• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.479-484
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• 2011

In this paper, investigations of thick film $La_{0.75}Sr_{0.25}Ga_{0.8}Mg_{0.16}Fe_{0.04}O_{3-{\delta}}$ (LSGMF) cells fabricated via spin coating on either NiO-YSZ anode or $La_{0.7}Sr_{0.3}Ga_{0.6}Fe_{0.4}O_3$ (LSGF) cathode substrates are presented. A La-doped $CeO_2$ (LDC) layer is inserted between NiO-YSZ and LSGMF in order to prevent reactions from occurring during co-firing. For the LSGF cathode-supported cell, no interlayer was required because the components of the cathode are the same as those of LSGMF with the exception of Mg. An LSGMF electrolyte slurry was deposited homogeneously on the porous supports via spin coating. The current-voltage characteristics of the anode and cathode supported LSGMF cells at temperatures between $700^{\circ}C$ and $850^{\circ}C$ are described. The LSGF cathode supported cell demonstrates a theoretical OCV and a power density of ~420 mW $cm^2$ at $800^{\circ}C$, whereas the NiO-YSZ anode supported cell with the LDC interlayer demonstrates a maximum power density of ~350 mW $cm^2$ at $800^{\circ}C$, which decreased more rapidly than the cathode supported cell despite the presence of the LDC interlayer. Potential causes of the degradation at temperatures over $700^{\circ}C$ are also discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.691-696
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• 2004

The electronic state and chemical bonding of $\beta$-MnO$_2$ with transition metal dopants were theoretically investigated by DV-X$_{\alpha}$ (the discrete variational X$_{\alpha}$) method, which is a sort of the first principles molecular orbital method using the Hartree-Fock-Slater approximation. The calculations were performed with a $_Mn_{14}$ MO$_{56}$ )$^{-52}$ (M = transition metals) cluster model. The electron energy level, the density of states (DOS), the overlap population, the charge density distribution, and the net charges, were calculated. The energy level diagram of MnO$_2$ shows the different band structure and electron occupancy between the up spin states and down spin states. The dopant levels decrease between the conduction band and the valence band with the increase of the atomic number of dopants. The covalency of chemical bonding was shown to increase and ionicity decreased in increasing the atomic number of dopants. Calculated results were discussed on the basis of the interaction between transition metal 3d and oxygen 2p orbital. In conclusion it is expected that when the transition metals are added to MnO$_2$ the band gap decreases and the electronic conductivity increases with the increase of the atomic number of dopants. the atomic number of dopants.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.13-13
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• 2010

Switching an elementary excitation by injecting a single carrier would offer the exciting opportunity for the ultra-high data storage technologies. However, there has been no methodology available to investigate the interaction of low energy discrete carriers with nano-structures. In order to map out the spatial dependency of such single carrier level interactions, we developed a pulse-and-probe algorithm, combining with low temperature scanning tunneling microscopy. The new tool, which we call single carrier spectroscopy, allows us to track the interaction with the target macrostructure with tunneling carriers on a single carrier basis. Using this tool, we demonstrate that it is possible not only to locally write and erase individual bi-solitons, reliably and reversibly, but also to track of creation yields of single and multiple bi-solitons. Bi-solitons are pairs of solitons that are elementary out-of-phase excitations on anti-ferromagnetically ordered pseudo-spin system of Si dimers on Si(001)-c(42) surfaces. We found that at low energy tunneling the single bisoliton creation mechanism is not correlated with the number of carriers tunneling, but with the production of a potential hole under the tip. An electric field at the surface determines the density of the local charge density under the tip, and band-bending. However a rapid, dynamic change of a field produces a potential hole that can be filled by energetic carriers, and the amount of energy released during filling process is responsible for the creation of bi-solitons. Our model based on the field-induced local hole gives excellent explanation for bi-soliton yield behaviors. Scanning tunneling spectroscopy data supports the existence of such a potential hole. The mechanism also explains the site-dependency of bi-soliton yields, which is highest at the trough, not on the dimer rows. Our study demonstrates that we can manipulate not just single atoms and molecules, but also single pseudo-spin excitations as well.

• New Physics: Sae Mulli
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• v.68 no.12
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• pp.1288-1292
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• 2018

Using density functional theory calculations, we study the Schottky barrier (SB) change in a two-dimensional (2D) lateral heterostructure consisting of semiconducting $2H-MoS_2$ and the ferromagnetic metal $2H-VS_2$ by applying a uniaxial tensile strain from 0% to 10%. We find that the SB for holes is much smaller than that for electrons and that SB height decreases monotonically under increasing tensile strain. In particular, we find that a critical strain where the spin-up SB for holes is abruptly reduced to zero exists near a strain of 8%, implying that only the spin-up holes are allowed to flow through the $MoS_2-VS_2$ lateral heterostructure. Our results provide fundamental information and can be utilized to guide the design of 2D lateral heterostructure-based novel rectifying devices by using strain engineering.

• Journal of the Korean Magnetics Society
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• v.16 no.4
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• pp.193-196
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• 2006

The magnetic properties of Ni nanowires consisting of one to four atoms are investigated by mean of ab initio spin-polarized density functional calculations. Stability of zigzag-square $Ni_4$ nanowire is larger than $Ni_4$ nanowires with square. The magnetic moment of linear $Ni_1$ is $1.34{\mu_B}/atom$, which is the largest magnitude among moments of five Ni nanowires. The magnetic moment of Ninanowires show to be decreased by increasing the number of atoms in unit cell. The smallest moment is $0.91 {\mu_B}/atom$ for square $Ni_4$ nanowire. The spin polarization of zigzag-square $Ni_4$ nanowire is 32% higher than that of fcc bulk Ni.

