• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.24-29
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• 2000

We propose a simple method to control the crystallization depth of amorphous silicon (a-Si) deposited by PECVD or LPCVD during the excimer laser annealing (ELA). Employing the new method, we have formed poly-Si/a-Si double film and fabricated a new poly-Si TFT with vertical a-Si offsets between the poly-Si channel and the source/drain of TFT without any additional photo-lithography process. The maximum leakage current of the new poly-Si TFT decreased about 80% due to the highly resistive vertical a-Si offsets which reduce the peak electric field in drain depletion region and suppress electron-hole pair generation. In ON state, current flows spreading down through broad a-Si cross-section in the vertical a-Si offsets and the current density in the drain depletion region where large electric field is applied is reduced. The stability of poly-Si TFT has been improved noticeably by suppressing trap state generation in drain region which is caused by high current density and large electric field. For example, ON current of the new TFT decreased only 7% at a stress condition where ON current of conventional TFT decreased 89%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.665-671
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• 2017

Herein, we report the fabrication of low-voltage N-type organic field-effect transistors by using high capacitance fluorinated polymer gate dielectrics such as P(VDF-TrFE), P(VDF-TrFE-CTFE), and P(VDF-TrFE-CFE). Electron-withdrawing functional groups in PVDF-based polymers typically cause the depletion of negative charge carriers and a high contact resistance in N-channel organic semiconductors. Therefore, we incorporated intermediate layers of a low-k polymerto prevent the formation of a direct interface between PVDF-based gate insulators and the semiconducting active layer. Consequently, electron depletion is inhibited, and the high charge resistance between the semiconductor and source/drain electrodes is remarkably improved by the in corporation of solution-processed charge injection layers.

• Journal of the Korean earth science society
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• v.24 no.5
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• pp.420-427
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• 2003

The results of recent studies indicate that atmospheric distribution of Hg in the arctic environment is unique enough to show strong depletion during spring followed by notable increases during summer. The observations of this abnormal trend contrast quite sharply with what had been recognized as Hg geochemical behavior in air over the past decades. Using the long-term measurement data of Hg obtained from both the Arctic and Korea, we attempted to provide valuable insights into the unique mercury depletion phenomenon (MDP) in the polar regions of the globe.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.173-181
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• 2005

A new two dimensional (2-D) model for the potential distribution of fully depleted short-channel ion-implanted silicon MESFET's has been presented in this paper. The solution of the 2-D Poisson's equation has been considered as the superposition of the solutions of 1-D Poisson's equation in the lateral direction and the 2-D homogeneous Laplace equation with suitable boundary conditions. The minimum bottom potential at the interface of the depletion region due to the metal-semiconductor junction at the Schottky gate and depletion region due to the substrate-channel junction has been used to investigate the drain-induced barrier lowering (DIBL) and its effects on the threshold voltage of the device. Numerical results have been presented for the potential distribution and threshold voltage for different parameters such as the channel length, drain-source voltage, and implanted-dose and silicon film thickness.

• Nuclear Engineering and Technology
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• v.51 no.1
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• pp.13-30
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• 2019

This paper presents the recent improvements in the DeCART code for HTGR analysis. A new 190-group DeCART cross-section library based on ENDF/B-VII.0 was generated using the KAERI library processing system for HTGR. Two methods for the eigen-mode adjoint flux calculation were implemented. An azimuthal angle discretization method based on the Gaussian quadrature was implemented to reduce the error from the azimuthal angle discretization. A two-level parallelization using MPI and OpenMP was adopted for massive parallel computations. A quadratic depletion solver was implemented to reduce the error involved in the Gd depletion. A module to generate equivalent group constants was implemented for the nodal codes. The capabilities of the DeCART code were improved for geometry handling including an approximate treatment of a cylindrical outer boundary, an explicit border model, the R-G-B checker-board model, and a super-cell model for a hexagonal geometry. The newly improved and implemented functionalities were verified against various numerical benchmarks such as OECD/MHTGR-350 benchmark phase III problems, two-dimensional high temperature gas cooled reactor benchmark problems derived from the MHTGR-350 reference design, and numerical benchmark problems based on the compact nuclear power source experiment by comparing the DeCART solutions with the Monte-Carlo reference solutions obtained using the McCARD code.

• Journal of Sensor Science and Technology
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• v.23 no.3
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• pp.185-191
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• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.

