• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 자원환경지질
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• 제43권1호
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• pp.13-20
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• 2010

휴 폐 광산으로부터 유출되는 산성광산배수는 낮은 pH와 다량의 중금속 이온을 포함하고 있어 지하수·하천 오염 및 주변 환경 파괴의 원인이 되고 있다. 본 연구는 자연정화시설에서 기질물질의 흡착 특성 평가에 중점을 두었다. 이를 위해 버섯퇴비에 의해 광미로부터 용출된 중금속이 흡착 처리 되는 과정에서 황산염환원균의 영향을 파악하였고, $Cd^{2+}$, $Cu^{2+}$, $Pb^{2+}$, $Zn^{2+}$을 포함한 인공 광산배수와 버섯퇴비를 반응시켜 중금속 흡착 처리 효율 평가 및 등온흡착곡선에 관해 고찰하였다. 연구 결과 광미에서 용출된 Mn은 미생물 혹은 흡착에 의한 안정화가 이루어지지 않은 것으로 나타났으며. Zn의 경우 황산염환원균에 의한 제거 기작이 중요한 역할을 하고 있음을 보여주었다. Fe는 미생물을 제거한 경우보다 미생물이 존재할 경우 다량의 Fe가 용출되었으며 이는 철환원박테리아가 $Fe^{3+}$를 소모함에 따라 Fe를 포함한 광물이 용해되어 용출되었기 때문이라고 추측된다. 버섯퇴비 투여 시 산화환원전위 (Oxidation Reduction Potential) 와 pH 측정을 통해 환원 환경 및 중성 환경이 조성됨을 확인 할 수 있었다. 인공 광산배수를 사용한 흡착실험결과 pH 6 조건에서 버섯퇴비의 중금속 흡착 효율이 90% 이상으로 매우 높게 나타났으며, pH 3 조건에서는 보다 낮은 흡착 효율을 보였다.

• 한국조경학회지
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• 제40권2호
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• pp.130-137
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• 2012

본 연구는 유기질 비료와 멀칭재에 따른 리아트리스(Liatrisspicata)의 생육을 조사하여 무관수 옥상녹화에서의 효용성을 알아보고자 실시하였다. 4가지의 멀칭처리(무처리, 난석 멀칭, 바크 멀칭, 검은색 부직포 멀칭)와 3가지의 유기질 비료처리($A_1O_0$, $A_4O_1$, $A_1O_1$)로 총 12가지의 처리구를 옥상에 배치하였다. 생육측정은 2010년 4월부터 10월까지 초장, 엽수, 꽃대직경, 소화수, 엽록소 함량, 지상부 생체중 및 건조중 등을, 생존율은 이듬해인 2011년 5월에 조사하였다. 1. 인공배합토 100%($A_1O_0$)처리구의 경우, 검은색 부직포 멀칭에서 리아트리스의 엽수, 소화수, 엽록소 함량 등이 높았고, 특히, 초장, 지상부 생체중, 지상부 건조중 등은 다른 멀칭처리에 비해 확연한 차이를 보였다. 동면 후 생존율은 무처리와 난석 멀칭이 100%, 바크 멀칭에서는 20%,검은색 부직포 멀칭에서는 0%의 생존율을 보였다. 2.인공배합토 80%, 유기질 비료 20%($A_4O_1$)의 경우, 검은색 부직포 멀칭에서 리아트리스의 초장, 엽수, 소화수, 지상부, 생체중, 지상부 건조중 등이 다른 멀칭처리에 비해 높았으나, 초장을 제외하고 뚜렷한 차이를 보이지 않았다. 동면 후 생존율은 $A_1O_0$와 비교해볼 때 약 40~60% 정도 감소하였다. 3. 인공배합토 50%, 유기질 비료 50%($A_1O_1$)의 경우, 검은색 부직포 멀칭이나 바크 멀칭에서 리아트리스의 초장, 꽃대직경, 소화수, 엽수, 엽록소 함량, 지상부 생체중, 지상부 건조중 등이 다른 멀칭처리에 비해 좀 더 높았으나 통계적인 유의성은 없었다. 동면 후 생존율은 모든 멀칭처리에서 0%를 나타냈다. 따라서, 무관수 옥상녹화에서 리아트리스의 생육과 개화는 검은색 부직포 멀칭에서 가장 양호하였다. 반면, 동면 후 생존율은 유기질 비료의 비율이 높을수록 저하되는 경향을 보였다.

