Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Control of Defect Produced in a Retrograde Triple Well Using MeV Ion Implantation

MeV 이온주입에 의한 Retrograde Triple-well 형성시 발생하는 결함제어

  • 정희석 (홍익대학교 금속.재료공학과) ;
  • 고무순 (홍익대학교 금속.재료공학과) ;
  • 김대영 (홍익대학교 금속.재료공학과) ;
  • 류한권 (홍익대학교 금속.재료공학과) ;
  • 노재상 (홍익대학교 금속.재료공학과)
  • Published : 2000.11.01
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Abstract

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. Triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\_$p/ (Projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

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