Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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A Study on the SiO2Sensing Layer Used in ISFET

ISFET용 SiO2 감응박막에 관한 연구

  • 최두진 (한국과학기술연구원 무기재료연구실) ;
  • 임공진 (연세대학교 요업공학과) ;
  • 정형진 (한국과학기술연구원 무기재료연구실) ;
  • 김창은 (연세대학교 요업공학과)
  • Published : 1990.01.01
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Abstract

A study on the oxidation of SiO2 sensing layer was done at 950, 1000, 105$0^{\circ}C$ under dry O2 atmosphere. The rate determining step around the oxide layer thickness, 1000$\AA$ was different with the oxidation temperature, as follows ; ⅰ) linear growth at 95$0^{\circ}C$ and ⅱ) parabolic growth at 100$0^{\circ}C$ and 105$0^{\circ}C$. The flatness of SiO2 film was observed within $\pm$1% and surface state charge density was reduced by annealing in N2 atmosphere. Finally, pH sensitivity of SiO2 film, in the range of pH 3-9, was 20mV/pH.

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