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The Effect of Mean Brightness and Contrast of Digital Image on Detection of Watermark Noise (워터 마크 잡음 탐지에 미치는 디지털 영상의 밝기와 대비의 효과)

  • Kham Keetaek;Moon Ho-Seok;Yoo Hun-Woo;Chung Chan-Sup
    • Korean Journal of Cognitive Science
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    • v.16 no.4
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    • pp.305-322
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    • 2005
  • Watermarking is a widely employed method tn protecting copyright of a digital image, the owner's unique image is embedded into the original image. Strengthened level of watermark insertion would help enhance its resilience in the process of extraction even from various distortions of transformation on the image size or resolution. However, its level, at the same time, should be moderated enough not to reach human visibility. Finding a balance between these two is crucial in watermarking. For the algorithm for watermarking, the predefined strength of a watermark, computed from the physical difference between the original and embedded images, is applied to all images uniformal. The mean brightness or contrast of the surrounding images, other than the absolute brightness of an object, could affect human sensitivity for object detection. In the present study, we examined whether the detectability for watermark noise might be attired by image statistics: mean brightness and contrast of the image. As the first step to examine their effect, we made rune fundamental images with varied brightness and control of the original image. For each fundamental image, detectability for watermark noise was measured. The results showed that the strength ot watermark node for detection increased as tile brightness and contrast of the fundamental image were increased. We have fitted the data to a regression line which can be used to estimate the strength of watermark of a given image with a certain brightness and contrast. Although we need to take other required factors into consideration in directly applying this formula to actual watermarking algorithm, an adaptive watermarking algorithm could be built on this formula with image statistics, such as brightness and contrast.

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The Output Factor of Small Field in Multileaf Collimator of 6 MV Photon Beams (다엽제한기 소조사면의 6 MV 광자선 출력선량계수)

  • Lee, Ho Joon;Choi, Tae-Jin;Oh, Young Kee;Jeun, Kyung Soo;Lee, Yong Hee;Kim, Jin Hee;Kim, Ok Bae;Oh, Se An;Kim, Sung Kyu;Ye, Ji Woon
    • Progress in Medical Physics
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    • v.25 no.1
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    • pp.15-22
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    • 2014
  • The IMRT is proper implement to get high dose deliver to tumor as its shape and selective approach in radiation therapy. Since the IMRT is performed as modulated the radiation fluence by the MLC created the open shapes and its irradiation time, the dose of segment of radiation field effects on the cumulated portal dose. The accurate output factor of small and step shape of segment is important to improve the determination of deliver tumor dose as it is directly proportional to dose. This experiment performed with the 6 MV photon beam of Clinac Ex(Varian) from $3{\times}3cm^2$ to $0.5{\times}0.5cm^2$ small field size for collimator jaw in MLC free and/or for MLC open field in fixed collimator jaw $10{\times}10cm^2$ using the CC01 ion chamber, SFD diode, diamond detector and X-Omat film dosimetry. As results of normalized to the reference field of $10{\times}10cm^2$ of MLC, the output factor of $3{\times}3cm^2$ showed $0.899{\pm}0.0106$, $0.855{\pm}0.0106$ for $2{\times}2cm^2$, $0.764{\pm}0.0082$ for $1{\times}1cm^2$ and $0.602{\pm}0.0399$ for $0.5{\times}0.5cm^2$. The output factor of MLC open field has shown a maximum 3.8% higher than that of the collimator jaw open field.

Development of salt-tolerant transgenic chrysanthemum (Dendranthema grandiflorum) lines and bio-assay with a change of cell specificity (내염성 국화 형질전환 계통 육성 및 저항성 검정과 세포특성 변화)

