• 한국세라믹학회지
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• 제14권3호
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• pp.187-192
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• 1977

For the purpose researching to the influence of tetrahedral and octahedral preference of cations of $Ni^{2+}$, $Ti^{4+}$ upon the formation and the color development of the $ZnO-SnO_2$ spinel containing $Ni^{2+}$ and $Ti^{4+}$ ions, the gradual substitution of $Ni^{2+}$ ions for $Zn^{2+}$ ions and of $Ti^{4+}$ ions for $Sn^{4+}$ ions of the spinel in NiO-ZnO-$SnO_2$-$TiO_2$ system was carried out. On samples prepared by calcining the oxide and basic cabonate mixtures at $1300^{\circ}C$ for 2 hours, the X-ray analysis, measurement of reflectance and the test of their stabilaity as a glaze pigment were also carried out. The results are summarized as follows 1) Single spinel was formed completely to x=1 in the $xNiO\cdot(2-x)ZnO\cdot{SnO}_2$system, and gave brilliant lightgreen hue. Moreover, $NiO\cdot{ZnO}\cdot{SnO}_2$ formed easily spinel than $NiO\cdot{MgO}\cdot{SnO}_2$ because Zn^{2+}$ ions had more strong tetrahedral preference than $Mg^{2+}$ ions. 2) As the gradual substitution of $Ti^{4+}$ ions for $Sn^{4+}$ ions in $NiO\cdot{MgO}\cdot{SnO}_2$ system, the spinels formed well and was nearly not changed in the hue. 3) The results of glaze test. (1) As the gradual substitution of $Ni^{2+}$ ions for $Zn^{2+}$ ions, the color changed from dull white to graish broun gradually in calcium-zinc glaze and calcium glaze, and from white to beige in tile glaze. (2) As the gradual substitution of $Ti^{4+}$ ions for $Sn^{4+}$ ions in $NiO-ZnO-SnO_2-TiO_2$ system, the color was become dull generally and was not change in tile glaze.

• 마이크로전자및패키징학회지
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• 제12권1호
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• pp.35-40
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• 2005

전자 부품에 인체에 유해한 납을 사용하지 않기 위해서 Sn을 주 원소로 한 무연 솔더 합금의 개발이 활발히 진행되고 있다. 무연 솔더 합금의 열역학적, 기계적 특성은 많이 연구되었으나 산화 거동에 대해서는 거의 연구가 되어있지 않다. 따라서 본 연구에서는 Sn 및 Sn-0.7Cu, Sn-3.5Ag, Sn-lZn, Sn-9Zn 합금에 대해 $150^{\circ}C$ 산화 거동을 연구하였다. 전기화학적 환원 분석을 통해 표면에 형성된 산화물의 종류와 양을 분석하여 합금 원소에 따른 산화 거동을 비교하였고 XPS 표면분석을 통하여 환원 실험 결과를 뒷받침하였다. 또한 합금 원소에 따른 산화물 성장 속도를 비교하였다. Sn-0.7Cu 와 Sn-3.5Ag의 경우 Sn의 산화와 비슷한 거동을 보였다. 산화 초기에는 SnO가 형성되고 산화가 진행됨에 따라 SnO 와 $SnO_2$가 같이 존재하되 $SnO_2$가 우세하게 성장하였다. Zn를 포함한 Sn 합금의 경우 ZnO와 $SnO_2$가 형성되었다. Zn의 첨가로 인해 $SnO_2$의 형성이 촉진되었고 SnO는 억제하는 것을 발견하였다.

• 전기학회논문지
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• 제67권1호
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• pp.68-74
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• 2018

