• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.172-173
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• 2006

Metal-ferroelectric-insulator-semiconductor (MFIS) structures with $Bi_{3.35}La_{0.75}Ti_3O_{12}$ (BLT) ferroelectric film and Zirconium oxide ($ZrO_2$) layer were fabricated on p-type Si(100). $ZrO_2$ and BLT films were prepared by sol-gel technique. Surface morphologies of $ZrO_2$ and BLT film were measured by atomic force microscope (AFM). The electrical characteristics of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si film were investigated by C-V and I-V measurements. No hysteretic characteristics was observed in the C-V curve of the Au/$ZrO_2$/Si structure. The memory window width m C-V curve of the Au/BLT/$ZrO_2$/Si diode was about 1.3 V for a voltage sweep of ${\pm}5$ V. The leakage current of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si structures were about $3{\times}10^{-8}$ A at 30 MV/cm and $3{\times}10^{-8}$ A at 3 MV/cm, respectively.

• 한국산학기술학회논문지
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• 제19권4호
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• pp.138-142
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• 2018

본 연구에서는 플랜트 기자재 중 수충격에 매우 취약한 신축관 이음을 대상으로 수충격 발생 시 신축관 이음의 신축량의 변화를 현장에서 취득한 후 HIL 시뮬레이터의 작동데이터로 적용한 HILS 기법을 적용한 진동내구 시험을 수행하였다. 또한 진동내구 시험 시 내구수명의 주요 스트레스 인자로 신축관 내부압력을 가정하였다. 진동내구 시험은 신축관 내부 설정압 따라 진행되었으며 수명데이터를 이용, 수명데이터를 잘 따르는 곡선을 접합하여 수명예측 모델식을 유도하였고 특정 내부 설정압에서의 시험 및 수명결과를 통하여 이를 검증하였다. 한편, 시험 중 발생 된 신축관의 고장모드는 모두 벨로우즈 부 표면에 발생된 크랙과 크랙을 통한 누수 등이 있었다. 본 연구에서 유도한 수명에측 모델식은 설정압력을 스트레스 인자로 따르는 전형적인 역승모형이며 특정환경에서만 적용될 수 있는 한계를 지니고 있다. 이에 본 연구는 진동내구 수명의 가속요인인 압력 외 온도상태 등을 다양한 수명변수가 적용 가능한 복합수명예측 모델식을 개발할 예정이다.

• 한국재료학회지
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• 제18권7호
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• pp.373-378
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• 2008

$Ba(Ti,Sn)O_3$ thin films, for use as dielectrics for MLCCs, were grown from Sn doped BaTiO3 sources by e-beam evaporation. The crystalline phase, microstructure, dielectric and electrical properties of films were investigated as a function of the (Ti＋Sn)/Ba ratio. When $BaTiO_3$ sources doped with $20{\sim}50\;mol%$ of Sn were evaporated, $BaSnO_3$films were grown due to the higher vapor pressure of Ba and Sn than of Ti. However, it was possible to grow the $Ba(Ti,Sn)O_3$ thin films with {\leq}\;15\;mol%$ of Sn by co-evaporation of BTS and Ti metal sources. The (Ti＋Sn)/Ba and Sn/Ti ratio affected the microstructure and surface roughness of films and the dielectric constant increased with increasing Sn content. The dielectric constant and dissipation factor of $Ba(Ti,Sn)O_3$ thin films with {\leq}\;15\;mol%$ of Sn showed the range of 120 to 160 and $2.5{\sim}5.5%$ at 1 KHz, respectively. The leakage current density of films was order of the $10^{-9}{\sim}10^{-8}A/cm^2$ at 300 KV/cm. The research results showed that it was feasible to grow the $Ba(Ti,Sn)O_3$ thin films as dielectrics for MLCCs by an e-beam evaporation technique.

