Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effects of Oxygen Annealing on the Structural Properties and Dielectric Properties Of Bi4Ti3O12 Thin Films

Bi4Ti3O12 박막의 구조적 특성과 유전 특성에 미치는 산소 열처리 효과

  • 차유정 (요업기술원 전자부품팀) ;
  • 성태근 (고려대학교 나노반도체공학과) ;
  • 남산 (고려대학교 신소재공학과) ;
  • 정영훈 (요업기술원 전자부품팀) ;
  • 이영진 (요업기술원 전자부품팀) ;
  • 백종후 (요업기술원 전자부품팀)
  • Published : 2009.04.01
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Abstract

$Bi_{4}Ti_{3}O_{12}$ (BiT) thin films were grown on the Pt/Ti/$SiO_2$/si substrate using a metal organic decomposition (MOD) method. Effects of oxygen annealing on the structural properties and dielectric properties of the BiT thin films were investigated. The BiT films were well developed when rapid thermal annealed at $>500^{\circ}C$ in oxygen ambient. For the film annealed at $700^{\circ}C$, no crystalline phase was observed under oxygen free annealing atmosphere while its crystallinity was significantly enhanced as the oxygen pressure increased. The BiT film also exhibited a smooth surface with defect free grains. A high dielectric constant and a low dielectric loss were achieved satisfactory in the frequency range from 75 kHz to 1 MHz. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current was also considerably improved, being as $0.62\;nA/cm^2$ at 1 V. Therefore, it is considered that the oxygen annealing has effects on an enhancement of crystallinity and dielectric properties of the BiT films.

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References

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