• Title/Summary/Keyword: Space charge layer

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Characteristics of Electrical Conduction Mechanism of OLED with Various Temperature (유기 발광 다이오드의 온도에 따른 전도특성)

  • Lee, Dong-Gyu;Kim, Tae-Wan;Lee, Joon-Ung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.05a
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    • pp.197-200
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    • 2005
  • We have studied conduction mechanism that is interpreted in terms of space charge limited current (SCLC) region and tunneling region. The OLEDs are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris (8-hydroxyquinolinoline) aluminum(III) $(Alq_3)$ as an electron injection and transport and emitting layer. We manufactured reference structure that has in $ITO/TPD/Alq_3/Al$. Buffer layer effects were compared to reference structure. And we have analyzed out electrical conduction mechanism in $ITO/Alq_3/Al$ device with various temperature.

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Modeling on Structural Control of a Laminated Composite Plate with Piezoelectric Sensor/Actuators (압전재료를 이용한 복합적층판의 구조제어에 관한 모델링)

  • 황우석;황운봉;한경섭;박현철
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.17 no.1
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    • pp.90-100
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    • 1993
  • A finite element formulation of vibration control of a laminated plate with piezoelectric sensor/ actuators is presented. Classical lamination theory with the induced strain actuation and Hamilton's principle are used to formulate the equations of motion of the system. The total charge developed on the sensor layer is calculated from the direct piezoelectric equation. The equations of motion and the total charge are discretized with 4 node, 12 degrees of freedom quadrilateral plate bending elements with one electrical degree of freedom. The mass and stiffness of the piezoelectric layer are introduced by treating them as another layer in laminated plate. Piezoelectric sensor/actuators are distributed, but discrete due to the geometry of electrodes. By defining an i.d. number of electrode for each element, modelling of electrodes with variable geometry can be achieved. The static response of a piezoelectric bimorph beam to electrical loading and sensor voltage to given displacement are calculated. For a laminated plate under the negative velocity feedback control, the direct time response by the Newmark-.betha. method and damped frequencies and modal damping ratios by modal state space analysis are derived.

The CREAM Experiment in the International Space Station

  • Lee, Jik;Jeon, Jina;Lee, Hyun Su;Lee, Hye Young;Lim, Heuijin;Park, Il Hung;Roh, Youn;Kim, Hongjoo;Park, Hwanbae;Lee, Moo Hyun;Seo, Eun-Suk
    • The Bulletin of The Korean Astronomical Society
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    • v.37 no.2
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    • pp.206.1-206.1
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    • 2012
  • The NASA Antarctica balloon experiment CREAM has successfully collected the data of energetic cosmic rays during six flights in past years. It recently observed the unexpected discrete hardening in energy spectra of comic rays. However high-statistics data of energetic cosmic rays are required for the further investigation of the unexpected hardening in comic-ray energy spectra. The International Space Station (ISS) is an ideal platform for the CREAM experiment to investigate the unexpected hardening and explore the fundamental issues like the acceleration mechanism and the origin of energetic cosmic rays because of the high duty cycle of the experiment in the ISS platform. We will present the design of the ISS-CREAM experiment, and the development and fabrication status of the detector components including the 4-layer silicon charge detector which will measure the charge constitution of cosmic rays with unprecedented accuracy.

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Enhanced Electrical Properties of Light-emitting Electrochemical Cells Based on PEDOT:PSS incorporated Ruthenium(II) Complex as a Light-emitting layer

