• 한국전기전자재료학회논문지
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• 제30권8호
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• pp.479-483
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• 2017

The effect of $NH_3$ plasma treatment on device characteristics was confirmed for an optimized thin film transistor of poly-Si formed by ELA. When C-V curve was checked for MIS (metal-insulator-silicon), Dit of $NH_3$ plasma treated and MIS was $2.7{\times}10^{10}cm^{-2}eV^{-1}$. Also in the TFT device case, it was decreased to the sub-threshold slope of 0.5 V/decade, 1.9 V of threshold voltage and improved in $26cm^2V^{-1}S^{-1}$ of mobility. Si-N and Si-H bonding reduced dangling bonding to each interface. When gate bias stress was applied, the threshold voltage's shift value of $NH_3$ plasma treated device was 0.58 V for 1,000s, 1.14 V for 3,600s, 1.12 V for 7,200s. As we observe from this quality, electrical stability was also improved and $NH_3$ plasma treatment was considered effective for passivation.

• Journal of information and communication convergence engineering
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• 제17권2호
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• pp.161-165
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• 2019

In this study, zinc tin oxide (ZTO) thin-film transistors are researched to observe the correlation between the barrier potential and electrical properties. Although much research has been conducted on the electronic radiation from Schottky contacts in semiconductor devices, research on electronic radiation that occurs at voltages above the threshold voltage is lacking. Furthermore, the current phenomena occurring below the threshold voltage need to be studied. Bidirectional transistors exhibit current flows below the threshold voltage, and studying the characteristics of these currents can help understand the problems associated with leakage current. A factor that affects the stability of bidirectional transistors is the potential barrier to the Schottky contact. It has been confirmed that Schottky contacts increase the efficiency of the element in semiconductor devices, by cutting off the leakage current, and that the recombination at the PN junction is closely related to the Schottky contacts. The bidirectional characteristics of the transistors are controlled by the space-charge limiting currents generated by the barrier potentials of the SiOC insulated film. Space-charge limiting currents caused by the tunneling phenomenon or quantum effect are new conduction mechanisms in semiconductors, and are different from the leakage current.

• Tribology and Lubricants
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• 제6권1호
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• pp.74-81
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• 1990

The threshold of instability for a rigid rotor supported in externally pressurized airlubricated circular or non-circular journal bearings of finite length is theoretically analyzed. The analysis is performed for a bearing having one feeding plane, no recess volume, which is assumed to be a line source, and is based on a first order perturbation of journal center motion about steady state position. And then linearized system dynamic analysis is carried out. Numerical results are given, showing the threshold of instability as a function of supply pressure ratio, feeding parameter and load. It is shown that the region that 2-lobe bearing is more stable than circular bearing exists and whirl ratio of 2-lobe bearing is less than that of the other types of bearing.

• East Asian Economic Review
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• 제22권3호
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• pp.307-336
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• 2018

This paper proposes a monetary aggregate "Liquidity" that could serve as a useful indicator for gauging the appropriateness of monetary policy. If liquidity rises above a certain threshold, it is signaling that monetary policy is losing traction due to structural and other impediments even when the inflation gap remains open. This indicator supplements the financial cycle approach but adds value by providing a benchmark that is derived from the national account, and not based on its own trend. Over the last two decades, each time this measure rose above the threshold range, it was followed by a decline in GDP growth. The latter was greater when accompanied by a high physical asset value to GDP, e.g., an elevated property market.

• Advanced Composite Materials
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• 제16권3호
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• pp.195-206
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• 2007

Carbon nanofiber (CNF)/unsaturated polyester resin (UPR) was prepared by a solvent evaporation method, and the temperature dependency of electrical conductivity was investigated. The CNF/UPR composites had quite a low percolation threshold due to CNF having a larger aspect ratio and being well dispersed in the UPR matrix. The positive temperature coefficient (PTC) was found in the CNF/UPR composites and it showed stronger effect around the percolation threshold. The electrical resistance of the CNF/UPR composites decreased and had lower temperature dependency with increasing numbers of thermal cycles.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권3호
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• pp.331-338
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• 2014

A charge-pump circuit using a current-bypass technique, which suppresses charge sharing and reduces the sub-threshold currents, helps to decrease phase-locked loop (PLL) jitter without resorting to a feedback amplifier. The PLL shows no stability issues and no power-up problems, which may occur when a feedback amplifier is used. The PLL is implemented in 0.11-${\mu}m$ CMOS technology to achieve 0.856-ps RMS and 8.75-ps peak-to-peak jitter, which is almost independent of ambient temperature while consuming 4 mW from a 1.2-V supply.

