• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.255-255
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• 2011

Zinc oxide based thin films have been extensively studied in recent several years because they have very interesting properties and zinc oxide is non-poisonous, abundant and cheap material. ZnO films are employed in different applications like transparent conductive layers in solar cells, protective coatings and so on. Wide industrial application of the ZnO films requires of development of cheap, effective and scalable technology. Typically used technologies don't completely satisfy the industrial requirements. In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photoelectron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Increasing of the oxygen content in the gas mixture during deposition allow to obtain high-resistive protective and insulation coatings with high adhesion to the metallic surface.

• Journal of the Korean Ceramic Society
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• v.36 no.4
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• pp.391-402
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• 1999

Characteristics of composite electrolytes which were prepared by coating a thin film of YSZ (yttria sta-bilized zirconia : (ZrO2)0.92 (Y2O3)0.08) on YDC (yttria doped ceria : Ce0.8Y0.2O1.9) with mixed conductivity have been investigated in order to develop the low-temperature solid oxide fuel cell. The thickness (t) of spin-coated YSZ thin films after the heat-treatment at 600$^{\circ}C$ was increased proportionally to the sol con-centrations (C) while the decrease in its thickness with the spin rate ($\omega$) could be expressed in the e-quation of ln t=9.49-0.53 ln $\omega$(0.99mol//s sol conc.) When the sol concentration and the spin rate being less than 0.99 mol/l and higher than 1000 rpm respectively reliable YSZ/YDC composite electrolytes could be obtained by multi-coating although several micro-cracks were observed in singly coated YSZ film surfaces. The dense YSZ film with a 1$\mu\textrm{m}$ thickness was prepared by coating of 0.99 mol/l YSZ sol five-times at 2000 rpm followed by heat-treatment at 1400$^{\circ}C$ for 2h, The adhesion between YSZ film and YDC substrate was found to be very good. The open circuit voltages of H2/O2 single cell with YSZ/YDC composite electrolytes were 0.79∼0.82 V at 800$^{\circ}C$ and 0.75∼0.77V at 900$^{\circ}C$ The open circuit voltage was inversely proportioned to the thickness ratio of YSZ thin film (1$\mu\textrm{m}$) to YDC substrate(0.28-2.22 mm)

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.56.1-56.1
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• 2009

The intermediate operating temperature of solid oxide fuel cells (IT-SOFCs) have achieved considerable importance in the area of power fabrication. This is because to improve materials compatibility, their long-term stability and cost saving potential. However, to conserve rational cell performance at reduced-temperature regime, cathode performance should be obtained without negotiating the internal resistance and the electrode kinetics of the cell. Recently, double perovskite structure cathodes have been studied with great attention as a potential material for IT-SOFCs. In this study, double-perovskite structured cathodes of $GdBaCoCuO_{5+\delta}$, $GdBaCo_{2/3}Cu_{2/3}Fe_{2/3}O_{5+\delta}$ compositions and $(1-x)GdBaCo_2O_{5+\delta}+xCe_{0.9}Gd_{0.1}O_{1.95}$ (x = 10, 20, 30 and 40 wt.%) composites were evaluated as the cathode for intermediate temperature solid oxide fuel cells(IT-SOFCs). Electrical conductivity of the cathodes were measured by DC 4-probe method, and the thermal expansion coefficient of each sample was measured up to $900^{\circ}C$ by a dilatometer study. Area specific resistances(ASR) of the $GdBaCo_{2/3}Cu_{2/3}Fe_{2/3}O_{5+\delta}$ cathode and 70 wt.% $GdBaCo_2O5+\delta$ + 30wt.% Ce0.9Gd0.1O1.95 composite cathode on CGO electrolyte substrate were analyzed using AC 3-probe impedance study. The obtained results demonstrate that double perovskite-based compositions are promising cathode materials for IT-SOFCs.

• Solar Energy
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• v.11 no.1
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• pp.41-49
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• 1991

In this study, the (P)SiC/(N)Si solar cell is fabricated by the vacuum evaporation method with the substrate temperature at about $200{\pm}5[5^{\circ}C]$ and its characteristics are investigated. The optimal thickness of $1.2[{\mu}m]$ of SiC film is derived from the relation between film thickness and conversion efficiency. The characteristics of solar cells are improved by the annealing. The optimum annealing temperature and duration are $420[^{\circ}C]$ and 12[min], respectively it is shown that the peak values of spectral response are shifted to the long wavelength region with increasing the annealing temperature. The X-ray diffraction patterns and the scanning electron micrographs show the grain grow thin SiC film as the annealing temperature and time is increased. The best conversion efficiency is 11.7[%] for a $2.5{\times}1[cm^2]$ cell.