  • Kang, Chan-Ho;Yun, Seung-Jung;Han, Bum-So;Lee, Gong-Joon;Choi, Kyu-Hwan;Park, Jong-Suk;Shin, Yong-Kyu
    • Journal of Plant Biotechnology
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    • v.38 no.1
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    • pp.1-8
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    • 2011
  • Recently the increasing of vinyl and green houses and development of reclaimed land including Saemangeum induced the need for breeding salt-tolerant crops which can survive and grow in high salinity soil. So we try to develop salt-tolerant transgenic chrysanthemum (Dendranthema grandiflorum.) lines by using anti-porter gene TANHX and HVNHX. Through marker selection and plant regeneration step, we could get 284 putative transgenic chrysanthemum lines. On selected putative transgenic plants, 40 candidates were used for genetic analysis and 30 lines could be made up of target size band on PCR, so about 75% of marker selected lines were decided as real transgenic lines. Selected 284 transgenic lines were also used for salt-tolerance test as a range of NaCl 0.2 ~ 1.2% (300 mM). As a result of salt-tolerance test, 15 selected transgenic lines could live and grow on the continuous supply of 0.8% (200 mM) NaCl solution and another 7 lines were could survive under 1.2% (300 mM) NaCl solution. This salt-tolerant transgenic lines under salt stress also lead a cell alternation especially a guard cell. A stressed guard cell be swelled and grow larger in proportion to NaCl concentration. TTC test for cell viability on transgenic chrysanthemum lines pointed out that more strong salt-tolerant lines can be live more than another under same salt stress. The numerical value of strong salt-tolerant 7 transgenic lines were 0.206 ~ 0.331 under 1.2% NaCl stress, and then it's value is more larger than middle salinity lines' 0.114 ~ 0.193 and non-transgenic's 0.046. And the proline contents as indicated stress compound also pointed out that HVNHX introduced salt-tolerant transgenic lines were less stressed than other under same salt stress. The contents of strong salt-tolerant transgenic lines were 2.255 ~ 2.638 mg/kg and it is much higher than that of middle salinity lines' 1.496 ~ 2.125.

Physicochemical Properties of Several Korean Yam Starches (한국산 마전분의 이화학적 특성)

  • Kim, Wha-Sun;Kim, Sang-Soon;Park, Yong-Kon;Seog, Ho-Moon
    • Korean Journal of Food Science and Technology
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    • v.23 no.5
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    • pp.554-560
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    • 1991
  • The physicochemical properties of Korean yam starches (D. aimadoimo, D. batatas and D. japonica) were investigated. The mean granular size of starches were 23.5 μm for D. aimadoimo, 23.9 μm for D. batatas and 18.2 μm for D. japonica. Amylose content, blue value and water binding capacity was $29{\sim}33%,\;0.42{\sim}0.51%\;and\;109.9{\sim}118.3%$, respectively. The optical transmittance of 0.3% (dry basis) yam starch suspensions were increased at $70{\sim}75^{\circ}C$ and D. japonica showed typical two-step transmittance curve. The swelling power and solubility patterns increased over $60^{\circ}C$, and D. aimadoimo was the highest values. Amylogram patterns of 5% (dry basis) yam starch suspensions, determined by Brabender amylograph, were similar to that of yam flours and the viscosity of D. aimadoimo had 630 BU, which was about 5 times higher than 130 BU for D. batatas and D. japonica. Observation under scanning electron microscope lefted marks of resistance to glucoamylase because these surfaces were similar to the natural granules. In rates of solubiliazation by dimethyl sulfoxide, D. aimadoimo showed the highest value. (3-Amylolysis limits of yam starches and their amylose were $71.8%{\sim}75.5%\;and\;90.2{\sim}92.1%$, respectively. Gel filtration patterns of debranched amylopectin by pullulanase were divided into 3 peaks. The weight ratios of peak III to peak II in yam starches were $2.15%{\sim}2.42%$.

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Ni/Au Electroless Plating for Solder Bump Formation in Flip Chip (Flip Chip의 Solder Bump 형성을 위한 Ni/Au 무전해 도금 공정 연구)

  • Jo, Min-Gyo;O, Mu-Hyeong;Lee, Won-Hae;Park, Jong-Wan
    • Korean Journal of Materials Research
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    • v.6 no.7
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    • pp.700-708
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    • 1996
  • Electroless plating technique was utilized to flip chip bonding to improve surface mount characteristics. Each step of plating procedure was studied in terms pf pH, plating temperature and plating time. Al patterned 4 inch Si wafers were used as substrstes and zincate was used as an activation solution. Heat treatment was carried out for all the specimens in the temperature range from room temperature to $400^{\circ}C$ for $30^{\circ}C$ minutes in a vacuum furnace. Homogeneous distribution of Zn particles of size was obtained by the zincate treatment with pH 13 ~ 13.5, solution concentration of 15 ~ 25% at room temperature. The plating rates for both Ni-P and Au electroless plating steps increased with increasing the plating temperature and pH. The main crystallization planes of the plated Au were found to be (111) a pH 7 and (200) and (111) at pH 9 independent of the annealing temperature.