• ETRI Journal
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• 제26권4호
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• pp.315-320
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• 2004

This paper proposes a 10-${\mu}m$ thick oxide layer structure that can be used as a substrate for RF circuits. The structure has been fabricated using an anodic reaction and complex oxidation, which is a combined process of low-temperature thermal oxidation (500 $^{\circ}C$ for 1 hr at $H_2O/O_2$) and a rapid thermal oxidation (RTO) process (1050 ${\circ}C$, for 1 min). The electrical characteristics of the oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current density through the OPSL of 10 ${\mu}m$ was about 10 to 50 $nA/cm^2$ in the range of 0 to 50 V. The average value of the breakdown field was about 3.9 MV/cm. From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL prepared by a complex process were confirmed to be completely oxidized. The role of the RTO process was also important for the densification of the porous silicon layer (PSL) oxidized at a lower temperature. The measured working frequency of the coplanar waveguide (CPW) type short stub on an OPSL prepared by the complex oxidation process was 27.5 GHz, and the return loss was 4.2 dB, similar to that of the CPW-type short stub on an OPSL prepared at a temperature of 1050 $^{\circ}C$ (1 hr at $H_2O/O_2$). Also, the measured working frequency of the CPW-type open stub on an OPSL prepared by the complex oxidation process was 30.5 GHz, and the return was 15 dB at midband, similar to that of the CPW-type open stub on an OPSL prepared at a temperature of $1050^{\circ}C$ (1 hr at $H_2O/O_2$).

• 한국결정성장학회지
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• 제8권2호
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• pp.286-291
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• 1998

$RuO_2$를 하부 전극으로 적용하여 스퍼터링 가스의 주입비($Ar/O_2$ratio) 변화에 따른 $SrTiO_3$ 박막의 물성을 고찰하였다. 플라스마 가스내 $Ar/O_2$비 변화가 결정성, 표면 morphology등의 $SrTiO_3$ 박막의 미세구조에 큰 영향을 미치는 것을 확인할 수 있었다. 플라스마 가스내의 산소량이 증가함에 따라 박막의 표면 morpholgy 및 상형성의 향상을 통하여 $SrTiO_3$박막의 전기적 특성을 개선할 수 있음을 관찰하였다. 산소의 양이 증가할수록 ST 박막의 누설전류는 $2.0{\times}10^{-6}A/{\textrm}{cm}^2(Ar/O_2=10/0)$에서 $3.8{\times}10^{-7}A/{\textrm}cm^2(Ar/O_2=5/5)$로 감소하였고, 유전 상수값은 $70(Ar/O_2=10/0)$에서 $190(Ar/O_2=5/5)$으로 증가하였다.

• 한국컴퓨터정보학회논문지
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• 제19권7호
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• pp.95-102
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• 2014

지표면 아래에는 다양한 구조물들이 매설되어 있으며, 특히 도시가스 배관이나 전기 배선과 같이 문제가 발생할 경우 우리의 안전을 크게 위협할 수 있는 다양한 위험요소들이 존재하고있다. 따라서 다양한 오염물질과 접하게 되는 지하 구조물들은 부식에 대단히 민감하기 때문에 부식의 진행 정도를 정확히 파악하지 못하는 경우 가스 배관의 누설과 같은 대형 사고로 이어질 수 있다. 지금까지는 사람이 직접 지하구조물에 일일이 방문하여 수작업으로 측정하고 기록하는 방식이 주로 사용되었으나, 이 방식은 많은 인적/물적 자원이 요구되어 관리의 연속성이 떨어지게 된다. 따라서 지속적인 관리를 통해 위험요소를 신속하게 발견하기 위한 연구가 필요하며, 본 연구에서는구조물 관리 시스템에 ICT를 결합하여 이동 중인 차량에서 지하구조물에 대한 상태 정보를 무선으로 수집하고 분석하여 신속히 대비할 수 있는 시스템을 제안한다.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2008년도 춘계 학술발표회 초청강연 및 논문집
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• pp.938-946
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• 2008

