Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Structural Characteristics of MgxZn1-xO Thin Films with Sputtering Power by Co-sputtering Method

Co-sputtering법으로 제작된 MgxZn1-xO 박막의 인가 파워에 따른 구조적 특성

  • Kim, Sang Hyun (Division of Electrical and Electronics Engineering, Korea Maritime University) ;
  • Son, Jihoon (DRAM Development Division, SK Hynix) ;
  • Jang, Nakwon (Division of Electrical and Electronics Engineering, Korea Maritime University) ;
  • Kim, Hong Seong (Department of Nano Semiconductor Engineering, Korea Maritime University) ;
  • Yun, Young (Department of Radio Communication Engineering, Korea Maritime University)
  • 김상현 (한국해양대학교 전기전자공학부) ;
  • 손지훈 (SK 하이닉스 DRAM 개발본부) ;
  • 장낙원 (한국해양대학교 전기전자공학부) ;
  • 김홍승 (한국해양대학교 나노반도체공학과) ;
  • 윤영 (한국해양대학교 전파공학과)
  • Received : 2012.10.19
  • Accepted : 2013.01.04
  • Published : 2013.02.01
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Abstract

The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing UV LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The $Mg_xZn_{1-x}O$ thin films have sufficient crystallinity on the high ZnO power. The EDS analyzed showed that the Mg content in the $Mg_xZn_{1-x}O$ films decreased from 3.99 to 24.27 at.% as the RF power of ZnO target increased. The Mg content in the $Mg_xZn_{1-x}O$ films could be controlled by co-sputtering power.

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References

  1. IMO, International Convention for the Control and Managements of Ship's Ballast Water and Sediments, 2004 (BWM/CONF/36, 2004)
  2. G. S. Kil, S. K. Choi, D. W. Park, S. W. Kim, and S. G. Cheon, Journal of the Korean Society of Marine Engineering, 33, 959 (2009). https://doi.org/10.5916/jkosme.2009.33.6.959
  3. D. J. Jones, R. H. French, H. Mullejans, S. Loughin, A. D. Dorneich, and P. F. Carcia, J. Mater. Res., 14, (1999).
  4. F. C. Lin, Y. Takao, Y. Shimizu, and M. Egashira, J. An. Ceramic Society, 78, 2301 (1995). https://doi.org/10.1111/j.1151-2916.1995.tb08661.x
  5. M. H. Francombe and S. V. Krishnaswamy, J. Vac. Sci. Technol., A8, 1382 (1990).
  6. M. S. Wu. A. Azuma, T. Shiosaki, and Kawavata, Ferroelectrics. Freq. Control, 36, 442 (1989). https://doi.org/10.1109/58.31781
  7. Y. R. Ryu, S. Zhu, D. C. Look, J. M. Wrobel, H. M. Joeng, and H. W. White, J. Cryst. Growth, 216, 330 (2000). https://doi.org/10.1016/S0022-0248(00)00437-1
  8. E. Oh, M. Park, S. Kang, H. Cho, B. Koo, M. Yoo, H. Song and T. Kim, J. Cryst. Growth, 189, 537 (1998). https://doi.org/10.1016/S0022-0248(98)00308-X
  9. S. Sadofev, S. Blumstengel, J. Cui, J. Puls, S. Rogaschewski, P. Schafer, Yu. G. Sadofyev, and F. Henneberger, Appl. Phys. Lett., 87, 091903 (2005). https://doi.org/10.1063/1.2034113