• 대한토목학회논문집
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• 제37권5호
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• pp.787-799
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• 2017

저수지 제체 내 수로 구조물과 흙 접촉면의 장기적인 누수가 제체 파괴의 주원인 중의 하나 임에도 불구하고 이에 대한 연구는 미미한 실정이다. 배수통관과 같은 구조물이 부분 파손되어 누수가 발생하는 경우 외형적으로 관측하기 곤란하고 파이핑 등에 의한 제체 손상 우려가 있어 이에 대한 연구가 필요하다. 본 연구는 저수지 제체를 관통하는 배수 통관이 부등침하 등으로 인해 통관 일부가 파손되어 누수가 발생하는 경우 저수지의 제체 형태를 코어형 단면과 균일형 단면으로 구분하여 수위변화에 따른 2차원 침투해석을 수행하였다. 연구결과 저수지 등의 제체를 관통하는 배수 통관으로의 누수가 발생 할 경우 통관 하부보다는 상부가 파손되어 누수가 되는 경우가 파이핑 발생 가능성이 크며, 특히 제체 하류측에서 누수가 발생하는 경우 제체 중심 코어부의 존재는 제체 안정 유지에 도움을 주고 있다고 판단된다. 또한 저수지 제체 내부 간극수압의 급격한 감소가 관측되면 파이핑 발생 우려에 대한 심도 있는 고려가 필요할 것으로 사료된다.

• 한국건설순환자원학회논문집
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• 제4권4호
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• pp.379-387
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• 2016

본 연구에서는 지하부위의 누수 예방 기술 정책 수립을 위한 방수 성능 분석 연구에 대하여 설문조사를 실시하고 이를 분석하였다. 설문 분석 결과, 현재 공동주택 지하공간에 대한 누수는 심각하며, 응답자 대부분도 이를 심각하게 인식하고 있다. 환경을 고려하지 않은 누수설계 및 누수예방 설계의 부재, 환경에 적합하지 않은 시공 시스템의 활용이 누수문제의 주요 원인이라 판단되었으며, 이를 개선하기 위하여 지하부위 외방수공법의 도입을 의무화하고, 설계시 공동주택 지하부위에 적용할 수 있는 표준 방수 기술 및 공법을 수립해야 될 것이며, 지하 시공환경을 고려한 방수 시공방법의 개발의 필요성이 강조되었다. 따라서 상기의 상황을 미루어 볼 때 법-제도에 의해 명시된 방수설계, 재료 및 공법, 유지관리 등을 방수시공의 전반적인 상황 컨트롤할 수 있는 가이드라인의 제시는 필수요소로 부각되었다.

• 한국전기전자재료학회논문지
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• 제37권2호
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• pp.208-214
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• 2024

This reports the electrical properties of single-crystal β-gallium oxide (β-Ga₂O₃) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al₂O₃ passivation layer (film guard ring: FGR) and the other is with vias formed in the Al₂O₃ passivation layer to allow the metal to contact the Ga₂O₃ surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (R_on,sp) is 5.9 mΩ·cm² and 29 mΩ·cm². The series resistance (R_s) in the nonlinear section extracted using Cheung's formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al₂O₃ was widely deposited on the Ga₂O₃ surface, which prevent leakage current on the Ga₂O₃ surface.

• 태양에너지
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• 제8권2호
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• pp.12-18
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• 1988

The effect of surface recombination current density on the saturation current density in Si solar cell has been studied. Theoretical model for surface recombination current was set up from emitter transparent model of M.A. Shibib, and saturation current of Si solar cell made by ion implantation method was also measured by digital electrometer. The theoretical surface recombination current density which is the same as saturation surface recombination current density in Shibib model was $10^{-11}[A/cm^2]$ and the measured value was ranged from $8{\times}10^{-10}$ to $2{\times}10^{-9}[A/cm^2]$. Comparing with the ideal p-n junction of Shockley, transparent emitter model shows improved result by $10^2$ order of saturation current density. But there still exists $10^2$ order of difference of saturation current density between theoretical and actual values, which are assumed to be caused by 1) leakage current through solar cell edge, 2) recombination of carriers in the depletion layer, 3) the series resistance effect and 4) the tunneling of carriers between states in the band gap.

• 한국전기전자재료학회논문지
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• 제34권1호
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• pp.16-20
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• 2021

In this study, we tried finding new materials to improve the stain resistance properties of polymer insulating materials. Using the filtered vacuum arc source (FVAS) with a graphite target source, DLC thin films were deposited on silicon and polymer insulator substrates depending on their thickness to confirm the surface properties, physical properties, and structural properties of the thin films. Subsequently, the possibility of using a DLC thin film as a protective coating material for polymer insulators was confirmed. DLC thin films manufactured in accordance with the thickness of various thin films exhibited a very smooth and uniform surface. As the thin film thickness increased, the surface roughness value decreased and the contact angle value increased. In addition, the elastic modulus and hardness of the DLC thin film slightly increased, and the maximum values of elastic modulus and hardness were 214.5 GPa and 19.8 GPa, respectively. In addition, the DLC thin film showed a very low leakage current value, thereby exhibiting electrical insulation properties.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1636-1638
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• 2007

We report on low-voltage pentacene TFTs with a Al2O3/OTS as a gate dielectric. Improving device characteristics, we performed chemical modification of self-grown Al2O3 surface with an octadecyltrichlorosilane(OTS) self-assembled monolayer(SAM). As the result of this combination, the mobility was improved from 0.3 to $0.45\;cm^2/Vs$. In addition, we examined that the SAM dipole electric field have an influence on gate leakage current, transfer and output characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.82-85
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• 1997

This paper describes the development of new type arrester for 22.9kV class distribution lines, with polymer insulating materials applied to their housings. The new arrester employs silicone insulating material for its housing, instead of the conventional porcelain housing, aiming at reduction in size and weight and explosion proof against internal short circuit failure. And, since the design of sheds is not restricted. it is possible to provide a long surface leakage distance per strike length and improve anti-contamination performance.

• 한국컴퓨터정보학회:학술대회논문집
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• 한국컴퓨터정보학회 2013년도 제48차 하계학술발표논문집 21권2호
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• pp.343-344
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• 2013

본 연구에서는 RF sputtering법을 이용하여 Si기판 위에 SBN 박막을 증착시켜서, 온도 범위 600~800[$^{\circ}C$]에서 열처리를 하였는데, 650[$^{\circ}C$]에서 열처리된 박막의 경우 표면거칠기는 약 0.42[nm]로 나타났으며, 누설전류밀도는 전압 범위 -5~+5[V]에서 10-5[$A/cm^2$] 이하로 안정된 값을 나타내었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.722-726
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• 2003

본 논문에서는 Porous poly-silicon cold cathode에 의해 전자를 방출하는 Ballistic electron surface-emitting display(BSD)의 전계방출 특성을 실험했다. BSD는 nanocrystalline을 둘러싼 산화막을 multi-tunneling한 전자에 의해 발광이 되는 mechanism이기 때문에 산화막의 두께를 변수로 두어 특성을 실험했다. 900℃에서 1시간에서 3시간까지 30분 간격으로산화 반응을 진행하였으며, leakage current와 emission current의 비로 효율을 나타내었을 때 1시간 30분 동안 산화 반응을 한 시료가 가장 좋은 특성을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.86.1-86.1
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• 2015

As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.