  • Gang, Yong-Su;Park, Seong-Hui;Lee, Hye-Hyeon;Jo, Yeong-Ran;Hwang, Jong-Won;Choe, Yeong-Seon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.139-139
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    • 2010
  • Ionic Transition Metal Complex based (iTMC) Light-emitting electrochemical cells (LEECs) have been drawn attention for cheap and easy-to-fabricate light-emitting device. LEEC is one of the promising candidate for next generation display and solid-state lighting applications which can cover the defects of current commercial OLEDs like complicated fabrication process and strong work-function dependent sturucture. We have investigated the performance characteristics of LEECs based on poly (3, 4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS)-incorporated transition metal complex, which is tris(2, 2'-bipyridyl)ruthenium(II) hexafluorophosphate in this study. There are advantages using conductive polymer-incorporated luminous layer to prevent light disturbance and absorbance while light-emitting process between light-emitting layer and transparent electrode like ITO. The devices were fabricated as sandwiched structure and light-emitting layer was deposited approximately 40nm thickness by spin coating and aluminum electrode was deposited using thermal evaporation process under the vacuum condition (10-3Pa). Current density and light intensity were measured using optical spectrometer, and surface morphology changes of the luminous layer were observed using XRD and AFM varying contents of PEDOT:PSS in the Ruthenium(II) complex solution. To observe enhanced ionic conductivity of PEDOT:PSS and luminous layer, space-charge-limited-currents model was introduced and it showed that the performances and stability of LEECs were improved. Main discussions are the followings. First, relationship between film thickness and performance characteristics of device was considered. Secondly, light-emitting behavior when PEDOT:PSS layer on the ITO, as a buffer, was introduced to iTMC LEECs. Finally, electrical properties including carrier mobility, current density-voltage, light intensity-voltage, response time and turn-on voltages were investigated.

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Analysis of Capacitance and Mobility of ZTO with Amorphous Structure (비정질구조의 ZTO 박막에서 커패시턴스와 이동도 분석)

  • Oh, Teresa
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.20 no.6
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    • pp.14-18
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    • 2019
  • The conductivity of a semiconductor is primarily determined by the carriers. To achieve higher conductivity, the number of carriers should be high, and an energy trap level is created so that the carriers can cross the forbidden zone with low energy. Carriers have a crystalline binding structure, and interfacial mismatching tends to make them less conductive. In general, high-concentration doping is typically used to increase mobility. However, higher conductivity is also observed in non-orthogonal conjugation structures. In this study, the phenomena of higher conductivity and higher mobility were observed with space charge limiting current due to tunneling phenomena, which are different from trapping phenomena. In an atypical structure, the number of carriers is low, the resistance is high, and the on/off characteristics of capacitances are improved, thus increasing the mobility. ZTO thin film improved the on/off characteristics of capacitances after heat treating at $150^{\circ}C$. In charging and discharging tests, there was a time difference in the charge and discharging shapes, there was no distinction between n and p type, and the bonding structure was amorphous, such as in the depletion layer. The amorphous bonding structure can be seen as a potential barrier, which is also a source of space charge limiting current and causes conduction as a result of tunneling. Thus, increased mobility was observed in the non-structured configuration, and the conductivity increased despite the reduction of carriers.

Can be the dielectric constant of thin films as-grown at room temperature higher than that of its bulk material?

  • Jung, Hyun-June;Kim, Chung-Soo;Lee, Jeong-Yong;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.23-23
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    • 2010
  • The $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO)-Bi composite films sandwiched by an $Al_2O_3$ protection layer exhibited a linear increase of a dielectric constant with increasing thickness and the 1000nm-thick BMNO-Bi composite films showed a dielectric constant (~220) higher than that of its bulk material (~210), keeping a low leakage current density of about $0.1{\mu}A/cm^2$. An enhancement of the dielectric constant in the BMNO-Bi composite films was attributed to the hybrid model combined by a space charge polarization, dipolar response, and nano-capacitors. On the other hand, 1000nm-thick BMNO-Bi composite films sandwiched by 40nm-thick BMNO layer exhibited a dielectric constant of about 450 at 100 kHz and a leakage current density of $0.1{\mu}A/cm^2$ at 6V.

