• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.11
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• pp.1646-1649
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• 2012

The $O_2$ annealing technique has considerably suppressed the leakage current of GaN power devices, but this forms NiO at Ni-based Schottky contact with increasing on-resistance. The purpose of the present study was to fabricate 1.5 kV GaN Schottky barrier diodes by improving $O_2$-annealing process and GaN buffer. The proposed $O_2$ annealing performed after alloying ohmic contacts in order to avoid NiO construction. The ohmic contact resistance ($R_C$) was degraded from 0.43 to $3.42{\Omega}-mm$ after $O_2$ annealing at $800^{\circ}C$. We can decrease RC by lowering temperature of $O_2$ annealing. The isolation resistance of test structure which indicated the surface and buffer leakage current was significantly increased from $2.43{\times}10^7$ to $1.32{\times}10^{13}{\Omega}$ due to $O_2$ annealing. The improvement of isolation resistance can be caused by formation of group-III oxides on the surface. The leakage current of GaN Schottky barrier diode was also suppressed from $2.38{\times}10^{-5}$ to $1.68{\times}10^{-7}$ A/mm at -100 V by $O_2$ annealing. The GaN Schottky barrier diodes achieved the high breakdown voltage of 700, 1400, and 1530 V at the anode-cathode distance of 5, 10, and $20{\mu}m$, respectively. The optimized $O_2$ annealing and $4{\mu}m$-thick C-doped GaN buffer obtained the high breakdown voltage at short drift length. The proposed $O_2$ annealing is suitable for next-generation GaN power switches due to the simple process and the low the leakage current.

• Journal of the Korean Magnetics Society
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• v.26 no.1
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• pp.24-30
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• 2016

MFL (Magnetic flux leakage) type nondestructive testing has been used for inspection of underground gas pipelines to find metal defects by detecting magnetic leakage signal. Because the underground gas pipeline is exposed by environment such as high pressure with great humidity, external defects are easily formed on the surface of pipelines and they are being grouped respectively. These adjacent defects cause the signal distortion of leakage flux so that it is hard to estimate the shape information of defects. In this paper, we performed to study of the signal distortion and compensating method for multiple defects in MFL type nondestructive testing system by using 3D FEM simulation. This paper proposes the basic algorithm of defect signal analysis on multiple defects on the surface of 30 inch diameter pipeline.

• Proceedings of the Korean Magnestics Society Conference
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• 1999.04a
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• pp.46-47
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• 1999

• Proceedings of the Korean Magnestics Society Conference
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• 1999.10a
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• pp.90-91
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• 1999

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1605-1607
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• 1999

Silicone rubber have presently been using in large number for a variety of outdoor HV applications. Silicone rubber have the properties of low surface energy and are able to retain its hydrophobicity or water repellency, thereby suppress the leakage current in the present of moisture and contamination. In this paper, we investigated the recovery characteristics of silicone rubber by measuring the leakage current under salt-fog.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.40 no.6
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• pp.619-625
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• 1991

Phenomena of streaming electrification of insulting oil(T.O) is studied where the oil is contacted with solid insulating materials when it is pumped through a circulating system in a large power transformer. The leakage current, the electrical potential at the neutral terminal point of the transformer and the surface electrical potential of the oil are investigated. And the leakage current from the neutral terminal point is measured as a function of a bias polarity applied to a transformer case to investigate the polarty of ion which is absorbed in the case at the interface between the case and oil. As a result, it is found that insulating materials, and it is suggested that the leakage current is the sum of the relaxation current by positive charge from insulating oil to the neutral terminal point and by electrification current from negative charge electrified by the contact with solid insulating materials.

• The KSFM Journal of Fluid Machinery
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• v.2 no.3 s.4
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• pp.52-58
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• 1999

The leakage and rotordynamic coefficients of see-through type gas labyrinth seals are determined using a two-control-volume-model analysis with Moody's wall-friction-factor formula which is defined with a large range of Reynolds number and relative roughness. Jet flow theory are used for the calculation of the recirculation velocity in the cavity. For the reaction force from the labyrinth seal, linearized zeroth-order and the first-order perturbation equations are developed for small motion about a centered position. The leakage and rotordynamic coefficient results of the present analysis are compared with Scharrer's theoretical analysis using Blasius' wall-friction-factor formula and Pelletti's experimental results. The comparison shows that the present analysis using Moody's wall-friction-factor formula and Scharrer's theoretical analysis using Blasius' wall-friction-factor formula give the same results for a smooth seal surface and the range of Reynolds number less than $10^5$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.377-380
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• 2001

The BST thin films to composite (Ba$\sub$x/Sr$\sub$l-x/)TiO$_3$ using sol-gel method were fabricated on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric materials was investigated by structural and electrical properties. BST solution was composited by moi ratio, and then spin-coated (from 3 times to 5 times coating on Pt/SiO$_2$/Si substrate. Thickness of BST ceramics thin films are about 2600∼2800[${\AA}$] in 3 times deposition. The property of leakage current was stable when the applied voltage was 3[V]. Leakage current of 3 times coated BST thin film was 10$\^$-9/∼10$\^$-11/[A] at 0∼3[V].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1065-1070
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• 2003

HTO(High Temperature Oxide) films are mainly used as a gate insulator for polysilicon thin film transistors(Poly-Si TFT's). The HTO films, however, show the demerits of a high leakage current and a low electric breakdown voltage comparing with conventional thermal oxides even though they have a better surface in roughness than the thermal oxides. In this paper, we propose an ONO(Oxide-Nitride-Oxide) multilayer as the gate insulator for poly-Si TFT's. The leakage current and electric breakdown voltage of the ONO and HTO were measured. The drain current variation of poly-Si TFT's with a variety of gate insulators was observed. The thickness optimization in ONO films was carried out by studying I$\_$on/I$\_$off/ ratio of the poly-Si TFT's as a function of the thickness of ONO film adopted as gate insulator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.319-320
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• 2005

This paper describes the principles and structures of an expert system for arrester diagnosis. The expert system analyzes and decides the arrester condition by total leakage current, its harmonic component, and temperature because the deterioration of arresters appeared in an increase of leakage current and surface temperature of it. Additionally, influence of system voltage harmonics and ambient temperatures on leakage current changes were considered in the design. The expert system is consisted of a data acquisition module and a computer for monitoring. The acquired analog data are digitalized and transmitted to the computer by an optical link which is free from interference.