• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1472-1474
• /
• 2001

In this paper, a method was presented to estimate the contamination degree of outdoor insulator by the measurement of surface leakage current. Contamination is one of the most important factor to determine the performance of insulator. Thus, it is very important to exam the contamination degree on the outdoor insulator. There are many limits, such as reliability of data, interval of measurement and similarity of environmental conditions, in conventional method. So, the estimation technique for contamination has been needed to monitor the accurate pollution degree of insulator in situ. In this investigation, phase difference was measured to compare the variance of phase difference with the contamination degree and relative humidity. From the result, we could confirm the capability of the estimation method.

• Journal of Mechanical Science and Technology
• /
• v.14 no.10
• /
• pp.1072-1080
• /
• 2000

Leakage magnetic flux (LMF) is widely used for non-contact detection of cracks. The combination of optics and LMF offers advantages such as real time inspection, elimination of electrical noise, high spatial resolution, etc. This paper describes a new nondestructive evaluation method based on an original magneto-optical inspection system, which uses a magneto-optical sensor, LMF, and an improved magnetization method. The improved magnetization method has the following characteristics: high observation sensitivity, independence of the crack orientation, and precise transcription of the geometry of a complex crack. The use of vertical magnetization enables the visualization of the length and width of a crack. The inspection system provides the images of the crack, and shows a possibility for the computation of its depth.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.7
• /
• pp.340-345
• /
• 2001

Because they have superior insulating properties and lower in price than their ceramic equivalents, polymeric insulators have been used in outdoor insulators. But polymeric insulators mainly using in an heavy contamination area of outdoor could be easily attached to contaminants such as salt and by-products of industrial processes. To understand its effect on contaminants adhered to these insulators, we dismounted polymeric insulators adhered contaminant in the field, and evaluated its electrical characteristics, CA, and ESDD. We also manufactured slurry mixed by some kaolin and salt for the artificial contamination test and measured the degree of contaminant, AC leakage current for these contaminated samples. Consequently, the adhered contaminants to its surface is likely to be affected the performance of insulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.1
• /
• pp.28-32
• /
• 2000

Structural and electrical properties of (Ba, Sr)TiO\ulcorner (BST) thin films prepared by pulsed laser depositon were investigated to verify the influences of post-annealing in oxygen ambient. Increase of post-anneal-ing time in oxygen ambient resulted in not only grain growth but also improvement of crystallinity of BST films. Although the post-annealing in oxygen ambient resulted in the increase of surface roughness, it assisted the dielectric constant increase by eliminating oxygen vacancies. The electrical property enhancement including high dielectric constant and low leakage current density was associated with introducing high pressure of oxygen during the post-annealing.

• Journal of the Korean Magnetics Society
• /
• v.10 no.6
• /
• pp.302-309
• /
• 2000

An MFL (Magnetic Flux Leakage) testing system has been developed in order to inspect the non-metallic inclusions in the thin steel sheets. We have made a differential type flux-gate magnetometer using the measurement of apparent coercive field strength of soft magnetic core. The specifications of the electromagnet was determined using FEM software, and MFL testing system with 3 axis degree of freedom was constructed. The feasibility testing for non-metallic inclusion was shown using the system. By digitizing MFL signal and using 2-D graphic display, we could identify various surface defects other than the inclusions.

• Transactions on Electrical and Electronic Materials
• /
• v.8 no.4
• /
• pp.153-156
• /
• 2007

Structural and electrical properties of the fully crystallized-bismuth magnesium niobate ($Bi_2Mg_{2/3}Nb_{4/3}O_7$, BMN) films with 15 mol% excess bismuth deposited on Pt bottom electrode by pulsed laser deposition are characterized for various deposition temperatures. The BMN films were crystallized with a monoclinic structure from $300^{\circ}C$ and the surface roughness slightly decreases with increasing deposition temperature. The capacitance density of the films increases with increasing deposition temperature and especially, films deposited at $400^{\circ}C$ exhibit a capacitance density of approximately $620nF/cm^2$. The crystallized BMN films with approximately 170 nm thickness exhibit breakdown strength above 600 kV/cm (${\leq}10V$) irrespective of deposition temperature and a leakage current density of approximately $2{\times}10^{-8}A/cm^2$ at 590kV/cm (at 10 V).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.17-20
• /
• 2000

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. Triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\_$p/ (Projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.39 no.3
• /
• pp.347-352
• /
• 2015