• 한국결정성장학회지
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• 제15권6호
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• pp.252-259
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• 2005

[ $CuGaSe_2$ ] 단결정 박막은 수평 전기로에서 합성한 $CuGaSe_2$ 다결정을 증발원으로하여, hot wall epitaxy(HWE) 방법으로 증발원과 기판(반절연성 GaAs(100))의 온도를 각각 $610^{\circ}C,\;450^{\circ}C$로 고정하여 단결정 박막을 성장하였다. 이때 단결정 박막의 결정성은 광발광 스펙트럼(PL)과 이중결정 X-선 요동곡선 (DCRC)으로부터 구하였다. Hall 효과는 Van der Pauw 방법에 의해 측정되었으며, 293 K에서 운반자 농도와 이동도는 각각 $4.87{\times}10^{17}/cm^3,\;129cm^2/V{\cdot}s$였다. $n-Cds/p-CuGaSe_2$ 합 태양전지에 $80mW/cm^2$의 광을 조사시켜 최대 출력점에서 전압은 0.41 V, 전류밀도는 $21.8mA/cm^2$였고, fill factor는 0.75 그리고 태양전지 전력변환 효율은 11.17% 였다.

• 마이크로전자및패키징학회지
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• 제23권2호
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• pp.65-71
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• 2016

본 연구에서는 나노 입자 적층 시스템(Nano Particle Deposition System, NPDS)을 이용하여 전기변색소자의 작동 전극을 적층하고 또한 염료 감응 태양전지의 반도체 층으로 사용되는 $TiO_2$층 및 전기변색소자의 이온 저장 층으로 사용되는 Antimony Tin Oxide(ATO) 층을 제작하였다. NPDS는 상온 건식 분말 적층법으로 노즐을 통하여 초음속으로 가속된 분말의 높은 에너지를 이용하여 기판에 적층하는 새로운 개념의 건식 적층 방법이다. 본 연구에서 코팅된 물질의 두께는 전기변색소자의 투과율에 영향을 끼치는데, 이는 표면 프로파일 측정법(surface profiling method)으로 측정하였으며, 적층된 $TiO_2$와 ATO 및 복합 층의 미세 구조를 확인하기 위해 SEM을 이용한 분석을 진행하였다. 한편 염료 감응 태양전지의 광 변환 효율은 솔라 시뮬레이터로 분석하였다. 또한 UV-visible spectrometer와 power source를 이용하여 630 nm 대역에서 전기 변색 소자가 갖는 투과도 변화와 낮은 전압에서의 작동 및 변색 횟수를 측정하였으며, 결과적으로 상기 과정을 거쳐 제작되고, 측정된 염료 감응 태양전지 - 전기 변색 통합 구조 소자를 자체 제작한 에너지 하베스팅 시스템과 연결하여 통합 구조 소자 내 태양전지의 전압 발생을 통해 자체 구동이 가능한 전기 변색 소자 시스템 제작에 성공하였다. NPDS를 통해 제작된 변색 소자의 경우, 최대 49%의 투과도 변화와 500회 작동에서 C-V curve를 유지함을 측정하여 성능과 내구성을 입증하였고, 통합 소자 내 태양 전지의 광 변환 효율은 최대 2.55%로 측정되었으며, 통합 소자 내 변색 소자의 경우 최대 26%의 투과도 변화를 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.434-434
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• 2012

