• Title/Summary/Keyword: Surface uniformity

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Influence of Dose on the Property of Cobalt Silicides in Source/Drain Area (소오스/드레인 영역의 도펀트 양의 증가에 따른 코발트실리사이드의 물성변화)

  • Cheong, Seong-Hwee;Song, Oh-Sung;Kim, Min-Sung
    • Korean Journal of Materials Research
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    • v.13 no.1
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    • pp.43-47
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    • 2003
  • As and BF$_2$dopants are implanted for the formation of source/drain with dose of 1${\times}$10$^{15}$ ions/$\textrm{cm}^2$∼5${\times}$10$^{15}$ ions/$\textrm{cm}^2$ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 $\mu\textrm{m}$ CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in $CoSi_2$$n^{+}$ and $CoSi_2$$p^{V}$ , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in $CoSi_2$$n^{+}$ and $CoSi_2$$p^{+}$ . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in $CoSi_2$$n^{+}$ , while little variation was observed in $CoSi_2$$p^{+}$ . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of $CoSi_2$$n^{+}$ / and $CoSi_2$/$p^{+}$, which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13$\mu\textrm{m}$ process.

An Analysis of Fashion Designs Based on the Laws of the Screen Equivalent of Impressionist Paintings (인상주의 회화의 화면등가의 법칙에 기반 한 패션디자인 연구)

  • Lee, Shin-Young
    • Fashion & Textile Research Journal
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    • v.15 no.4
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    • pp.514-522
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    • 2013
  • This study reviews the principles for the techniques of Impressionist paintings as well as analyzed contemporary fashion designs with a focus on a motif-building technique based on the laws of a screen equivalent as a visual formative approach. We provide design principles based on fashion design painting techniques. Previous research on the laws of the screen equivalent of Impressionist paintings were studied and a qualitative analysis was conducted on fashion design cases from 2011, 2012 S/S and F/W collections. The analysis resulted in the following outcomes. First, the development of new motifs were found directly correlated to the creativity of design if it was a motif-building design. Second, in the selected fashion design cases, cutting lines and details were covered by motifs and their shapes collapsed in regards to overall visual uniformity so that specific details were hard to identify. Third, clothing shapes are recognized the changing colors of motifs and not through construction pattern lines; therefore, the expressions of diverse visual forms were available without being disturbed by construction pattern lines. This is deemed equivalent to an Impressionist painting style that depicts shapes with colors instead of lines. Lastly, the cases covered in this study have created new visual aspects that replace the stereoscopic spatial depth of clothes with a 'sensuous surface'. The pleasures derived from the sensuous surface are deemed equivalent to the visual pleasures created by Impressionist paintings.

Construction Management Method for Asphalt Paving Using Ground Penetrating Radar and an Infrared Camera (지표투과레이더와 적외선카메라를 이용한 아스팔트 포장 시공 관리 방법)

  • Baek, Jongeun;Park, Hee Mun;Yoo, Pyung Jun;Im, Jae Kyu
    • International Journal of Highway Engineering
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    • v.17 no.6
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    • pp.1-9
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    • 2015
  • PURPOSES : The objective of this study is to propose a quality control and quality assurance method for use during asphalt pavement construction using non-destructive methods, such as ground penetrating radar (GPR) and an infrared (IR) camera. METHODS : A 1.0 GHz air-coupled GPR system was used to measure the thickness and in situ density of asphalt concrete overlay during the placement and compaction of the asphalt layer in two test construction sections. The in situ density of the asphalt layer was estimated based on the dielectric constant of the asphalt concrete, which was measured as the ratio of the amplitude of the surface reflection of the asphalt mat to that of a metal plate. In addition, an IR camera was used to monitor the surface temperature of the asphalt mat to ensure its uniformity, for both conventional asphalt concrete and fiber-reinforced asphalt (FRA) concrete. RESULTS : From the GPR test, the measured in situ air void of the asphalt concrete overlay gradually decreased from 12.6% at placement to 8.1% after five roller passes for conventional asphalt concrete, and from 10.7% to 5.9% for the FRA concrete. The thickness of the asphalt concrete overlay was reduced from 7.0 cm to 6.0 cm for the conventional material, and from 9.2 cm to 6.4 cm for the FRA concrete. From the IR camera measurements, the temperature differences in the asphalt mat ranged from $10^{\circ}C$ to $30^{\circ}C$ in the two test sections. CONCLUSIONS : During asphalt concrete construction, GPR and IR tests can be applicable for monitoring the changes in in situ density, thickness, and temperature differences of the overlay, which are the most important factors for quality control. For easier and more reliable quality control of asphalt overlay construction, it is better to use the thickness measurement from the GPR.