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Flat Fluorescent Lamp with Good Uniformity for LCD Back-Light (훌륭한 휘도 균일도를 갖는 LCD 후면 광원용 평판 형광램프)

  • Kwon, Soon-Seok;Yoon, Geel-Joong
    • Journal of the Institute of Electronics Engineers of Korea TE
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    • v.37 no.1
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    • pp.12-17
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    • 2000
  • In this paper, the frequency characteristics of flat fluorescent lamp(FFL) using ultraviolet generated from gas discharge are studied. The lamp is a simple structure with insulator layer, phosphor layer, and gas gap(1.1mm). The firing voltage and uniform voltage was decreased with increasing the frequency. It was considered that this tendency was resulted from the space charge effect due to Xe and Ar positive ions trapped in gas gap. Luminance in FFL using Xe as discharge gas was shown 2700 cd/$m^2$ in operation (700 Vrms, 80 kHz). Hence, the maximum luminous efficiency was 5 lm/W.

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Degradation Mechanism of the ZnO-Varistor Fabricated with the content of a 3-Composition Seed grain (3-성분 종입자법으로 제조된 ZnO-Varistor의 열화기구)

  • 장경욱;박춘배;이준웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1992.05a
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    • pp.97-100
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    • 1992
  • The Degradation mechanism of the ZnO-varistor fabricated with the content of a 3-Composition seed grain is discussed using the method of Thermally Stimulated Current (TSC). The spectra of TSC is measured in the temperature range of -130~270$^{\circ}C$ with a various forming electric fields E$\sub$f/, temperature T$\sub$f/ time tf, and a various rising rate of temperature. It is observed that there are appeared the peaks of ${\alpha}$, ${\alpha}$$_2$, ${\beta}$ and ${\gamma}$from high temperature in a TSC spectrum. It seems that ${\alpha}$$_1$ peak is due to thermal depolarization of donor ions forming the space charge in the depletion layer, and ${\alpha}$$_2$peak is due to the detrapping of trapped electrons in deep trap level of intergranular layer, and ${\beta}$ peak is due to the thermal exciting of carrier existing in the donor level of grain itself, and ${\gamma}$ peak is due to the thermal exciting of trapped carrier in all shallow trap site randomly distributed in the inner of sample and/or a intrinsic impurity existing in it.

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Powder Type Electroluminescence Display with Good Uniformity for LCD Backlighting (LCD 후면 광원용으로 우수한 Uniformity를 갖는 분산형 EL)

  • Kwon, S.S.;Lim, M.S.;Lim, K.J.;Park, S.G.;Ryu, B.H.
    • Proceedings of the KIEE Conference
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    • 1998.11c
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    • pp.776-778
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    • 1998
  • Electrical and optical characteristics of Powder type EL display(P-ELD) in this study are described, In experimental results of V-J, current are increased with increasing the frequency and voltage. Luminance was increased with frequency. This is due to the positive space charge formed to cathode region. Lumiance at 150V, 20 kHz has $840\;cd/m^2$. This tendency is due to the decrease of capacitive reactance in insulator layer. Uniformity of P-ELD shows 97%. CIE chromaticity with increasing frequency are shifted toward blue color. It can be explained in tenn of the difference of recombination energy.

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Electrical Property of $BaTiO_3$ Ceramics(II) ($BaTiO_3$ 세라믹의 전기적성질(II))

  • 윤기현;송효일;윤상옥;이형복
    • Journal of the Korean Ceramic Society
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    • v.18 no.2
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    • pp.75-78
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    • 1981
  • The electrical conductivity of $(M_2O_3)_x (BaTiO_3)_{1-x}$ has been measured over the temperature range of 30 to 27$0^{\circ}C$. The substitution of rare earth oxide such as $La_2O_3$, $Nd_2O_3$, or $Dy_2O_3$ can be represented by $M_2O_3$. The additional mole fraction of the rare earth oxide is ranged over 0.0015 to 0.0030. The electrical conductivity exhibits an anomalous decrease near the tetragonal to cubic transition about 12$0^{\circ}C$. The decrease in the electrical conductivity is observed at the higher impurity concentrations owing to space charge layer. The increase in the electrical conductivity is observed as the impurity ion is varied from $La^{+3}$$Nd^{+3}$ to $Dy^{+3}$, due to overlap of 4f electrons of the inner shell.

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