Despite recent efforts for fabricating flexible transparent conducting films (TCFs) with low resistance and high transmittance, several obstacles to meet the requirement of flexible displays still remain. Indium tin oxide (ITO) thin films, which have been traditionally used as the TCFs, have a serious obstacle in TCFs applications. SWNTs are the most appropriate materials for conductive films for displays due to their excellent high mechanical strength and electrical conductivity. Recently, it has been demonstrated that acid treatment is an efficient method for surfactant removal. However, the treatment has been reported to destroy most SWNT. In this work, the fabrication by the spraying process of transparent SWNT films and reduction of its sheet resistance by Au-ionic doping treatment on PET substrates is researched. Arc-discharge SWNTs were dispersed in deionized water by adding sodium dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWNT was spray-coated on PET substrate and dried on a hotplate. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then was doped with Au-ionic doping treatment, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. This was confirmed and discussed on the XPS and UPS studies. We show that 87 ${\Omega}/{\Box}$ sheet resistances with 81% transmittance at the wavelength of 550 nm. The changes in electrical and optical conductivity of SWNT film before and after Au-ionic doping treatments were discussed. The effects of hole transport interface layer using Au-ionic doping SWNT on the performance of organic solar cells were investigated.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.42.2-42.2
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• 2010

Transparent conducting oxides (TCOs) are of significant importance for their applications in various devices, such as light-emitting diodes, thin-film solar cells, organic light-emitting diodes, liquid crystal displays, and so on. In order for TCOs to contribute to the performance improvement of these devices, TCOs should have high transmittance and good electrical properties simultaneously. Sn-doped $In_2O_3$ (ITO) is the most commonly used TCO. However, indium is toxic and scarce in nature. Thus, ZnO has attracted a lot of attention because of the possibility for replacing ITO. In particular, group III impurity-doped ZnO showed the optoelectronic properties comparable to those of ITO electrodes. Al-doped ZnO exhibited the best performance among various doped ZnO films because of the high substitutional doping efficiency. However, in order for the Al-doped ZnO to replace ITO in electronic devices, their electrical and optical properties should further significantly be improved. In this connection, different ways such as a variation of deposition conditions, different deposition techniques, and post-deposition annealing processes have been investigated so far. Among the deposition methods, RF magnetron sputtering has been extensively used because of the easiness in controlling deposition parameters and its fast deposition rate. In addition, when combined with post-deposition annealing in a reducing ambient, the optoelectronic properties of Al-doped ZnO films were found to be further improved. In this presentation, we deposited Al-doped ZnO (ZnO:$Al_2O_3$ = 98:2 wt%) thin films on the glass and sapphire substrates using RF magnetron sputtering as a function of substrate temperature. In addition, the ZnO samples were annealed in different conditions, e.g., rapid thermal annealing (RTA) at $900^{\circ}C$ in $N_2$ ambient for 1 min, tube-furnace annealing at $500^{\circ}C$ in $N_2:H_2$=9:1 gas flow for 1 hour, or RTA combined with tube-furnace annealing. It is found that the mobilities and carrier concentrations of the samples are dependent on growth temperature followed by one of three subsequent post-deposition annealing conditions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.114-114
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• 2009

ZnO has received considerable attention due to its potential applicability to optoelectronic devices such as ultraviolet-light emitting diodes (UVLEDs) and laser diodes (LDs). As well known, however, polar ZnO with the growth direction along the c-axis has spontaneous and piezoelectric polarizations that will result in decreased quantum efficiency. Recently, nonpolar ZnO has been studied to avoid such a polarization effect. In order to realize applications of nonpoar ZnO-based films to LEDs, growth of high quality alloys for quantum well structures is one of the important tasks that should be solved. $Mg_xZn_{1-x}O$ and $Cd_xZn_{1-x}O$ is ones of most promising alloys for this application because the alloys of ZnO with MgO and CdO provide a wide range of band-gap engineering spanning from 2.4 to 7.8 eV. In this study, we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios. The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). With the relatively low Mg/Zn flux ratios, a typical striated anisotropic surface morphology which was generally observed from the nonpolar (11-20) ZnO film on r-plane sapphire substrates. By increasing the Mg/Zn flux ratio, however, additional islands were appeared on the surface and finally the surface morphology was entirely changed, which was generally observed for the (0001) polar ZnO films by losing the striated morphology. Investigations by X-ray $\Theta-2{\Theta}$ diffraction revealed that (0002) and (10-11) ZnO planes are appeared in $Mg_xZn_{1-x}O$ films by increasing the Mg/Zn flux ratio. Further detailed investigation by transmission electron microscopy (TEM) and photoluminescence (PL) will be discussed.