Time domain reflectometry (TDR) is widely used for wire failure detection. It transmits a pulse that is reflected at the boundaries of different characteristic impedances. By analyzing the reflected signal, TDR makes it possible to locate the failure. In this study, TDR was used to detect the water leakage at a pipe joint. A wire attached to the pipe surface was soaked by water when a leak occurred, which affected the characteristic impedance of the wet part, resulting in a change in the reflected signal. To infer the leakage from the TDR signal, we first developed a finite difference time domain-based forward model that provided the output of the TDR signal given the configuration of the transmission line. Then, by solving the inverse problem, the locations of the leaks were found.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1998.02a
• /
• pp.71-72
• /
• 1998

반도체 집적 공정의 발달로 차세대 소자용으로 30 A 이하의 극 박막 Si02 절연막이 요구되고 있으며, 현재 제품으로 50-70 A 두께의 절연막을 사용한 것이 발표되고 있다. 절연막의 두께가 앓아질수록 많은 문제가 발생할 수 있는데 그 예로 절연막의 breakdo때둥에 의한 신뢰성 특성의 악화, 절연막올 통한 direct tunneling leakage current, boron풍의 dopant 침투로 인한 소자 특성 ( (Threshold Voltage)의 불안, 전기적 stress하에서의 leakage current증가와 c charge-trap 및 피terface s쩌.te의 생성으로 인한 소자 특성의 변화 둥으로 요약 된다. 절연막의 특성올 개선하기 위해 여러 가지 새로운 공정들이 제안되었다. 그 예로, Nitrogen올 Si/Si02 계면에 doping하여 절연막의 특성을 개선하는 방법 으로 고온 열처 리 를 NH3, N20, NO 분위 기 에서 실시 하거 나, polysilicon 또는 s silicon 기판에 nitrogen올 이온 주입하여 열처리 하는 방법, 그리고 Plasma분 위기에서 Nitrogen 함유 Gas를 이용하여 nitrogen을 doping시키는 방법 둥이 연구되고 있다. 또한 Oxide cleaning 후 상온에서 성장되는 oxide를 최소화 하여 절연막의 특성올 개선하기 위하여 LOAD-LOCK을 이용하는 방법, C뼈피ng 공정의 개선올 통한 contamination 감소와 silicon surface roughness 감소 로 oxide 신뢰성올 개선하는 방법 둥이 있다. 구조적 인 측면 에 서 는 Polysilicon 의 g없n size 를 최 적 화하여 OxideIPolysilicon 의 계면 특성올 개선하는 연구와 Isolation및 Gate ETCH공정이 절연막의 특성에 미 치 는 영 향도 많이 연구되 고 있다 .. Plasma damage 가 Oxide 에 미 치 는 효과 를 제어하는 방법과 Deuterium열처리 퉁올 이용하여 Hot electron Stress하에서 의 MOS 소자의 Si/Si02 계면의 신뢰성을 개선하고 있다. 또한 극 박막 전연막의 신뢰성 특성올 통계적 분석올 통하여 사용 가능한 수명 올 예 측 하는 방법 과 Direct Tunneling Leakage current 를 고려 한 허 용 가농 한 동작 전 압 예측 및 Stress Induced Leakage Current 둥에 관해서 도 최 근 활발 한 연구가 진행되고 있다.

• Korean Journal of Materials Research
• /
• v.19 no.5
• /
• pp.253-258
• /
• 2009

Mn-substituted $BiFeO_3$(BFO) thin films were prepared by r.f. magnetron sputtering under an Ar/$O_2$ mixture of various deposition pressures at room temperature. The effects of the deposition pressure and annealing temperature on the crystallization and electrical properties of BFO films were investigated. X-ray diffraction patterns revealed that BFO films were crystallized for films annealed above $500^{\circ}C$. BFO films annealed at $550^{\circ}C$ for 5 min in $N_2$ atmosphere exhibited the crystallized perovskite phase. The (Fe+Mn)/Bi ratio decreased with an increase in the deposition pressure due to the difference of sputtering yield. The grain size and surface roughness of films increased with an increase in the deposition pressure. The dielectric constant of BFO films prepared at various conditions shows $127{\sim}187$ at 1 kHz. The leakage current density of BFO films annealed at $500^{\circ}C$ was approximately two orders of magnitude lower than that of $550^{\circ}C$. The leakage current density of the BFO films deposited at $10{\sim}30\;m$ Torr was about $5{\times}10^{-6}{\sim}3{\times}10^{-2}A/cm^2$ at 100 kV/cm. Due to the high leakage current, saturated P-E curves were not obtained in BFO films. BFO film annealed at $500^{\circ}C$ exhibited remnant polarization(2Pr) of $26.4{\mu}C/cm^2$ at 470 kV/cm.