This study is on sealing leakage holes where are in landfills to make clay cakes with clay particles, which have a negative surface charge using the method of electrophoresis. Generally, electrophoresis is the motion of charged particles in a colloid under the influence of an electric field; particles with a positive charge go to the cathode and negative to the anode. In this study in order to develop the prevention system of leakages of the leachate in landfills, one-dimensional electrophoresis tests were conducted for determining the properties of the motion of the electrophoresis and cutoff using the method of electrophoresis depending on various the effect factors such as types of clays, concentrations of the clays, and applied electric field. In case of the experiments of determining the optimum clays, Na and Ca-Bentonite, Na and Ca-Montmorillonite, which have greater zeta-potential, cation, exchange capacity as well as ability of cutoff, and Micro-cement inducing cementation were chosen and then the effect of those clays was investigated. Moreover, the properties of the motion and settling of the clays were investigated following electric field varied from 0 to 1V/cm at different concentration of the clays in order to determine both the properties of the motion of the clays and the efficiency of electric field when applying different direct current. Ultimately, the ability of cutoff was examined through measuring the permeability of the clay cakes derived from the one-dimensional electrophoresis tests.

• The Korean Journal of Ceramics
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• 제3권4호
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• pp.274-278
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• 1997

(Ba, Sr) TiO$_3$(BST) thin films were prepared on RuO$_2$/Si substrates by rf magnetron sputtering and annealing was followed at temperatures ranging from 550 to 80$0^{\circ}C$ in $N_2$or $O_2$atmosphere. The effects of annealing conditions on the properties of BST film deposited on RuO$_2$bottom electrodes were investigated. It was found that the crystallinity. surface roughness, and grain size of BST films vary with the annealing temperature but they are not dependent upon the annealing atmosphere. The flat region in the current-voltage (I-V) curves of BST capacitors shortened with increasing annealing temperature under both atmospheres. This is believed to be due to the lowering of potential barrier caused by unstable interface and the increase of charge The shortening of the flat region by $O_2$annealing was more severe than that by $N_2$-annealing. As a result, there was no flat region when the films were annealed at 700 and 80$0^{\circ}C$ in $O_2$atmosphere. The dielectric properties of BST films were improved by annealing in either atmosphere. however, a degradation with frequency was observed when the films were annealed at relatively high temperature under $O_2$atmosphere.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2005년도 춘계 학술발표회 논문집
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• pp.392-399
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• 2005

Shear modulus (or rigidity) of dam material is an important parameter which can be directly associated with the deformation of dam. Seepage or leakage of water can cause the defects or cracks of dam body. The existence of cracks and rigidity of dam body are decisive information for the estimation of dam safety. Rigidity of material is mainly determined from S-wave velocity and the defects of dam body can be detected by seismic reflection survey. Therefore, seismic reflection survey will be a desirable method which can give a solution about dam safety problem. Among various physical properties of dam body, S-wave velocity is the most important information but it is not easy to get the information. In this study, diverse measuring techniques of S-wave reflection survey were attempted to get the information about S-wave velocity of dam body. Ultimately, S-wave velocity could be estimated by the analysis of SH reflection events which can be easily observed in shot gather data obtained from SH measuring technique. Meanwhile, P-wave reflection survey was also performed at the same profile. P-beam radiation technique which can reduce the surface waves and reinforce the P-wave reflection events was applied for giving a help to analyse P-wave velocity. In the end, P-and S-wave velocity, Vs/Vp, Poisson's ratio distribution of the vertical section under the profile could be acquired.

• 한국전기전자재료학회논문지
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• 제22권4호
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• pp.290-296
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• 2009

$Bi_{4}Ti_{3}O_{12}$ (BiT) thin films were grown on the Pt/Ti/$SiO_2$/si substrate using a metal organic decomposition (MOD) method. Effects of oxygen annealing on the structural properties and dielectric properties of the BiT thin films were investigated. The BiT films were well developed when rapid thermal annealed at $>500^{\circ}C$ in oxygen ambient. For the film annealed at $700^{\circ}C$, no crystalline phase was observed under oxygen free annealing atmosphere while its crystallinity was significantly enhanced as the oxygen pressure increased. The BiT film also exhibited a smooth surface with defect free grains. A high dielectric constant and a low dielectric loss were achieved satisfactory in the frequency range from 75 kHz to 1 MHz. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current was also considerably improved, being as $0.62\;nA/cm^2$ at 1 V. Therefore, it is considered that the oxygen annealing has effects on an enhancement of crystallinity and dielectric properties of the BiT films.