• Steel and Composite Structures
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• 제42권1호
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• pp.59-74
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• 2022

This study introduces a general reliability-based, performance-based design framework to design frames regarding their uncertainties and user-defined design goals. The Iterative-R method extracted from the main framework can designate a proper R (i.e., response modification factor) satisfying the design goal regarding target reliability index and pre-defined probability of collapse. The proposed methodology is based on FEMA P-695 and can be used for all systems that FEMA P-695 applies. To exemplify the method, multiple three-dimensional, four-story steel special moment-resisting frames are considered. Closed-form relationships are fitted between frames' responses and the modeling parameters. Those fits are used to construct limit state functions to apply reliability analysis methods for design safety assessment and the selection of proper R. The frameworks' unique feature is to consider arbitrarily defined probability density functions of frames' modeling parameters with an insignificant analysis burden. This characteristic enables the alteration in those parameters' distributions to meet the design goal. Furthermore, with sensitivity analysis, the most impactful parameters are identifiable for possible improvements to meet the design goal. In the studied examples, it is revealed that a proper R for frames with different levels of uncertainties could be significantly different from suggested values in design codes, alarming the importance of considering the stochastic behavior of elements' nonlinear behavior.

• 한국전자파학회논문지
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• 제14권6호
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• pp.648-654
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• 2003

본 논문에서는 비 산화물인 불소화합물 게이트절면막을 이용하여 박막반도체 다이아몬드 MS계면(Metal-Insulator-Semiconductor Interface)의 전기적 안정화를 실현하였다. 특히 산소 게터링 효과(Oxygen-Gettering Effect)에 의한 표면준위 억제를 통해, 박막반도체 다이아몬드 MIS계면에 있어서 최적의 전기적 특성을 부여하는 BiF2 게이트절연막을 개발하였다. 본 논문의 결과에 의하면, BaF$_2$ 게이트 절연막을 이용하여 제작한 A1/BaF2/diamond MIS 다이오드와 MISFET(Metal-Insulator-Semiconductor Field Effect Transistor)로부터 저농도의 ~10101/$\textrm{cm}^2$ eV의 표면준위밀도가 관측되었고, 그리고 이제까지 발표된 다이아몬드 박막반도_체 FET중 최고치인 400 $\textrm{cm}^2$/Vs의 유효이동도가 관찰되었다.

• 한국세라믹학회지
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• 제27권1호
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• pp.79-85
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• 1990

A study on the oxidation of SiO2 sensing layer was done at 950, 1000, 105$0^{\circ}C$ under dry O2 atmosphere. The rate determining step around the oxide layer thickness, 1000$\AA$ was different with the oxidation temperature, as follows ; ⅰ) linear growth at 95$0^{\circ}C$ and ⅱ) parabolic growth at 100$0^{\circ}C$ and 105$0^{\circ}C$. The flatness of SiO2 film was observed within $\pm$1% and surface state charge density was reduced by annealing in N2 atmosphere. Finally, pH sensitivity of SiO2 film, in the range of pH 3-9, was 20mV/pH.

• Structural Engineering and Mechanics
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• 제67권6호
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• pp.555-563
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• 2018

Architectural fabrics membranes have not only the structural performance but also act as an efficient cladding to cover large areas. Because of the direct relationship between form and force distribution in tension membrane structures, form-finding procedure is an important issue. Ideally, once the optimal form is found, a uniform pre-stressing is applied to the fabric which takes the form of a minimal surface. The force density method is one of the most efficient computational form-finding techniques to solve the initial equilibrium equations. In this method, the force density ratios of the borders to the membrane is the main parameter for shape-finding. In fact, the shape is evolved and improved with the help of the stress state that is combined with the desired boundary conditions. This paper is evaluated the optimum amount of this ratio considering the curvature of the flexible boarders for structural configurations, i.e., hypar and conic membranes. Results of this study can be used (in the absence of the guidelines) for the fast and optimal design of fabric structures.

• Geomechanics and Engineering
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• 제32권3호
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• pp.335-346
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• 2023

For structures with underground basement walls, the soil-structure-interaction between the side soil and the walls affects the response of the system. There is interest in quantifying the relationship between the lateral earth pressure and the wall displacement using p-y curves. To date, passive p-y curves in available limited studies were assumed elastic-perfectly plastic. In reality, the relationship between earth pressure and wall displacement is complex. This paper focuses on studying the development of passive p-y curves behind rigid walls supporting granular soils. The study aims at identifying the different components of the passive p-y relationship and proposing a rigorous non-linear p-y model in place of simplified elastic-plastic models. The results of the study show that (1) the p-y relationship that models the stress-displacement response behind a rigid basement wall is highly non-linear, (2) passive p-y curves are affected by the height of the wall, relative density, and depth below the ground surface, and (3) passive p-y curves can be expressed using a truncated hyperbolic model that is defined by a limit state passive pressure that is determined using available logarithmic spiral methods and an initial slope that is expressed using a depth-dependent soil stiffness model.

