• Title/Summary/Keyword: Surface nucleation

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Surface Structure and X-ray Topography of $NdAl_3(BO_3)_4$ Single Crystals Grown from High Temperature Solution of $BaO-B_2O_3-Nd_2O_3-Al_2O_3$ System ($BaO-B_2O_3-Nd_2O_3-Al_2O_3$계 고온 용액으로부터 성장된 $NdAl_3(BO_3)_4$ 단결정의 표면구조와 X-선 Topography)

  • 정선태;강진기;김정환;정수진
    • Journal of the Korean Ceramic Society
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    • v.31 no.3
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    • pp.249-256
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    • 1994
  • By surface structure and X-ray topographic observation, growth mechanism of NAB single crystal grown by TSSG technique using a BaB4O7 flux was studied. Surface structure of grown crystals were investigated by optical microscope. Growth history and crystal defects included within grown crystal were investigated using X-ray topography. The {001} faces were grown by 2-D nucleation growth. As decreasing cooling rate, growth mechanism of {111} and {11} was changed from 2-D nucleation growth to the growth by screw dislocation. Only surface striations developed parallel to a-axis were observed on {010} faces. Growth sector of NAB crystals were divided into {001}, {111}, {010}, {021}, {11}. The inclusion which was usually trapped between {001} faces was investigated.

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A Study of Back Transformation of Spinel to Olivine at High Temperature (고온에서 스피넬의 올리빈으로 역상변이 연구)

  • Kim Young-Ho
    • Journal of the Mineralogical Society of Korea
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    • v.18 no.4 s.46
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    • pp.237-248
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    • 2005
  • Results from in-situ high temperature X-ray diffraction measurements show that $Mg_{2}SiO_{4}{-}$spinel converts back to olivine phase only when heated in vacuum, and that at some high temperature, the olivine phase grows with time at the expense of the spinel phase strongly suggesting a 'nucleation and growth' type transition. In order to obtain the activation energy of spinel-olivine back transformation, kinetics measurements were performed on $Mg_{2}SiO_{4}{-}$spinel in vacuum at high temperatures between 1023 and 1116 K. Activation energy was determined using 'time to a given fraction method'. By employing the Avrami equation, it was found that n values generally increase with increasing temperature in a wide range implying that the nucleation and growth mechanism is probably temperature-dependent. It is likely that in spinel, at a relatively lower transformation temperature, after nucleation sites saturated, the growth of the new phase starts on the surface and gradually moves inwards. At high temperatures, however, after nucleation sites saturated, the growth starts both on the surface as well as at the interior.

Nucleation Enhancing Effect of Different ECR Plasmas Pretreatment in the RUO2 Film Growth by MOCVD (ECR플라즈마 전처리가 RuO2 MOCVD시 핵생성에 끼치는 효과)

  • Eom, Taejong;Park, Yunkyu;Lee, Chongmu
    • Journal of the Korean Ceramic Society
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    • v.42 no.2 s.273
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    • pp.94-98
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    • 2005
  • $RuO_2$ is widely studied as a lower electrode material for high dielectric capacitors in DRAM (Dynamic Random Access Memories) and FRAM (Ferroelectric Random Access Memories). In this study, the effects of hydrogen, oxygen, and argon Electron Cyclotron Resonance (ECR) plasma pretreatments on deposited by Metal Organic Chemical Vapor Deposition (MOCVD) $RuO_2$ nucleation was investigated using X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM) analyses. Argon ECR plasma pretreatment was found to offer the highest $RuO_2$ nucleation density among these three pretreatments. The mechanism through which $RuO_2$ nucleation is enhanced by ECR plasma pretreatment may be that the argon or the hydrogen ECR plasma removes nitrogen and oxygen atoms at the TiN film surface so that the underlying TiN film surface is changed to Ti-rich TiN.

Effects of various Pretreatments on the Nucleation of CVD Tungsten (전처리가 CVD 텅스텐의 핵 생성에 미치는 영향)

  • Kim, Eui-Song;Lee, Chong-Mu;Lee, Jong-Gil
    • Korean Journal of Materials Research
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    • v.2 no.6
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    • pp.443-451
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    • 1992
  • Effects of various pretreatments on the nucleation of CVD-W deposited on the reactively sputter-deposited TiN was investigated. Incubation period of nucleation and deposition rate decreased by the pretreatment of Ar rf-sputter etching for the depth below 300k, but they increased for the etchig depth over 200A. The preteatment of Ar ion implantation decreased the incubation period of nucleation, but increased deposition rate. Also Si$H_4$flushing pretreatment decreased the incubation period of nucleation slightly due to the absorption of Si by TiN surface.