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Effect of Tuberculin Skin Test on Ex-vivo Interferon-gamma Assay for Latent Tuberculosis Infection (투베르쿨린 검사가 결핵에 대한 체외 IFN-γ 검사 결과에 미치는 영향)

  • Lee, Jung Yeon;Choi, Hee Jin;Cho, Sang-Nae;Park, I-Nae;Oh, Yeon-Mok;Lee, Sang Do;Kim, Woo Sung;Kim, Dong Soon;Kim, Won Dong;Shim, Tae Sun
    • Tuberculosis and Respiratory Diseases
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    • v.59 no.4
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    • pp.406-412
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    • 2005
  • Background : Recently, two commercialized whole-blood assays, $QuantiFERON^{(R)}-TB$ Gold (QFT) and T $SPOT-TB^{(R)}$ (SPOT), which measure the $IFN-{\gamma}$ released in the whole blood after being incubation with mycobacterial antigens, were approved for the diagnosis of a latent tuberculosis infection (LTBI). However, there is data on whether or not the previously used PPD skin tests (TST) have any influence on the diagnostic ability of these ex-vivo $IFN-{\gamma}$ assays. Methods : Forty-six 15 year-old students who did not appear to be infected with Mycobacterium tuberculosis were enrolled in this study. The peripheral blood was collected and used for two $IFN-{\gamma}$ assays. The $IFN-{\gamma}$ assays and TST were performed at the baseline ($1^{st}$). The TST was repeated two months later ($2^{nd}$), and the $IFN-{\gamma}$ assays were repeated two ($2^{nd}$) and four months ($3^{rd}$) later only in those subjects who had negative results at the baseline in both the $IFN-{\gamma}$ assays and TST. An induration size > 10 mm was considered to be positive in the TST. Results : The mean TST value was $3.1{\pm}5.4mm$ (range: 0-20). Of the 46 subjects examined, 13 subjects (28.3%) showed positive results in the two-step TST. Nine (19.6%) were SPOT-positive and only one (2.2%) was QFT-positive. The $2^{nd}$ and $3^{rd}$ QFT were carried out in 23 and 25 all-negative subjects, respectively, and all showed negative results. The $2^{nd}$ SPOT was performed in 23 subjects and only one (4.3%) showed a weak-positive result. Conclusion : Even though there were some discrepancies in the results of the two ex-vivo $IFN-{\gamma}$ assays, it appears that their results were not influenced by a previous TST carried out in two or four months earlier.

Quaternary Geology of the Conjunction Area of the Yeongsan and Sampo rivers (영산강 하류와 삼포강 합류부 일대 제4기 지질 연구)

  • Kim, Ju-Yong;Yang, Dong-Yoon;Hong, Sei-Sun;Nahm, Wook-Hyun;Lee, Heon-Jong;Lee, Jin-Young;Kim, Jin-Kwan;Oh, Keun-Chang
    • The Korean Journal of Quaternary Research
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    • v.19 no.1
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    • pp.1-17
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    • 2005
  • This study aims to study the distribution and formation age of Quaternary deposits in the downstream of Yeongsan Estuarine River, encompassing Muan, Illo and Donggang counties. For this purpose the authors examine several borehole data, and step trench survey for excellent profiles was studied in connection with grain size population and magnetic susceptibility. As a result, it is interpreted that the coastal plain of the Yeongsan River was formed by sea level rise after Last Glacial Maximum(LGM). The fore edge/escarpment of coastal terraces distributed 7-10 m asl is assumed to be formed during the last glacial period, while the coastal terraces distributed above 7-10m asl formed during MIS 5a. In addition, the fore edge/escarpment of coastal terraces distributed above 15 m asl is presumed to be have been formed during the stadial of last interglacial period, while the formation age of coastal terraces distributed above 15m(asl) is assumed to be MIS 5e. This formation age can be estimated by the coastal terrace ages of the southeastern coast of Korean Peninsula. The characteristics of Quaternary deposits linked to paleolithic culture will eventually lead to the reconstruction of ecosystem environment of paleolithic peoples.