• Journal of the military operations research society of Korea
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• v.3 no.1
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• pp.83-96
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• 1977

The combustion chamber and nozzle of an end burning, small spherical rocket is designed. A spherical external shape has a number of advantages such as fixed center-of-gravity and minimum aerodynamic precession torques during flight and a better mass distribution for gyro-stabilization as contrasted to a conventional ogive rocket shape. It is shown that the cross-sectional variation of the end burning solid propellant with length is an exponential geometry to provide a constant thrust-weight ratio of the rocket device during the propellant burning period, and that the factors which affect the attainment of the constant relationship of thrust to weight in the design are the initial propellant area, initial weight of the rocket and propellant density. The measurement of the transient thrust in the ground static test using black powder propellant supports the predicted results. A wind tunnel having a $30{\times}30{\times}75cm$ test section and Mach number 0.11 is constructed, and a simple balance-type device is designed for the measurement of the drag of a spinning sphere. The experimental results indicate that the. spinning has no effect on the magnitude of the drag up to the Reynolds number $3{\times}10^5$. Numerical computation of the flight trajectories for various launching angles is presented, and the gyro-stabilization of spinning sphere is discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.385-385
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• 2012

A two terminal N+/P/N+ junction device to replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque (STT) MRAM based on 3D device simulation. An N+/P/N+ junction structure with $30{\times}30nm$ area requires bi-directional current flow enough to write a data by a drain induced barrier lowering (DIBL) under a reverse bias at N+/P (or P/N+ junction), and high current on/off ratio of 106. The SiGe materials are widely used in hetero-junction bipolar transistors, bipolar compensation metal-oxide semiconductors (BiCMOS) since the band gap of SiGe materials can be controlled by changing the fraction and the strain epilayers, and the drift mobility is increased with the increasing Ge content. In this work, N+/P/N+ SiGe material based junction provides that drive current is increased from 40 to $130{\mu}A$ by increased Ge content from 10~80%. When Ge content is about 20%, the drive current density of SiGe device substantially increased to 2~3 times better than Si-based junction device in case of 28 nm P length, which is sufficient current to operation of STT-MRAM.

• Journal of Magnetics
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• v.13 no.4
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• pp.124-127
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• 2008

The magnetic and electronic properties of Ni impurity in bcc Fe ($Ni_1Fe_{26}$) are investigated using the full potential linearized augmented plane wave (FLAPW) method based the generalized gradient approximation (GGA). We found that the Ni impurity in bcc Fe increases both the lattice constant and the magnetic moment of bcc Fe. The calculated equilibrium lattice constant of $Ni_1Fe_{26}$ in the ferromagnetic state was 2.84 A, which is slightly larger than that of bcc Fe (2.83 ${\AA}$). The averaged magnetic moment per atom of $Ni_1Fe_{26}$ unit cell was calculated to be $2.24{\mu}_B$, which is greater than that of bcc Fe (2.17 ${\mu}_B$). The enhancement of magnetic moment of $Ni_1Fe_{26}$ is mainly contributed by the nearest neighbor Fe atom of Ni, i.e., Fe1, and this can be explained by the spin flip of Fe1 d states. The density of states shows that Ni impurity forms a virtual bound state (VBS), which is contributed by Ni $e_{g{\downarrow}}$ states. We suggest that the VBS caused by the Ni impurity is responsible for the spin flip of Fe1 d states.

• Journal of the Korean Magnetics Society
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• v.2 no.1
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• pp.50-55
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• 1992

Numerical method for analyzing the reading process in magnetic recording system is described. Hysteresis characteristics must be included in numerical analysis not only recording process but also reading process because of hysteretic behavior of recording media. Algorithm which is consisted of finite clement method for numerical analysis and Preisach model considered to be more appropriate method than Stoner-Wohlfarth model with spin curling mode for describing hysteresis characteristics is constructed. Equations to calculate waveform of reproduced voltage is proposed. Then, this is applied to perpendicular magnetic recording systems with pole type head and double layer media. Waveform of magnetic flux density and reproduced voltage induced in head coil is obtained. If the recording current increase in recording process, magnitude of reproduced voltage in reproducing process saturates. From this saturation curve, value of current which produce maximum voltage can be obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.5
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• pp.411-416
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• 2006

A new reading technology for the ultra-high density data storage device utilizing AFM technology was proposed and its experimental results were discussed in this paper. For the experiments, an about $2{\mu}m$ thick conductive polymer layer was spin-coated on the heavily doped n-type Si wafer and an about $0.1{\mu}m$ thick PMMA layer was also been spin-coated on it. After then, the $5{\times}5$ memory way was fabricated by making indents on the surface of the wafer with the heated AFM tip, and the data reading was performed by scanning the surface with the tip biased at 10 V and the measuring the current flowing out at the end of the tip. The experimental results clearly showed that the new data reading technology worked superbly. The current measured was about 0.92 pA at the cell with the indent, and it was not only below 0.31 pA at the cell without the indent, but also at the cell where the indent was erased.