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The Effect of Fretting Wear on Fatigue Crack Initiation Site of Press-fitted Shaft (압입축에 발생하는 프레팅 마모가 피로균열 발생 위치에 미치는 영향)

  • Lee, Dong-Hyong;Kwon, Seok-Jin;Choi, Jae-Boong;Kim, Young-Jin
    • Journal of the Korean Society for Railway
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    • v.10 no.5
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    • pp.546-553
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    • 2007
  • The objective of the present paper is to evaluate the effect of the evolution of contact surface profile by fretting wear on the contact stress distribution and fatigue crack initiation site of press-fitted shaft by means of an analytical method based on experimental data. A finite element analysis was performed to analyze the stress states of press-fitted shaft, considering the worn contact surface profiles of shaft. The evolutions of contact stress as wearing of contact surface were analyzed by finite element analysis and fatigue crack nucleation sites were evaluated by fretting fatigue damage parameter (FFDP) md multiaxial fatigue criteria. It is found that the stress concentration of a contact edge in press-fitted sha손 decreases rapidly at the initial stage of total fatigue life, and its location shifts from the contact edge to the inside due to fretting wear as increasing of fatigue cycles. Thus the transition of crack nucleation position in press-fitted shaft is mainly caused by stress change of a contact edge due to the evolution of contact surface profile by fretting wear. Therefore, it is suggested that the nucleation of multiple cracks on fretted surface of press fits is strongly related to the evolution of surface profile at the initial stage of total fatigue life.

Nucleation and Growth Mechanism of Sticking Phenomenon in Ferritic Stainless Steel (페라이트계 스테인레스강의 STICKING 발생 및 성장기구)

  • Jin, W.;Choi, J.Y.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 1999.08a
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    • pp.373-382
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    • 1999
  • Nucleation and growth process of sticking particle in ferritic stainless steels was investigated using a two disk type hot rolling simulator. The sticking behavior was strongly dependent on the surface roughness of a high speed steel roll(HSS) and the oxidation resistance of the ferritic stainless steels. A hot rolling condition with the lower oxidation resistance of the stainless steel and the higher surface roughness of HSS roll was more sensitive to sticking occurrence. It was also illucidated that the initial sticking particles were nucleated at the scratches formed on the roll surface and were served as the sticking growth sites. As rolling proceeded, the sticking particles grew sites. As rolling proceeded, the sticking particles grew by the process that the previous sticking particles provided the sticking growth sites.

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The Synthesis of Diamond/WC-Co Thin Film by HE-CVD (HE-CVD법에 의한 Diamond/WC-Co 박막합성)

  • Lee, Kee-Sun;Seo, Sung-Man;Shin, Dong-Uk;Kim, Dong-Sun
    • Proceedings of the Korean Institute of Resources Recycling Conference
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    • 2003.10a
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    • pp.185-189
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    • 2003
  • The effect of surface roughness of the substrate on HF-CVD diamond coating was researched. The surface roughness was changed variously by electro-chemical etching conditions. The etching process acted to remove the metallic cobalt from the WC-Co. Diamond nucleation density was higher in etched the substrate. Therefore, the etching process was effective in both Co-removal and higher surface roughness, leading to the improving the diamond nucleation and deposition.

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A New Mechanish of Bright Plating on the Ground of Analysis of Rate Nucleafion and Growth (결정의 발생속도식과 송장속도식의 해석에 지초한 광택니켈도금의 새로운 메카니즘)

  • 박병각;송재설;김창진
    • Journal of the Korean institute of surface engineering
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    • v.21 no.2
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    • pp.76-82
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    • 1988
  • The bright nickel electroplatings were carried out the Watt bath containg a solobel saccharin as class I brightner and para substituted benzaldehydes as class II one. Extended Huckel MO calculation was done and polarization was measured to examine between $\pi$-electron density and the brightness. The correlation is also investigated between $\pi$-electron density of oxygen atom of aldehyde group and slope of polarization curve. As a result of the analysis of rate equation of nucleation, the surface energy of the deposited particle was obtained from the slope of the plot of $\ell$nI against 1/η2, and also the reat equation of nucleation found to influnced on the leveling on the basis of adsorption theory. We have proposed the general electroplating mechanism that is applied other to all other electroplating but nickel one. The above elucidated mechanism can be extended can be extended to the all electroplating other than bright nickel electroplating.

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A Study on the Characteristics of Nanodiamond Films with the Gas Flow Control (가스 유량제어에 의한 나노다이아몬드 박막의 특성연구)

  • Kim, Tae-Gyu;Kim, Chang-Hoon
    • Journal of the Korean institute of surface engineering
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    • v.39 no.4
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    • pp.153-159
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    • 2006
  • Nanodiamond films were deposited on Si substrate by introducing a time dependent on/off modulation of $CH_4\;and\;O_2$ flows in a vertical-type microwave plasma enhanced chemical vapor deposition system. Surface morphology and diamond quality of the film were investigated as a function of the on/off modulation time interval. The diamond nucleation density on the substrate was enhanced under low temperature and low pressure condition. In addition, the diamond nucleation density was enhanced by increasing the on/off modulation time interval. Enhanced diamond quality was noticeable under the condition of a longer on/off modulation time interval. It was suggested that the nanodiamond nuclei formed the cluster formation.

Nano Mechanics Analysis of Dislocation Nucleation and Interaction (전위의 생성 및 상호작용에 관한 나노 역학 해석)

  • Lee, Young-Min;Kim, Sung-Youb;Jun, Suk-Ky;Im, Se-Young
    • Proceedings of the KSME Conference
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    • 2004.04a
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    • pp.537-541
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    • 2004
  • Molecular dynamics simulation of nanolithography by AFM is conducted to study nucleation of various defects, and their subsequent development and interactions as well. During nanolithography via AFM, dislocation loops are emitted along the top surface, and resourceful defect interactions such as, formation of voids chain via the motion of a jog, and creations of extended nodes and Lomer-Cottrell Lock are observed.

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