• Electrical & Electronic Materials
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• v.10 no.5
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• pp.425-433
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• 1997

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 82$0^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0$\times$10$^{-6}$ and 2.3$\times$10$^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785$^{\circ}C$. Whereas, PO$_3$dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$_{c}$(onset) of about 90 K and T$_{c}$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$was observed in all of the obtained films.lms.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.7
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• pp.974-979
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• 2013

$TiO_2$ thin films are fabricated using R.F.sputtering method. $TiO_2$ thin films are coated on $Al_2O_3$ substrate printed IDE(interdigitated electrode). Impedance of thin films decreases according to increase relative humidity and it increases according to decrease measuring frequency. When substrate temperature is room temperature, impedance of thin films is from 45.68[MHz] to 37.76[MHz] within the limits from 30[%RH] to 75[%RH] at 1[kHz]. Whereas when substrate temperature is 100[$^{\circ}C$], impedance of thin films is from 692[kHz] to 539[kHz] within the limits from 30[%RH] to 75[%RH] at 1[kHz]. Impedance variation of thin films is bigger in low frequency regions than in high frequency regions. When substrate temperature is 100[$^{\circ}C$], impedance of thin films is lower than that of room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1001-1004
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• 2001

The (Sr$_{l-x}$Ca$_{x}$)TiO$_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO$_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. The dielectric constant was increased -with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. The current-voltage characteristics of SCT15 thin films showed the increasing leakage current as the measuring temperature increases.ses.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.977-982
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• 2005

Al/AlN/n-type 6H-SiC (0001) MIS structures were prepared by AlN layers on vicinal 6H-SiC(0001) substrates with reactive RF magnetron sputtering method. The AlN films were annealed at $900^{\circ}C$, $N_2$ atmosphere lot 1 minutes showed the best result. With XRD analysis, AlN(0002) peak was clearly found. The typical dielectric constant value of the AlN film in the MIS capacitors was obtained as 8.4 from photo C-V. Also, the gate leakage current density of the MlS capacitor was $10^{-10}\;A/cm^2$ order within the electric field of 1.8 MV/cm. Finally, the amount of interface trap densities, $D_{it}$, was evaluated as $5.3\times10^{10}\;eV^{-1}cm^{-2}$ at (Ec-0.85) eV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.1029-1034
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• 2003

The Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{x}$, superconducting thin films arc fabricated by using the sputtering and evaporation method. Because we confirmed the sticking ratio of Bi element in the Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{x}$ superconducting thin film fabricated by using the sputtering method was much lower than the expected value, to get the enough number of the flakes of Bi, faraday cup was used to evaporate Bi clement. As a result of the fabrication, Bi 2201 and Bi 2212 single phases could be made by the optima of deposition condition. And we confirmed the sticking coefficient of Bi element was clearly related to the temperature change of the substrate and the generation of Bi22l2 phase

• Transactions on Electrical and Electronic Materials
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• v.11 no.1
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• pp.29-32
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• 2010

In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on a glass substrate by an radio frequency (RF) magnetron sputtering method using a 150-nm-thick AZO target (Al: 2 wt.%) at room temperature. We investigated the effects of RF power between 100-350 W (in steps of 50 W) on the structural, electrical, and optical properties of the AZO films. The thickness and cross-sectional images of the films were observed by field emission scanning electron microscopy. The thicknesses of all films were kept constant at 150 nm and grown on a glass substrate. The grain sizes of the AZO films were determined with the X-ray diffraction by using the Scherrer' equation, and their electrical properties were investigated using a Hall effect electronic transport measurement system. The transmittance of the AZO films was also measured by an ultraviolet-visible spectrometer.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.440-446
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• 2009

Indium tin oxide(ITO) substrate is one of the key components of the touch panel and its sputtering process is dependent on the characteristics of various touch panel, such as driving type, size of panel, and the intended use. In this study, we optimized the sputtering condition of ITO film on polycarbonate(PC) by using in-line sputtering method for the application to resistive type touch panel. We varied the $O_2$/Ar gas ratio, sputtering power, pressure and moving speed of substrate to deposit ITO films at room temperature with the base vacuum of $1{\times}10^{-6}\;torr$. The sheet resistance and its uniformity, the transmittance, the thickness of the ITO film on PC substrate are investigated and analyzed. The optimized process parameters are as follows : the sheet resistance is $500{\pm}50\;{\Omega}$/□, the uniformity of sheet resistance is lower than 10%, the transmittance is higher than 87 % at 550nm, and the thickness is about 120~250. The optimized deposition conditions by in-line sputtering method can be applied to the actual mass production for the ITO film manufacturing technology.

• Corrosion Science and Technology
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• v.10 no.2
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• pp.65-70
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• 2011

DLC is considered as the candidate material for application of moving parts in automotive components relatively in high pressure and temperature operating conditions for its high hardness with self lubrication and chemical inertness. The properties of interlayer between the substrate and the DLC film were studied. Arc ion plating method have been employed to deposit onto substrate and sputtering method was used for synthesizing DLC onto interlayer. Among these six types of interlayer, deposited DLC film onto TiCN showed excellent value for characteristics. From the results of analysis for physical properties of DLC films, it seems that the adhesion forces were more important factors than intrinsic mechanical properties such as hardness, roughness and wear resistance of DLC films. AFM(Atomic Force Microscope) was used for understanding roughness of DLC films. Hardnesses of the coating layers were identified by nano-indentation method and adhesions were checked by scratch method.

• Current Photovoltaic Research
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• v.8 no.1
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• pp.27-32
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• 2020

CuS thin films were deposited on glass substrates at room temperature by RF magnetron sputtering. The structural and optical properties of CuS thin films grown by varying RF-power from 40 W to 100 W were studied. From the XRD analysis, we confirmed hexagonal crystal structures grown in the preferred orientation of the (110) plane in all CuS thin films, and the intensity of the main diffraction peak increased in proportion to the increase of RF-power. In the case of CuS thin film deposited at 40W, small-sized particles formed a thin and dense surface morphology with narrow pore spacing, relatively. As the power increased, the grain size and grain boundary spacing increased sequentially. The peaks for the binding energy of Cu 2p_3/2 and Cu 2p_1/2 were determined at 932.1 eV and 952.0 eV, respectively. The difference in binding energy for the Cu²⁺ states was the same at 19.9 eV regardless of process parameters. The transmittance and band gap energy in the visible region tended to decrease with increasing sputtering powers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.164-169
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• 2013

The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing UV LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The $Mg_xZn_{1-x}O$ thin films have sufficient crystallinity on the high ZnO power. The EDS analyzed showed that the Mg content in the $Mg_xZn_{1-x}O$ films decreased from 3.99 to 24.27 at.% as the RF power of ZnO target increased. The Mg content in the $Mg_xZn_{1-x}O$ films could be controlled by co-sputtering power.