolled low carbon steel sheets were measured by an X-ray diffractometer. Based on the measured pole figures of these samples, the intensities of the main texture components were analyzed for the initial and asymmetrically rolled low carbon steel sheets. As a result, the initial low carbon steel sheet with the γ-fiber component showed a higher intensity of the Goss texture component in the whole layer than the steel sheet with other texture components after asymmetric rolling.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1264-1270
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• 2004

A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After making symmetric thyristor dies with a voltage rating of 1,600 V from 350 $\mu$m thickness of 60 $\Omega$ㆍcm NTD-Si wafer and 200 $\mu$m width of n-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7 MeV proton beam showed a superior trade-off relationship of $V_{TM}$ = 1.55 V and $t_{q}$ = 15 $\mu$s attributed to a very narrow layer of short carrier lifetime(～1 $\mu$s) in the middle of its n-base drift region. To explain the small increase of $V_{TM}$ , we will introduce the effect of carrier compensation at the low carrier lifetime region by the diffusion current.ffusion current.t.

• Journal of computational fluids engineering
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• v.4 no.2
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• pp.57-66
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• 1999

Numerical Analysis has been done for the supersonic off-design jet flow due to the pressure difference between the jet and the ambient fluid. The difference of pressure generates an oblique shock or an expansion wave at the nozzle exit. The waves reflect repeatedly on the center axis and the sonic surface in the shear layer. The pressure difference is resolved across these reflected waves. In this paper, the axi-symmetric Navier-Stokes equation has been used with the κ-ε turbulence model. The second order TVD scheme with flux limiters, based on the flux vector split with the smooth eigenvalue split, has been used to capture internal shocks and other discontinuities. Numerical calculations have been done to analyze the off-design jet flow due to the pressure difference. The variation of pressure along the flow axis is compared with an experimental result and other numerical result. The characteristics of the interaction between the shock cell and the turbulence mixing layer have been analyzed.

• Advances in Computational Design
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• v.3 no.3
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• pp.213-232
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• 2018

First time, an exact solution for free vibration of the Levy-type rectangular laminated plate is developed considering the most efficient Zig-Zag theory (ZIGT) and third order theory (TOT). The plate is subjected to hard simply supported boundary condition (Levy-type) along x axis. Using the equilibrium equations and the plate constitutive relations, a set of 12 m first order differential homogenous equations are obtained, containing displacements and stress resultant as primary variables. The natural frequencies of a single-layer isotropic, multi-layer composites and sandwich plates are tabulated for three values of length-to-thickness ratio (S) and five set of boundary conditions and further assessed by comparing with existing literature and recently developed 3D EKM (extended Kantorovich method) solution. It is found that for the symmetric composite plate, TOT produces better results than ZIGT. For antisymmetric and sandwich plates, ZIGT predicts the frequency for different boundary conditions within 3% error with respect to 3D elasticity solution while TOT gives 10% error. But, ZIGT gives better predictions than the TOT concerning the displacement and stress variables.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.503-504
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• 2006

This paper presents the design and fabrication of a LC voltage-controlled oscillator (VCO) using 1-poly 6-metal mixed signal CMOS process. To obtain the high-quality factor inductor in LC resonator, patterned-ground shields (PGS) is placed under the symmetric inductor to reduce the effect from image current of resistive Si substrate. Moreover, due to the incapability of using thick top metal layer of which the thickness is over $2{\mu}m$, as used in many RF CMOS process, the structure of dual-metal layer in which we make electrically short circuit between the top metal and the next metal below it by a great number of via materials along the metal traces is adopted. The circuit operated from 2.63 GHz to 3.09 GHz tuned by accumulation-mode MOS varactor. The corresponding tuning range was 460 MHz. The measured phase noise was -115 dBc/Hz @ 1MHz offset at 2.63 GHz carrier frequency and the current consumption and the corresponding power consumption were about 2.6 mA and 4.68 mW respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.271-275
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• 2004

A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After fabricating symmetric thyristor dies with a voltage rating of 1,600V from $350{\mu}m$ thickness of $60{\Omega}cm$ NTD-Si wafer and $200{\mu}m$ width of N-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7MeV proton beam showed a superior trade-off relationship of $V_{TM}=1.55V\;and\;t_q=15{\mu}s$ attributed to a very narrow layer of short carrier lifetime(${\sim}1{\mu}s$) in the middle of its N-base drift region. To explain the small increase of $V_{TM}$, we will introduce the effect of carrier compensation by the diffusion current at the low carrier lifetime region.