Effect of dipole electric field on low-voltage pentacene thin film transistors

  • Kim, Kang-Dae (Intelligent & Precision Machinery Research Division, Korea Institute of Machinery & Materials (KIMM)) ;
  • Song, Chung-Kun (Dept. of Electronics Eng. Dong-A University)
  • Published : 2007.08.27

Abstract

We report on low-voltage pentacene TFTs with a Al2O3/OTS as a gate dielectric. Improving device characteristics, we performed chemical modification of self-grown Al2O3 surface with an octadecyltrichlorosilane(OTS) self-assembled monolayer(SAM). As the result of this combination, the mobility was improved from 0.3 to $0.45\;cm^2/Vs$. In addition, we examined that the SAM dipole electric field have an influence on gate leakage current, transfer and output characteristics.

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