All transparent UV photodetector based on ZnO was fabricated with structure of NiO/ZnO/$SnO_2$/ITO by using RF and DC magnetron sputtering system. ZnO was deposited with 4 inch ZnO target (purity 99.99%) for a quality film. In order to build p-n junction up, p-type NiO was formed on n-type ZnO by using reactive sputtering method. The indium tin oxide (ITO) which is transparent conducting oxide (TCO) was applied as a transparent electrode for transporting electrons. To improve the UV photodetector performance, a functional $SnO_2$ layer was selected as an electron transporting and hole blocking layer, which actively controls the carrier movement, between ZnO and ITO. The photodetector (NiO/ZnO/$SnO_2$/ITO) shows transmittance over 50% as similar as the transmittance of a general device (NiO/ZnO/ITO) due to the high transmittance of $SnO_2$ for broad wavelengths. The functional $SnO_2$ layer for band alignment effectively enhances the photo-current to be $15{\mu}A{\cdot}cm^{-2}$ (from $7{\mu}A{\cdot}cm^{-2}$ of without $SnO_2$) with the quick photo-responses of rise time (0.83 ms) and fall time (15.14 ms). We demonstrated the all transparent UV photodetector based on ZnO and suggest the route for effective designs to enhance performance for transparent photoelectric applications.

• 열처리공학회지
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• 제31권3호
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• pp.111-119
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• 2018

We report the post-annealing effect of Sn doped ZnO (ZnO:Sn) thin film grown on sapphire (001) substrate using radio-frequency powder sputtering method. During thermal annealing in a vacuum atmosphere, the ZnO:Sn thin film is transformed into a porous thin film. Based on X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analyses, a possible mechanism for the production of pores is presented. Sn atoms segregate to form clusters that act as catalysts to dissociate Zn-O bonds. The Zn and O atoms subsequently vaporize, leading to the formation of pores in the ZnO:Sn thin film. We also found that Sn clusters were oxidized to form SnO or $SnO_2$ phases.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.198-198
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• 2010

산화물 반도체는 넓은 밴드갭을 가지고 있어 가시광에서 투명하며 높은 이동도로 디스플레이 구동 회로 집적에 유리하다. 또한 가격 및 공정 측면에서도 기존의 Si 기판 소자에 비해 여러 장점을 가지고 있어 차세대 디스플레이의 핵심 기술로 산화물반도체에 대한 관심이 높아지고 있다. 본 연구는 RF 동시 스퍼터링법을 이용하여 Zn-Sn-O 박막을 제조하고, 그 전기적, 광학적, 구조적 특성에 대해 조사하였다. 일정한 증착 온도($100^{\circ}C$)에서 ZnO와 $SnO_2$ 타켓의 인가 파워를 조절하여 Sn/(Zn+Sn) 성분비가 약 40~85%인 Zn-Sn-O 박막을 제조하였다. Sn 함량이 증가할수록 박막의 비저항은 약 $2{\times}10^{-1}$ (Sn 45%)에서 약 $2\;{\times}\;10^{-2}\;{\Omega}{\cdot}cm$ (Sn 67%)까지 감소하다가 다시 증가하는 경향을 보였다. 이 때 캐리어 농도는 $3\;{\times}\;10^{18}$에서 $4\;{\times}\;10^{19}\;cm^{-3}$으로 증가하였으며, 이동도는 11에서 $8\;cm^2/V{\cdot}s$로 약간 감소하였다. XRD분석결과, 제조된 모든 Zn-Sn-O 박막은 비정질 구조를 가짐을 확인하였다. 투과율은 박막 내 Sn함량 증가에 따라 감소하나 모든 시편이 약 70%이상의 투과도를 나타내었다. Zn-Sn-O 박막의 Ga 도핑 영향을 확인하기 위해 ZnO 타켓 대신 갈륨이 5.7 wt.% 도핑된 GZO 타켓을 사용하여 동일한 공정조건에서 박막을 제조하였다. Ga이 첨가된 Zn-Sn-O 박막은 구조적 특성과 광학적 특성에서는 큰 차이를 보이지 않았으나, 전기적 특성의 뚜렷한 변화가 관찰되었다. Sn 함량이 45%인 Zn-Sn-O 박막의 경우, 캐리어 농도가 $3.1\;{\times}\;10^{18}$에서 Ga 도핑 효과로 인해 $1.7\;{\times}\;10^{17}\;cm^{-3}$으로 크게 감소하고 이동도는 11에서 $20\;cm^2/V{\cdot}s$로 증가하였다. 따라서 본 연구는 Zn-Sn-O 비정질 박막에 Ga을 도핑함으로써 산화물 반도체재료로서 요구되는 물성을 만족시킬 수 있다는 가능성을 제시하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.41-44
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• 1997

Using the 2 probe mothods, AC coductivities, dielectric loss factors, capacitances, and impedances were investigated to study. The electrical and sensing properties for SnO$_2$ added ZnO. In air The electrical conductivity of SnO$_2$added ZnO decrease by increasing the content of SnO$_2$, and the relative dielectric constants for 0.05, 5, 7 SnO$_2$ added ZnO are 55, 20, 14, respectively. In 3000ppm CO Gas. relative dielectric constants for 3, 5mol% SnO$_2$ added ZnO are 163, 68, respectively.