• Journal of Sensor Science and Technology
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• v.15 no.5
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• pp.341-346
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• 2006

We have fabricated SOI CMOS active pixel image sensor with the pinned photodiode on handle wafer in order to reduce dark currents and improve spectral response. The structure of the active pixel image sensor is 4 transistors APS which consists of a reset and source follower transistor on seed wafer, and is comprised of the photodiode, transfer gate, and floating diffusion on handle wafer. The source of dark current caused by the interface traps located on the surface of a photodiode is able to be eliminated, as we apply the pinned photodiode. The source of dark currents between shallow trench isolation and the depletion region of a photodiode can be also eliminated by the planner process of the hybrid bulk/SOI structure. The photodiode could be optimized for better spectral response because the process of a photodiode on handle wafer is independent of that of transistors on seed wafer. The dark current was about 6 pA at 3.3 V of floating diffusion voltage in the case of transfer gate TX = 0 V and TX=3.3 V, respectively. The spectral response of the pinned photodiode was observed flat in the wavelength range from green to red.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.586-586
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• 2012

The vuv spectrometer for ITER main plasma measurement is designed as a five-channel spectral system. To develop and verify the design, a two-channel prototype system was fabricated with No. 3 (14.4-31.8 nm) and No. 4 (29.0-60.0 nm) among the five channels. For test of the prototype system, a hollow cathode lamp is used as a light source. The system is composed of a collimating mirror to collect the light from source to slit, and two holographic diffraction gratings with toroidal geometry to diffract and also to collimate the light from the common slit to detectors. The overall system performance was verified by comparing the measured spectral resolutions with the calculated spectral resolutions. And we also have developed liquid jet target system. This study is about a neutron generator, which is designed to overcome many of the limitations of traditional beam-target neutron generators by utilizing a liquid target. One of the most critical aspects of the beam-target neutron generator is the target integrity under the beam exposure. A liquid target can be a good solution to overcome damage to the target such as target erosion and depletion of hydrogen isotopes in the active layer, especially for the ones operating at high neutron fluxes and maintained relatively thin with no need for water cooling. In this study, liquid target containing hydrogen has been developed and tested.

• Journal of Nutrition and Health
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• v.43 no.4
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• pp.351-356
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• 2010

This study was done to evaluate the effect of Ca source using fish (Tilapia mossambica) scales on the bone metabolism. Male Sprague-Dawley rats, 4 weeks of age, were fed low-calcium diet (0.15% Ca) for 2 weeks. The rats on the low-calcium diet were further assigned to one of following three groups for an additional 4 weeks: 1) Ca-depletion group (LoCa) given 0.15% Ca diet ($CaCO_3$), 2) Ca-repletion group (AdCa) given 0.5% Ca diet ($CaCO_3$), 3) Ca-repletion diet (AdFa) received 0.5% Ca diet (Ca source from Tilapia mossambica scales). Serum parathyroid (PTH) and calcitonin showed no differences among experimental groups. Whereas LoCa group elevated the turnover markers, serum ALP and osteocalcin, and urinary deoxypyridinoline (DPD), AdCa and AdFa groups reduced their values. Elevation in the femoral weight, ash and Ca contents was observed in AdCa and AdFa groups. Bone mineral density was increased in AdCa and AdFa groups by 25-26% compared with LoCa group. These data demonstrate that Ca repletion with either Ca source from Tilapia mossambica scales or $CaCO_3$ is similarly effective in the improvement of bone turnover markers and BMD, suggesting the usefulness of Tilapia mossambica scales in the prevention of bone loss compared with $CaCO_3$.

• Proceedings of the KIEE Conference
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• 2005.04a
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• pp.277-279
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• 2005

The imbalance of energy demand and supply caused by rapid industrialization around the world and the associated environmental issues require and alternative energy source with possible renewable fuels. Political instability and depletion of cruel oils are other factors that cause fluctuation of oil price. Securing a new alternative energy source for the next century became an urgent issue that our nation is confronting with. As a matter of fact, the fuel cell technology can be widely used as next generation energy regardless of regions and climate. Specially, the ability of expansion and quick installation enable one to apply it for distributed power, where the technology is already gaining remarkable attentions for the application. Particularly, leading industrialized nations are focusing on the PEM fuel dell with anticipation that this technology will find their place of applications in the vehicles and homes. In this study, demonstrate the multi physics modeling of a proton exchange membrane(PEM) fuel cell with interdigitated flow field design. The model uses current balances, mass balance(Maxwell-Stefan diffusion for reactant, water and nitrogen gas) and momentum balance(gas flow) to simulate the PEM fuel cell behavior.