Dispersion polymerization of styrene and Methylmethacrylate using macromonomers as a reactive stabilizer

  • Jung, Hye-Jun;Lee, Kang-Seok;Choe, Soon-Ja
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.86-88
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    • 2006
  • The novel linear- (V-LUM) and cross-type macromonomers (C-VUM) of vinyl-terminated bifunctional polyurethane were synthesized and applied to the dispersion polymerization of styrene and MMA in ethanol. The existence of the vinyl terminal groups and the grafted macromonomer with styrene and PMMA was verified using 1H NMR and 13C NMR. Monodisperse polystyrene (PS) microspheres were successfully obtained above 15 wt % of macromonomer relative to styrene. The macromonomer can efficiently stabilize higher surface area of the particles compared to a conventional stabilizer, PVP. The grafting ratio of the PS calculated from 1H NMR linearly increased up to 0.048 with 20 wt % of the macromonomer and the high molecular weights (501,300 g/mol) of PS with increased glass transition and enhanced thermal stability were obtained. Furthermore, the stable and monodisperse PMMA microspheres having a weight-average diameter of $5.09{\mu}m$ and a good uniformity of 1.01 were obtained with 20 wt% L-VUM. The molecular weight increased, but the size of the PMMA particles decreased with the macromonomer concentration due to the increased stabilizing effect. The molecular weight of the PMMA was approximately two fold higher than that by a conventional PVP. The L-VUM acts as a reactive stabilizer, which gives polyurethane-grafted PS or PMMA with a high molecular weight. In addition, the XPS result showed that the C-PS (PS using the C-VUM) was anchored with a larger amount of PEG than that of the L-PS (PS using the L-VUM) on the particle surface. Thus, the reaction and stabilizing mechanism of the macromonomers for the formation of PS particles is proposed.

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Preparation of Transparent and Conducting $SnO_2$ Thin Films by RF Magnetron Sputtering Method (RF 마그네트론 스퍼터링법에 의한 투명 전도성 $SnO_2$박막의 제조)

  • 신성호;박광자;김현후
    • Journal of the Korean Vacuum Society
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    • v.5 no.2
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    • pp.139-146
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    • 1996
  • Transparent and conducting Sb-doped $SnO_2$ thin films were prepared by rf magnetron sputtering technology. But it showed a serious damage phenomenon on the surface of as-deposited films. In order to avoid a damage caused in the substrate center and location facing to target erosion, a ring plate of masking glass was installed at 1.5 cm above target surface. The uniformity and electrical characteristic of $SnO_2$ thin films were evaluated by the control of optimal conditions in the magnetron sputtering operation such as rf power, sputtering gas pressure, and substrate temperature. In the experimental results using the operating conditions, the optimum temperature, which produced uniform and damageless films, shifted with the change of gas pressure. The rate was about $100^{\circ}C$/5 mTorr at rf power of 50 W Similarly, the optimum temperature in compensation for an increase of rf power shifted down to a proper rate.