• Korean Journal of Materials Research
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• v.19 no.8
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• pp.452-456
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• 2009

In high-efficiency Cu(In,Ga)$Se_2$ solar cells, Na is doped into a Cu(In,Ga)$Se_2$ light-absorbing layer from sodalime-glass substrate through Mo back-contact layer, resulting in an increase of device performance. However, this supply of sodium is limited when the process temperature is too low or when a substrate does not supply Na. This limitation can be overcome by supplying Na through external doping. For Na doping, an NaF interlayer was deposited on Mo/glass substrate. A Cu(In,Ga)$Se_2$ absorber layer was deposited on the NaF interlayer by a three-stage co-evaporation process As the thickness of NaF interlayer increased, smaller grain sizes were obtained. The resistivity of the NaF-doped CIGS film was of the order of $10^3{\Omega}{\cdot}cm$ indicating that doping was not very effective. However, highest conversion efficiency of 14.2% was obtained when the NaF thickness was 25 nm, suggesting that Na doping using an NaF interlayer is one of the possible methods for external doping.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.88-94
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• 2014

The structural, optical and electrical properties of sputter-deposited CIGS films were directly influenced by the sputtering process parameters such as substrate temperature, working pressure, RF power and distance between target and substrate. CIGS thin films deposited by using a quaternary target revealed to be Se deficient due to Se low vapor pressure. This Se deficiency affected the overall stoichiometry of the films, causing the films to be Cu-rich. Current tends to pass through the Cu-Se channels which act as the shunting path increasing the film conductivity. The crystal structure of CIGS thin films depends on the substrate orientation due to the influence of surface morphology, grain size and stress of Mo substrate. The excess of Cu was removed from the CIGS films by KCN treatment, achieving a suitable Cu concentration (referred as Cu-poor) for the fabrication of solar cell. Due to high Cu concentrations on the CIGS film surface induced by Cu-Se phases after CIGS film deposition, KCN treatment proved to be necessary for the fabrication of high efficiency solar cells. Also during KCN treatment, dislocation density and lattice parameter decreased as excess Cu was removed, resulting in increase of bandgap and the decrease of conductivity of CIGS films. It was revealed that Cu-Se secondary phase could be removed by KCN wet etching of CIGS films, allowing the fabrication of high efficiency absorber layer.

• Journal of Microbiology and Biotechnology
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• v.4 no.2
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• pp.119-125
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• 1994

Steroid $\Delta^1$-dehydrogenase purified from hydrocortisone-induced cells of Arthrobacter simplex converted various 3-ketosteroids into their corresponding $\Delta^1$-dehydrogenated products. The transformation efficiencies depend upon the chemical structure of the steroids, especially length of the side chain at 17 position and hydroxyl groups at 11 and 17 positions. The Km values for androstenedione, the most favorable substrate examined, and hydrocortisone were 74 ${\mu}M$ and 294 ${\mu}M$, respectively. The optimum temperature and pH of the enzyme reaction were 35$^{\circ}C$ and pH 9, respectively, and the enzyme was relatively stable at the range from 20 to 35$^{\circ}C$ and from pH 5 to 10 after one hour of incubation. The enzyme activity was markedly inhibited in the presence of $Cu^{2+},\;Fe^{3+},\;Hg^{2+},\;Mo^{6+}$ ions, and somewhat inhibited by $Zn^{2+}$ and $Fe^{2+}$. $\alpha,\alpha'$-Dipyridyl that inhibits 9$\alpha$-hydroxylase and accumulates 1,4-androstadiene-3,17-dione from sterols revealed no inhibitory effect on this enzyme. EGTA showed inhibitory effect. $\beta$-Estradiol competitively inhibited the enzyme activity. Chemical modifications of the enzyme were attempted with several reagents. p-Hydroxymer-curibenzoate showed inhibition of the enzyme activity and protection of the substrate. This suggests that cysteine residue may be involved in the active site of the enzyme.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.322-327
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• 2006

CdS films have been prepared on polycarbonate, polyethylene terephthalate, and Coming 7059 substrates by r.f magnetron sputtering technique at room temperature. A comparison of the properties of the films deposited on polymer and glass substrates was performed. In addition, the influence of the sputter power on the structural and optical properties of these films was evaluated. The XRD measurements revealed that CdS films were polycrystalline and retained the mixed structure of hexagonal wurtzite and cubic phase, regardless of substrate types. As the sputter power was increased from 75 to 150 Watt, the structure of CdS films was converted from the mixed of hexagonal and cubic phase to hexagonal phase. The morphology of CdS films is found to be continuous and dense. Also, the grain of CdS films is larger with increasing the sputter power. The average transmittance exceeded 80 % in the visible spectrum for all films and decreases slightly with the sputter power.

• Journal of Microbiology and Biotechnology
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• v.12 no.5
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• pp.766-772
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• 2002

The plasmid, pJHKJ4, containing the endoxylanase gene, was introduced into Bacillus subtilis DB 104. The recombinant cells produced 587 unit/ml of endoxylanase at 33 h. The endoxylanase was immobilized covalently on the surface of silica fur effective xylan hydrolysis. The activities of the immobilized and free endoxylanases were optimal at pH 6.5 and 10 mM $MnSO_4$. The optimal temperature of the immobilized endoxylanase was $60^{\circ}C$, whereas that of the free endoxylanase was $65^{\circ}C$. Under these optimal conditions, the activity of the immobilized endoxylanase was 1.7 times higher than that of the fee endoxylanase. From microscope photographs, the immobilized endoxylanase was found to be bounded and evenly distributed on the surface of silica, a nonporous solid support. The enzyme kinetics between the immobilized and free endoxylanases was estimated to be uncompetitive, when plotting double-reciprocal plots against xylan concentrations and endoxylanase activities. These results suggest that the higher activity of the immobilized endoxylanase may be due to increased formation of enzyme-substrate complex, because of the easy accessibility of the immobilized enzyme to the polysaccharide-xylan as a high molecular weight substrate.