• Title/Summary/Keyword: Spin-coating method

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증발을 고려한 Wafer Spin Coating 박막 예측에 관한 수치 해석적 연구

  • 노영미;임익태;김광선
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2002.11a
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    • pp.20-26
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    • 2002
  • The fluid flow, mass transfer, heat transfer and film thickness variation during the spin coating process are numerically studied. The model is said to be 1-dimensional because radial variations in film thickness, concentration and temperature are ignored. The finite difference method is employed to solve the equations that are simplified using the similarity transformation. In early time film thinning is due to the radial convective outflow. However that slows during the first seconds of spinning so the film thinning due to evaporation of solvent becomes sole. The time various film thickness is analyzed according to the var ious solvent fraction in the coating liquid and in the bulk of the overlying gas and the temperature variation in the liquid film during the spin coating is estimated.

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Protein Adsorption on the Nickel-coated Glass Slide for Protein Chips

  • Hyun, June-Won;Kim, Shi-Yong;Lee, Sang-Hee;Park, Heon-Yong;Pyee, Jae-Ho;Kim, Sung-Hoon
    • Bulletin of the Korean Chemical Society
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    • v.23 no.12
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    • pp.1724-1728
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    • 2002
  • The adsorption of proteins on the surface of glass slides is essential for the construction of protein chips. Here, we report that a Histidine (His)-tagged protein protein has been efficiently adsorbed on glass coated with nickel. A variety of nickel chloride-coated plates were prepared by the spin-coating method and adsorbed to the His-tagged protein. When the protein was adsorbed onto the surface of a variety of nickel chloride-coated glass slides, the efficiency of protein adsorption was dependent upon the coating conditions such as nickel chloride concentration, the spin speed and the drying temperature. The slides appropriate for protein adsorption were obtained when the slides were coated with 11%(w/w) of $NiCl_2$ at the spin speed of 4000 rpm for 20 sec and then dried at higher than 40°C. The physical properties of their nickel chloride thin layer were characterized by scanning electron microscopy. x-ray diffraction and atomic force microscopy, finding that the nickel chloride particles were around 10 nm in diameter and uniformly crystallized at 101 faces. These results show that nickel chloride-coated slides prepared by the spin-coating method are utilizable for the construction of Histagged protein chips.

Photocatalytic Efficiency of $TiO_2$Thin Films by Spin-coating (Spin-coating법에 의한 $TiO_2$의 광촉매 효율)

  • Kim, Beom-Jun;Byeon, Dong-Jin;Lee, Jung-Gi;Park, Dal-Geun
    • Korean Journal of Materials Research
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    • v.10 no.4
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    • pp.264-269
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    • 2000
  • TiO$_2$thin films were prepared on the glass by a conventional spin coating method with $TiO_2$ sol(30wt%, anatase). The thickness of the thin films were controlled by the number of coating cycles: one cycle is composed of spin coating, drying, and heating process. The reaction rate of the film was obtained by the photodecomposition of gaseous benzene under 0.44 and 2.0mW/$\textrm{cm}^2$ UV light on the film surface. For an incident UV light intensity of 0.44mW/$\textrm{cm}^2$, the reaction rate was increased with the thickness of the film, caused by extent of surface area, but there was no change over the thickness of about 4$\mu\textrm{m}$. The porous $TiO_2$ thin film has comparatively vast effective surface area, which under relatively high-intensity UV illumination causes the reaction rate to be controlled by the film thickness.

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NH3 sensing properties of porous CuBr films prepared by spin-coating (스핀 코팅법으로 제작한 다공성 CuBr 필름의 암모니아 감응특성)

  • Kim, Sang-Kwon;Yu, Byeong-Hun;Yoon, Ji-Wook
    • Journal of Sensor Science and Technology
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    • v.30 no.6
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    • pp.451-455
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    • 2021
  • Porous copper bromide (CuBr) films are highly advantageous for detecting ammonia (NH3). The fabrication of porous CuBr films requires complex high-temperature processes or multistep processes. Herein, we report the uncomplicated preparation of porous CuBr films by a spin-coating method and the films' excellent NH3 sensing properties. The porous films were prepared by spin-coating 100, 150, and 200 mM CuBr solutions, and then dried in a vacuum oven for 2 h. All the films showed a high NH3 response; in particular, the film prepared using a 100 mM CuBr solution showed an extremely high response (resistance ratio = 852) to 5 ppm NH3. The film also showed fast response and recovery times, 272 s and 10 s respectively, even at room temperature. The outstanding NH3 sensing characteristics were explained in relation to the porosity and thickness of the prepared films. The high-performance NH3 sensors used in this study can be used for both indoor air quality and environmental monitoring applications.