• Asian-Australasian Journal of Animal Sciences
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• 제24권5호
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• pp.636-642
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• 2011

The effect of different rates of ethanol additive on fermentation quality of napiergrass (Pennisetum purpureum) and residual water soluble carbohydrate were studied in the experiment. The addition rate of ethanol was 0%, 1.5%, 2.5%, 3.5%, 4.5% on fresh weight of napiergrass. The laboratory silos were kept in the room, then were opened on 1, 3, 5, 7, 14, 30 days after ensiling and the changes of silage quality were analyzed, respectively. There was a fast and large reduction in pH from the 5th day of ensiling to below 4.2 except for the 4.5% treatment. After five days the pH of silage decreased slowly and the pH of the ethanol additions was lower than the control. Lactic acid content of ethanol treatments increased significantly (p<0.05) from the 5th day of ensiling, reaching the highest value on either the 7th day or 14th day. The ethanol additive inhibited the break down of silage protein and the ammonia nitrogen content of ethanol addition silage was significantly (p<0.05) lower than the control after 30 days of ensiling. Within the initial first day of ensiling the water soluble carbohydrate content declined quickly. The efficiency of water soluble carbohydrate usage was higher in silage with ethanol than in the control. The acetic acid of ethanol treatment was significantly (p<0.05) lower than control on first and 14th day, but there was no significant (p>0.05) difference among the ethanol addition silages. The volatile fatty acids content of silage increased gradually from the first day of ensiling and reached the peak on 14th day or 30th day and the content of ethanol addition treatment was significantly (p<0.05) lower than the control. The experimental results indicated that adding ethanol inhibited the use of protein and water soluble carbohydrate of aerobic bacteria and reduced the silage losses during the early stage of ensiling and thus supplied more fermentation substrate for lactic acid bacteria and improved the fermentation quality of napiergrass.

• 유기물자원화
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• 제8권3호
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• pp.112-117
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• 2000

음식물쓰레기는 높은 함수율과 VS(volatile solids) 함량으로 인해 수거, 운반 및 매립에 있어서 부패, 악취, 침출수 등의 주요 원인이 되고 있다. 음식물쓰레기의 산발효는 기질의 생분해도와 식종균의 분해능력과 같은 발효제한요소에 의해서 영향을 받는데, 음식물쓰레기의 생분해도는 잘 분해되지 않으며 전체 양의 약 50%를 차지하는 셀룰로우스 성분(야채류)과 깊은 연관이 있다. 이에 대한 효과적이면서도 경제적인 방법은 셀룰로우스의 분해능력이 뛰어난 미생물을 식종하는 것으로, 본 연구에서는 루멘미생물을 이용하여 산발효의 낮은 효율을 향상시키려 하였으며 그 값을 중온 산발효균과 비교하였다. Leaching bed 반응조에 루멘미생물을 식종했을 때의 산발효 효율은 희석율 $3.0d^{-1}$에서 71.2%의 최대값을 얻었으며, 한편 중온 산발효균을 식종하였을 때는 희석율 $4.5d^{-1}$에서 59.8%의 최대값을 얻었다. 이는 루멘미생물의 음식물쓰레기 분해능력이 보다 뛰어남을 보여주는 것이다.