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Fabrication of Cu Flakes by Ball Milling of Sub-micrometer Spherical Cu Particles (서브 마이크론급 구형 동분말의 볼 밀링을 통한 플레이크 동분말의 제조)

  • Kim, Ji Hwan;Lee, Jong-Hyun
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.4
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    • pp.133-137
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    • 2014
  • As a preceding process for preparing several micrometer sized Ag-coated Cu flakes, ball milling of submicrometer-sized Cu particles synthesized through a wet chemical method was performed in order to convert the particles into flakes. To suppress oxidation and aggregation of the particles during ball milling, ethylene glycol and ethyl acetate were used as a medium and a surface modifying agent, respectively. Results obtained with different rotation speeds of a jar indicated that the rotation speed changes a rotating mode, and strikingly alters the final shapes and shape uniformity of Cu particles after milling. The diameter of zirconia ball was also confirmed. Although there was aggregates in the initial submicrometer-sized Cu particles, therefore, well-dispersed Cu flakes with a size of several micrometers were successfully prepared by ball milling through optimization of rotation speed, amount of ethyl acetate, and diameter of zirconia ball.

The study of silicon etching using the high density hollow cathode plasma system

  • Yoo, Jin-Soo;Lee, Jun-Hoi;Gangopadhyay, U.;Kim, Kyung-Hae;Yi, Jun-Sin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.1038-1041
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    • 2003
  • In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.

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Real-time Localization of An UGV based on Uniform Arc Length Sampling of A 360 Degree Range Sensor (전방향 거리 센서의 균일 원호길이 샘플링을 이용한 무인 이동차량의 실시간 위치 추정)

  • Park, Soon-Yong;Choi, Sung-In
    • Journal of the Institute of Electronics Engineers of Korea CI
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    • v.48 no.6
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    • pp.114-122
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    • 2011
  • We propose an automatic localization technique based on Uniform Arc Length Sampling (UALS) of 360 degree range sensor data. The proposed method samples 3D points from dense a point-cloud which is acquired by the sensor, registers the sampled points to a digital surface model(DSM) in real-time, and determines the location of an Unmanned Ground Vehicle(UGV). To reduce the sampling and registration time of a sequence of dense range data, 3D range points are sampled uniformly in terms of ground sample distance. Using the proposed method, we can reduce the number of 3D points while maintaining their uniformity over range data. We compare the registration speed and accuracy of the proposed method with a conventional sample method. Through several experiments by changing the number of sampling points, we analyze the speed and accuracy of the proposed method.

Development of Cu CMP process for Cu-to-Cu wafer stacking (Cu-to-Cu 웨이퍼 적층을 위한 Cu CMP 특성 분석)

  • Song, Inhyeop;Lee, Minjae;Kim, Sungdong;Kim, Sarah Eunkyung
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.4
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    • pp.81-85
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    • 2013
  • Wafer stacking technology becomes more important for the next generation IC technology. It requires new process development such as TSV, wafer bonding, and wafer thinning and also needs to resolve wafer warpage, power delivery, and thermo-mechanical reliability for high volume manufacturing. In this study, Cu CMP which is the key process for wafer bonding has been studied using Cu CMP and oxide CMP processes. Wafer samples were fabricated on 8" Si wafer using a damascene process. Cu dishing after Cu CMP and oxide CMP was $180{\AA}$ in average and the total height from wafer surface to bump surface was approximately $2000{\AA}$.

A Study on the Dosimetry of the Total Skin Electron Beam Therapy in Cutaneous T-Cell Lymphoma (피부 T 세포림프종의 전 피부 전자선 치료를 위한 dosimetry 연구)

  • 신교철;윤형근
    • Progress in Medical Physics
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    • v.7 no.2
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    • pp.57-65
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    • 1996
  • Total Skin Electron Beam Therapy (TSEBT) is one of the most effective treatment methods for superficially disseminated skin cancer or cutaneous T-cell lymphoma. We have treated a patient with cutaneous T-cell lymphoma. We have used Stanford technique using six dual field. The nominal energy of electron beam was 4MeV. SSD was 390cm and the gantry angles of dual fields were 76$^{\circ}$ and 104$^{\circ}$. The dose profiles of single field and dual fields were measured with films and a Farmer type ion chamber. The field uniformity was 10% over the patient's surface. During treatment, the patient was placed in six different positions for homogenous dose distribution over the body surface. The areas not directly exposed to the path of the electron beam (soles of feet, perineum and vertex of scalp) were boosted with 7MeV electron beam. During the treatment, lens, fingernails and toenails were shielded.

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