• Transactions on Electrical and Electronic Materials
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• 제18권1호
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• pp.51-54
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• 2017

TFTs (thin film transistors) were fabricated using a-SIZO (amorphous silicon-indium-zinc-oxide) channel by RF (radio frequency) magnetron sputtering at room temperature. We report the influence of various channel thickness on the electrical performances of a-SIZO TFTs and their stability, using TS (temperature stress) and NBTS (negative bias temperature stress). Channel thickness was controlled by changing the deposition time. As the channel thickness increased, the threshold voltage ($V_{TH}$) of a-SIZO changed to the negative direction, from 1.3 to -2.4 V. This is mainly due to the increase of carrier concentration. During TS and NBTS, the threshold voltage shift (${\Delta}V_{TH}$) increased steadily, with increasing channel thickness. These results can be explained by the total trap density ($N_T$) increase due to the increase of bulk trap density ($N_{Bulk}$) in a-SIZO channel layer.

• 대한수학회지
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• 제46권1호
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• pp.71-82
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• 2009

In this paper, a stage-structured predator-prey system with impulsive perturbations and time delays is presented to investigate the ecological problem of how a pest population and natural enemy population can coexist. Sufficient conditions are obtained using a discrete dynamical system determined by a stroboscopic map, which guarantee that a 'predator-extinction' periodic solution is globally attractive. When the impulsive period is longer than some time threshold or the impulsive harvesting rate is below a control threshold, the system is permanent. Our results provide some reasonable suggestions for pest management.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• 제22권1호
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• pp.29-62
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• 2018

We investigate a class of HIV infection models with two kinds of target cells: $CD4^+$ T cells and macrophages. We incorporate three distributed time delays into the models. Moreover, we consider the effect of humoral immunity on the dynamical behavior of the HIV. The viruses are produced from four types of infected cells: short-lived infected $CD4^+$T cells, long-lived chronically infected $CD4^+$T cells, short-lived infected macrophages and long-lived chronically infected macrophages. The drug efficacy is assumed to be different for the two types of target cells. The HIV-target incidence rate is given by bilinear and saturation functional response while, for the third model, both HIV-target incidence rate and neutralization rate of viruses are given by nonlinear general functions. We show that the solutions of the proposed models are nonnegative and ultimately bounded. We derive two threshold parameters which fully determine the positivity and stability of the three steady states of the models. Using Lyapunov functionals, we established the global stability of the steady states of the models. The theoretical results are confirmed by numerical simulations.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제6권1호
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• pp.270-286
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• 2012

In this paper, we propose a novel routing protocol called the Cartography Enhanced OLSR (CE-OLSR) for multi hop mobile ad hoc networks (multi hop MANETs). CE-OLSR is based on an efficient cartography gathering scheme and a stability routing approach. The cartography gathering scheme is non intrusive and uses the exact OLSR reduced signaling traffic, but in a more elegant and efficient way to improve responsiveness to the network dynamics. This cartography is a much richer and accurate view than the mere network topology gathered and used by OLSR. The stability routing approach uses a reduced view of the collected cartography that only includes links not exceeding a certain distance threshold and do not cross obstacles. In urban environments, IEEE 802.11 radio signals undergo severe radio shadowing and fading effects and may be completely obstructed by obstacles such as buildings. Extensive simulations are conducted to study the performances of CE-OLSR and compare them with those of OLSR. We show that CE-OLSR greatly outperforms OLSR in delivering a high percentage of route validity, a much higher throughput and a much lower average delay. In particular the extremely low average delay exacerbated by CE-OLSR makes it a viable candidate for the transport of real time data traffic in multi hop MANETs.