• 센서학회지
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• 제21권6호
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• pp.446-450
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• 2012

The important factors in sensors are sensitivity, selectivity, and response time. Oxide semiconductors are high sensitivity, fast response and the advantage of miniaturization. Zn-doped $SnO_2$ materials have been synthesized in order to improve the selectivity of the sensor. ZnO/$SnO_2$ crystals were prepared by a simple hydrothermal process and ultrasound pretreated hydrothermal process. ZnO/$SnO_2$ urchins were fabricated in the precursor solution with [$Zn^{2+}$]:[$Sn^{4+}$] ratio of 1:5 and rod structures were fabricated ratio of 1:1 and 1:3. Surface area ratio was increased by increasing the ratio of [$Sn^{4+}$]. The sensitivity of sensors were highest at the [$Zn^{2+}$]:[$Sn^{4+}$] ratio of 1:5 in ethanol, acetaldehyde, toluene, and nitric oxide.

• 한국전기전자재료학회논문지
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• 제25권6호
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• pp.414-419
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• 2012

In this paper, the properties of SnZnO films obtained from solution process with different component fractions were compared. The thermal behavior of the SnZnO solutions showed only a slight change according to the component fraction change. However, the definite changes were revealed at the structural properties of the SnZnO films. With diverse analyses, the origin of the changes was proved to the influence of phase change from $SnO_2$ to ZnO in SnZnO lattice. With the $SnO_2$-phase-dominant SnZnO, the highest field effect mobility and on/off ratio of about 8.6 $cm^2/Vs$ and $2{\times}10^8$ were achieved, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.313-313
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• 2012

ZnO and $SnO_2$, well-known wide direct band-gap semiconductors, have been considered as the most promising functional materials due to their highly sensitive gas sensing and excellent optical properties. ZnO/$SnO_2$ epitaxial hetrostructure exhibited unique luminescence properties in contrast with individual tetra-pod ZnO and $SnO_2$ nanostructures. Polycrystalline $SnO_2$-based samples $Zn_xSn_{1-x}O_2$(x=0, 0.01, 0.03, 0.05) were prepared by solid state reaction and eco-friendly hydrothermal techniques. Scanning electron microscopy equipped with electron dispersive x-ray spectra confirms the formation of near stoichiometric $Zn_xSn_{1-x}O_2$ nanorods of diameter ~10 nm. X-ray diffraction analysis revealed the rutile structure, except for x=0.07, which may have a small part of $Zn_2SnO_4$ as a secondary phase.

• Transactions on Electrical and Electronic Materials
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• 제17권2호
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• pp.104-108
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• 2016

To research the correlation between oxygen vacancy and the electrical characteristics of ZTO, which is made by using a target mixed ZnO:SnO₂=1:1, the ZnO, SnO₂ and ZTO were analyzed by PL, XPS, XRD patterns and electrical properties. It was compared with the electron orbital spectra of O 1s in accordance with the electrical characteristics of ZnO, SnO₂ and ZTO. The electrical characteristics of ZTO were improved by increasing the annealing temperatures, due to the high degree of crystal structures at a high temperature, and the physical properties of ZTO was similar to that of ZnO. The amorphous structure of SnO₂ was increased with increasing the temperature. The Schottky contact of oxide semiconductors was formed using the depletion region, which is increased by the electron-hole combination due to the annealing processes. ZnO showed the Ohmic contact in spite of a high annealing temperature, but SnO₂ and ZTO had Schottky contact. As such, it was confirmed that the electrical properties of ZTO are affected by the molecules of SnO₂.