Efficiency enhancement of spray QD solar cells

  • Park, Dasom;Lee, Wonseok;Jang, Jinwoong;Yim, Sanggyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.420.1-420.1
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    • 2016
  • Colloidal quantum dot (CQD) is emerging as a promising active material for next-generation solar cell applications because of its inexpensive and solution-processable characteristics as well as unique properties such as a tunable band-gap due to the quantum-size effect and multiple exciton generation. However, the most widely used spin-coating method for the formation of the quantum dot (QD) active layers is generally hard to be adopted for high productivity and large-area process. Instead, the spray-coating technique may potentially be utilized for high-throughput production of the CQD solar cells (CQDSCs) because it can be adapted to continuous process and large-area deposition on various substrates although the cell efficiency is still lower than that of the devices fabricated with spin-coating method. In this work, we observed that the subsequent treatment of two different ligands, halide ion and butanedithiol, on the lead sulfide (PbS) QD layer significantly enhanced the cell efficiency of the spray CQDSCs. The maximum power conversion efficiency was 5.3%, comparable to that of the spin-coating CQDSCs.

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Characterization of F- and Al-codoped ZnO Transparent Conducting Thin Film prepared by Sol-Gel Spin Coating Method

  • Nam, Gil Mo;Kwon, Myoung Seok
    • Journal of the Korean Ceramic Society
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    • v.53 no.3
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    • pp.338-342
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    • 2016
  • ZnO thin film co-doped with F and Al was prepared on a glass substrate via simple non-alkoxide sol-gel spin coating. For a fixed F concentration, the addition of Al co-dopant was shown to reduce the resistivity mainly due to an increase in electrical carrier density compared with ZnO doped with F only, especially after the second post-heat-treatment in a reducing environment. There was no effective positive contribution to the reduction in resistivity due to the mobility enhancement by the addition of Al co-dopant. Optical transmittance of the ZnO thin film co-doped with F and Al in the visible light domain was shown to be higher than that of the ZnO thin film doped with F only.

Gas sensing properties of $In_{2}O_{3}$ thin film prepared by spin-coating method (스핀 코팅에 의한 $In_{2}O_{3}$ 박막의 가스감지특성)

  • Chung, Wan-Young;Lim, Jun-Woo;Lee, Duk-Dong;Yamazoe, Noboru
    • Journal of Sensor Science and Technology
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    • v.7 no.2
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    • pp.117-123
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    • 1998
  • The $In_{2}O_{3}$ thin films were fabricated on a alumina substrate by spin-coating method and the gas sensing properties were tested. The coating solution was synthesized by the mixing of aqueous solution of $In(OH)_{3}$ and acetic acid, and ammonium carboxymethyl cellulose as a binder. The $In_{2}O_{3}$ thin films between 71 and 210nm thick were obtained by spin-coating between 1 and 7 times followed by drying at $110^{\circ}C$ and calcining at $600^{\circ}C$. The films consisted of a dense stack of tiny $In_{2}O_{3}$ particles between 23 and 27nm in diameter and covered well large grains of the alumina substrate. Then film thickness was well controlled by the number of spin-coating. The fabricated $In_{2}O_{3}$ films showed high sensitivity and very fast response property to CO and $H_{2}$.

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Investigation on the polystyrene surface coating method of graphene oxide (산화그래핀(GO)의 플라스틱(PS) 표면 코팅방법에 대한 연구)

  • Park, Jaebum;Lee, Jihoon;Huh, Jeung Soo;Park, Danbi;Lim, Jeong Ok
    • Journal of the Korean institute of surface engineering
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    • v.54 no.2
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    • pp.77-83
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    • 2021
  • In this study, we investigated various coating methods of graphene oxide on the surface of a petri dish made of polystyrene and analyzed the physical and chemical properties of the coated surface. For coating, spinning, spraying and pressing methods were attempted. The coated surface was characterized by SEM, Raman Spectroscopy, AFM, FT-IR, UV-Vis Spectroscopy and Contact Angle measurement. By spin coating and spray coating, well distributed graphene oxide in the form of multiple islands on the plastic surface with an average size of 5 to 20㎛ are observed by SEM, and high binding energy between graphene oxide and plastic surface is measured by AFM. In case of hand press coating, graphene oxide of 10㎛ or more was observed, and low surface energy was measured. By FT-IR and Raman Spectroscopy analysis, surface coating of graphene oxide was confirmed.

Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor

  • Dao, Tung Duy;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
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    • v.35 no.11
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    • pp.3299-3302
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    • 2014
  • The In2S3 thin films of tetragonal structure and In2O3 films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ($[(Et)_3NH]^+[In(SCOCH_3)_4]^-$; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide ($SiO_2$) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of $10.1cm^2V^{-1}s^{-1}$ at a curing temperature of $500^{\circ}C$, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.