• 제목/요약/키워드: Sn/Cu 도금

검색결과 111건 처리시간 0.025초

ʼn-BGA에서 Sn-Ag-Cu 솔더의 도금층에 따른 솔더링성 연구 (A Study on Solderability of Sn-Ag-Cu Solder with Plated Layers in ʼn-BGA)

  • 신규식;정석원;정재필
    • Journal of Welding and Joining
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    • 제20권6호
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    • pp.59-59
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    • 2002
  • Sn-Ag-Cu solder is known as most competitive in many kinds of Pb-free solders. In this study, effects of solderability with plated layers such as Cu, Cu/Sn, Cu/Ni and Cu/Ni/Au were investigated. Sn-3.5Ag-0.7Cu solder balls were reflowed in commercial reflow machine (peak temp. : 250℃ and conveyer speed : 0.6m/min). In wetting test, immersion speed was 5mm/sec., immersion time 5sec., immersion depth 4mm and temperature of solder bath was 250℃. Wettability of Sn-3.5Ag-0.7Cu on Cu, Cu/Sn (5㎛), Cu/Ni (5㎛), and Cu/Ni/Au (5㎛/500Å) layers was investigated. Cu/Ni/Au layer had the best wettability as zero cross time and equilibrium force, and the measured values were 0.93 sec and 7mN, respectively. Surface tension of Sn-3.5Ag-0.7Cu solder turmed out to be 0.52N/m. The thickness of IMC is reduced in the order of Cu, Cu/Sn, Cu/Mi and Cu/Ni/Au coated layer. Shear strength of Cu/Ni, Cu/Sn and Cu was around 560gf but Cu/Ni/Au was 370gf.

$\mu-BGA$에서 Sn-Ag-Cu 솔더의 도금층에 따른 솔더링성 연구 (A Study on Solderability of Sn-Ag-Cu Solder with Plated Layers in $\mu-BGA$)

  • 신규식;정석원;정재필
    • Journal of Welding and Joining
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    • 제20권6호
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    • pp.783-788
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    • 2002
  • Sn-Ag-Cu solder is known as most competitive in many kinds of Pb-free solders. In this study, effects of solderability with plated layers such as Cu, Cu/Sn, Cu/Ni and Cu/Ni/Au were investigated. Sn-3.5Ag-0.7Cu solder balls were reflowed in commercial reflow machine (peak temp.:$250^{\circ}C$and conveyer speed:0.6m/min). In wetting test, immersion speed was 5mm/sec., immersion time 5sec., immersion depth 4mm and temperature of solder bath was $250^{\circ}C$. Wettability of Sn-3.5Ag-0.7Cu on Cu, Cu/Sn ($5\mu\textrm{m}$), Cu/Ni ($5\mu\textrm{m}$), and Cu/Ni/Au ($5\mu\textrm{m}/500{\AA}$) layers was investigated. Cu/Ni/Au layer had the best wettability as zero cross time and equilibrium force, and the measured values were 0.93 sec and 7mN, respectively. Surface tension of Sn-3.5Ag-0.7Cu solder turmed out to be 0.52N/m. The thickness of IMC is reduced in the order of Cu, Cu/Sn, Cu/Mi and Cu/Ni/Au coated layer. Shear strength of Cu/Ni, Cu/Sn and Cu was around 560gf but Cu/Ni/Au was 370gf.

전해도금에 의해 형성된 Sn-Ag-Cu 솔더범프와 Cu 계면에서의 열 시효의 영향 (Influence of Thermal Aging at the Interface Cu/sn-Ag-Cu Solder Bump Made by Electroplating)

  • 이세형;신의선;이창우;김준기;김정한
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2007년 추계학술발표대회 개요집
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    • pp.235-237
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    • 2007
  • In this paper, fabrication of Sn-3.0Ag-0.5Cu solder bumping having accurate composition and behavior of intermetallic compounds(IMCs) growth at interface between Sn-Ag-Cu bumps and Cu substrate were studied. The ternary alloy of the Sn-3.0Ag-0.5Cu solder was made by two binary(Sn-Cu, Sn-Ag) electroplating on Cu pad. For the manufacturing of the micro-bumps, photo-lithography and reflow process were carried out. After reflow process, the micro-bumps were aged at $150^{\circ}C$ during 1 hr to 500 hrs to observe behavior of IMCs growth at interface. As a different of Cu contents(0.5 or 2wt%) at Sn-Cu layer, behavior of IMCs was estimated. The interface were observed by FE-SEM and TEM for estimating of their each IMCs volume ratio and crystallographic-structure, respectively. From the results, it was found that the thickness of $Cu_3Sn$ layer formed at Sn-2.0Cu was thinner than the thickness of that layer be formed Sn-0.5Cu. After aging treatment $Cu_3Sn$ was formed at Sn-0.5Cu layer far thinner.