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A bilayer diffusion barrier of atomic layer deposited (ALD)-Ru/ALD-TaCN for direct plating of Cu

  • Kim, Soo-Hyun;Yim, Sung-Soo;Lee, Do-Joong;Kim, Ki-Su;Kim, Hyun-Mi;Kim, Ki-Bum;Sohn, Hyun-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.239-240
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    • 2008
  • As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

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Effect of moisture on sealing ability of root canal filling with different types of sealer through the glucose penetration model (수종의 실러를 이용한 근관 충전 시 근관 내 수분이 치근단 폐쇄효과에 미치는 영향)

  • Jang, Jin-Ah;Kim, Hee-Lyang;Her, Mi-Ja;Lee, Kwang-Won;Yu, Mi-Kyung
    • Restorative Dentistry and Endodontics
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    • v.35 no.5
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    • pp.335-343
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    • 2010
  • Objectives: To compared the effect of different levels of moisture of root canal on the sealing ability after filling with four different types of sealer. Materials and Methods: Single-rooted teeth (n = 90) instrumented to and apical size of 0.06 / 45 were randomly assigned to 12 experimental groups (n = 7 per group), positive/negative control groups (n = 3 per group). The teeth of the experimental groups (a. DRY; b. PAPER POINT DRY; c. WET) were obturated with sealer (Group 1-3: Sealapex; Group 4-6: AH plus; Group 7-9: Tubuli-seal; Group 10-12: EndoRez) and warm vertical compaction method. After 7 days in $37^{\circ}C$, 100% humidity, the coronal-to-apical microleakage was evaluated quantitatively using a glucose leakage model. The leaked glucose concentration was measured with spectrophotometer at 1, 3, 7, 14, 21, and 30 days. Data were recorded ad mmol/L and statistically analysed with the two-way ANOVA and Duncan test (p = 0.05). Results: Throughout the experimental period Tubuli-seal/WET (Group 9) showed the highest mean cumulative glucose penetration (178.75 mmol/L), whereas AH plus/DRY (Group 4) had the least (20.78 mmol/L). Conclusions: The results of this study demonstrated that the moisture condition of root canals at the time of obturation and the type of sealer that was used had a significant effect on leakage and sealing ability. Thus drying procedure according to sealer types is a critical step and should not be missed in endodontic treatment.

A 13b 100MS/s 0.70㎟ 45nm CMOS ADC for IF-Domain Signal Processing Systems (IF 대역 신호처리 시스템 응용을 위한 13비트 100MS/s 0.70㎟ 45nm CMOS ADC)

  • Park, Jun-Sang;An, Tai-Ji;Ahn, Gil-Cho;Lee, Mun-Kyo;Go, Min-Ho;Lee, Seung-Hoon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.3
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    • pp.46-55
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    • 2016
  • This work proposes a 13b 100MS/s 45nm CMOS ADC with a high dynamic performance for IF-domain high-speed signal processing systems based on a four-step pipeline architecture to optimize operating specifications. The SHA employs a wideband high-speed sampling network properly to process high-frequency input signals exceeding a sampling frequency. The SHA and MDACs adopt a two-stage amplifier with a gain-boosting technique to obtain the required high DC gain and the wide signal-swing range, while the amplifier and bias circuits use the same unit-size devices repeatedly to minimize device mismatch. Furthermore, a separate analog power supply voltage for on-chip current and voltage references minimizes performance degradation caused by the undesired noise and interference from adjacent functional blocks during high-speed operation. The proposed ADC occupies an active die area of $0.70mm^2$, based on various process-insensitive layout techniques to minimize the physical process imperfection effects. The prototype ADC in a 45nm CMOS demonstrates a measured DNL and INL within 0.77LSB and 1.57LSB, with a maximum SNDR and SFDR of 64.2dB and 78.4dB at 100MS/s, respectively. The ADC is implemented with long-channel devices rather than minimum channel-length devices available in this CMOS technology to process a wide input range of $2.0V_{PP}$ for the required system and to obtain a high dynamic performance at IF-domain input signal bands. The ADC consumes 425.0mW with a single analog voltage of 2.5V and two digital voltages of 2.5V and 1.1V.