Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Na Doping Properties of Cu(In,Ga)Se2 Absorber Layer Using NaF Interlayer on Mo Substrate

Mo 기판위의 NaF 중간층을 이용한 Cu(In,Ga)Se2 광흡수층의 Na 도핑특성에 관한 연구

  • 박태정 (한국과학기술원 신소재공학과) ;
  • 신동협 (한국과학기술원 신소재공학과) ;
  • 안병태 (한국과학기술원 신소재공학과) ;
  • 윤재호 (한국에너지기술연구원)
  • Published : 2009.08.27
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Abstract

In high-efficiency Cu(In,Ga)$Se_2$ solar cells, Na is doped into a Cu(In,Ga)$Se_2$ light-absorbing layer from sodalime-glass substrate through Mo back-contact layer, resulting in an increase of device performance. However, this supply of sodium is limited when the process temperature is too low or when a substrate does not supply Na. This limitation can be overcome by supplying Na through external doping. For Na doping, an NaF interlayer was deposited on Mo/glass substrate. A Cu(In,Ga)$Se_2$ absorber layer was deposited on the NaF interlayer by a three-stage co-evaporation process As the thickness of NaF interlayer increased, smaller grain sizes were obtained. The resistivity of the NaF-doped CIGS film was of the order of $10^3{\Omega}{\cdot}cm$ indicating that doping was not very effective. However, highest conversion efficiency of 14.2% was obtained when the NaF thickness was 25 nm, suggesting that Na doping using an NaF interlayer is one of the possible methods for external doping.

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References

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