• 반도체디스플레이기술학회지
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• 제10권1호
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• pp.57-61
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• 2011

To develop high efficiency crystalline solar cells, the rear surface passivation is very important. In this paper, $Al_2O_3$ films deposited by thermal ALD(atomic layer deposition) method were studied for rear surface passivation of crystalline solar cells and their passivation properties were evaluated. After the deposition of $Al_2O_3$ films on p-type Si wafers, the lifetime was increased very much due to the reduction of interface state density and the field effects of the negative fixed charge in the films. Also, optimum annealing condition and effects of SiNx capping layer were investigated. The best lifetime was obtained when the films were annealed at $400^{\circ}C$ for 15min. And the lifetime degradation of the $Al_2O_3$ films with SiNx capping layers was improved compared to those without the capping layers.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.743-747
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• 2003

The improvement of luminance and luminous efficiency is the one of the most important part in AC-PDPs. To achieve high luminance and luminous efficiency, high VUV emission efficiency is needed. We measured the emission spectra of vacuum ultraviolet(VUV) and infrared(IR) rays in surface discharge AC-PDP with Ne-Xe mixture gas. The influence of Ne-Xe gas-mixture ratio on resonance state $Xe^{\ast}(3P_{1})$ and exited state $Xe^{\ast}(3P_{2})$ has been investigated. It is found that the intensity of VUV 147nm emission is proportional to that of the IR 828 nm emission, and the VUV 173nm emission is roughly proportional to that of the IR 823nm emission. The electron temperature and plasma density have been experimentally measured from the center of sustaining electrode gap by a micro Langmuir probe in AC-PDPs. The plasma density from the center of sustaining electrode gap are shown to be maximum value of $9{\times}10^{11}cm^{-3}$, where the electron temperature is about 1.6 eV in this experiment

• Bulletin of the Korean Chemical Society
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• 제35권11호
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• pp.3261-3266
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• 2014

A pellet of polycrystalline $CuGaO_2$ with a delafossite structure was prepared from $Ga_2O_3$ and CuO by high-temperature solid-state synthesis. The $CuGaO_2$ pellet was a p-type semiconductor for which the electrical conductivity, carrier density, carrier mobility and Seebeck coefficient were $5.34{\times}10^{-2}{\Omega}^{-1}cm^{-1}$, $3.5{\times}10^{20}cm^{-3}$, $9.5{\times}10^{-4}cm^2V^{-1}s^{-1}$ at room temperature, and $+360{\mu}V/K$, respectively. It also exhibited two optical transitions at about 2.7 and 3.6 eV. The photoelectrochemical properties of the $CuGaO_2$ pellet electrode were investigated in aqueous electrolyte solutions. The flat-band potential of this electrode, determined using a Mott-Schottky plot, was +0.18 V vs SCE at pH 4.8 and followed the Nernst equation with respect to pH. Under UV light illumination, a cathodic photocurrent developed, and molecular hydrogen simultaneously evolved on the surface of the electrode due to the direct reduction of water without deposition of any metal catalyst.

• Corrosion Science and Technology
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• 제7권1호
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• pp.40-44
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• 2008

Passive metal forms an interfacial diffuse layer on the surface of passive film by its reaction with $H^+$ or $OH^-$ ions in solution depending on solution pH. There is a critical pH, called pH point of iso-selectivity ($pH_{pis}$) at which the nature of the diffuse layer is changed from the anion-permeable at pH<$pH_{pis}$ to the cation-permeable at pH>$pH_{pis}$. The $pH_{pis}$ for a passivated Fe was determined by examining the effects of pH on the thickness of passive film and on the dissolution reaction occurring on the passive film under a gavanostatic reduction in borate-phosphate buffer solutions at various pH of 7~11. The steady-state thickness of passive film formed on Fe showed the maximum at pH 8.5~9, and further the nature of film dissolution reaction was changed from a reaction producing $Fe^{3+}$ ion at $pH\leq8.5$ to that producing $FeO_2{^-}$ at $pH\geq9$, suggesting that the $pH_{pis}$ of Fe is about pH 8.5~9. In addition, the passive film formed at pH 8.5~9, $pH_{pis}$, was found to be the most protective with the lowest defect density as confirmed by the Mott-Schottky analysis. Pitting potential was decreased with increasing $Cl^-$ concentration at $pH\leq8.5$ due probably to the formation of anion permeable diffuse layer, but it was almost constant at $pH\geq9$ irrespective of $Cl^-$ concentration due primarily to the formation of cation permeable diffuse layer on the film, confirming again that $pH_{pis}$ of Fe is 8.5~9.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.94-94
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• 2009

최근 실리콘 태양전지는 점점 얇아 지는 추세에 있다. 실리콘 태양전지에 있어 실리콘의 두께를 감소시키는 것은 실리콘 소모량을 줄이는데 있어 필수적인 조건이 되었다. 이에 따라 실리콘 표면의 passivation도 더욱 중요하게 여겨지고 있다. 실리콘 태양전지의 passivation막의 한 종류인 $Al_2O_3$는 다른 산화막 물질들과는 달리 negative fixed charge를 가지고 있고 charge의 양이 다른 산화막의 density보다 높아 p-type 실리콘의 경우 후면 passivation막으로 이용이 고려되고 있다. 본 연구에서는 atomic layer deposition으로 $Al_2O_3$막을 실리콘 위에 증착하여 열처리에 따른 그 특성을 비교하고 태양전지를 제작하였다. $Al_2O_3$막을 rapid thermal annealing을 통해 서로 다른 분위기에서 열처리 한 결과를 capacitance-voltage를 통해 측정하여 비교, 분석하였고 ellipsomety 분석을 통해 광학적 특성을 비교하였다. 또한 열처리 온도의 변화에 따른 $Al_2O_3$내에 charge에 변화가 있다는 것을 관찰하였다. 이러한 charge의 변화가 태양전지의 passivation에 영향을 주는지 관찰하기 위해 Quasi-steady state photoconductace를 통해 lifetime의 변화를 관찰 하였다. 이러한 실험결과로부터 열처리 분위기와 온도를 최적화 하여 태양전지 passivation 특성을 증가시킬 수 있었다.