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무전해 동도금 피막의 접착력 향상에 관한 연구 - PET 필름의 전처리 조건의 영향 - (Adhesion Improvement of Electroless Copper Plated Layer on PET Film - Effect of Pretreatment Conditions -)

  • 오경화;김동준;김성훈
    • 폴리머
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    • 제25권2호
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    • pp.302-310
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    • 2001
  • 무전해도금법을 이용하여 구리/PET 필름 복합재료를 제조하였으며 에칭방법과 촉매액의 조성 및 acceleration 방법을 달리하여 PET 필름과 무전해도금된 구리 피막간의 접착력을 향상시키고자 하였다. HCl 용액으로 에칭된 PET 필름은 NaOH에 의한 것보다 더욱 세밀하게 에칭되어져 구리와 PET 필름간의 접착력은 향상되었으나 전자파 차폐효과는 유사한 경향을 보였다. 촉매액의 조성변화에 따른 영향을 살펴본 결과 PdCl$_2$:SnCl$_2$의 몰비가 1:4에서 1:16으로 증가할수록 PET 필름 위에 적층된 Pd/Sn 콜로이드 입자들의 크기가 감소하며 고르게 분포되는 경향을 보였다. 따라서 이들의 몰비가 증가할수록 구리도금이 균일하고 조밀하게 이루어져 접착력 및 차폐효과가 증가하였다. 또한 NaOH보다 HCl로 acceleration한 경우 촉매 입자의 크기가 작고 더 균일하게 분포되어 우수한 접착력과 도금물성을 나타내었다.

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웨이퍼 범프 도금을 위한 고속용 구리 필러 및 저알파선 주석-은 솔더 도금액 (High Speed Cu Pillar and Low Alpha Sn-Ag Solder Plating Solution for Wafer Bump)

  • 김동현;이성준;노기룡;김건호
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2015년도 춘계학술대회 논문집
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    • pp.31-31
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    • 2015
  • 본 연구는, TAB(Tape Automated Bonding)접속이나 Flip Chip 접속에 의한 패캐징을 실현시키기 위해, 실리콘 웨이퍼 표면에 구리 필러 및 주석 합금을 전기 도금법으로 형성하는 전기 접점용 범프에 관한 것이다. 본 연구에서는, 균일 범프 두께, 범프 표면의 균일화, 범프 내의 보이드 발생 문제 해결, 균일한 합금 조성 및 도금 속도의 고속화를 위해, Cu 도금액 및 Sn-Ag 도금액의 첨가제에 의한 표면 형상의 제어를 중심으로 그 성능에 대해 보고한다.

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플라즈마 에칭 및 $PdCl_2/SnCl_2$ 촉매조건이 무전해 동도금 피막의 성능에 미치는 영향 (Effect of Plasma Etching and $PdCl_2/SnCl_2$ Catalyzation on the Performance of Electroless Plated Copper Layer)

  • 오경화;김동준;김성훈
    • 한국의류학회지
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    • 제27권7호
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    • pp.843-850
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    • 2003
  • Cu/PET film composites were prepared by electroless copper plating method. In order to improve adhesion between electroless plated Cu layer and polyester (PET) film, the effect of pretreatment conditions such as etching method, mixed catalyst composition were investigated. Chemical etching and plasma treatment increased surface roughness in decreasing order of Ar>HCl>O$_2$>NH$_3$. However, adhesion of Cu layer on PET film increased in the following order: $O_2$<Ar<HCl<NH$_3$. It indicated that appropriate surface roughness and introduction of affinitive functional group with Pd were key factors of improving adhesion of Cu layer. PET film was more finely etched by HCI tolution, resulting in an improvement in adhesion between Cu layer and PET film. Plasma treatment with NH$_3$produced nitrogen atoms on PET film, which enhances chemisorption of Pd$^{2+}$ on PET film, resulting in improved adhesion and shielding effectiveness of Cu layer deposited on the Pd catalyzed surface. Surface morphology of Cu plated PET film revealed that Pd/Sn colloidal particles became more evenly distributed in the smaller size by increasing the molar ratio of PdCl$_2$; SnCl$_2$from 1 : 4 to 1 : 16. With increasing the molar ratio of mixed catalyst, adhesion and shielding effectiveness of Cu plated PET film were increased.d.

표면마무리를 위한 Sn-2.5Cu 합금 도금막의 특성 (Characteristics of Electroplated Sn-2.5Cu Alloy Layers for Surface Finishing)

  • 김주연;배규식
    • 한국재료학회지
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    • 제13권2호
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    • pp.133-136
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    • 2003
  • Sn-2.5Cu alloy layers were deposited on the Alloy 42 lead-frame substrates by the electroplating method, and their microstructures, adhesion strength, and electrical resistivity were measured to evaluate the applicability of Sn-Cu alloy as a surface finishing material of electronic parts. The Sn-2.5Cu layers were electroplated in the granular form, and composed of pure Sn and Cu$_{6}$Sn$_{5}$ intermetallic compound. Surfaces of the electroplated Sn-2.5Cu layers were rather rough and also the thickness variance was large. The adhesion strength of the Sn-2.5Cu electroplated layers was highly comparable to that of the electroplated Cu alloy layer and the electrical conductivity was about 10 times higher than the pure Sn. After the 20$0^{\circ}C$ 30 min. annealing of the electroplated Sn-2.5Cu layers, the surface roughness was reduced, and adhesion strength and conductivity were improved. These results showed the Sn-Cu alloys can be used as an excellent surface finishing material.ial.

Cu 비아를 이용한 MEMS 센서의 스택 패키지용 Interconnection 공정 (Interconnection Processes Using Cu Vias for MEMS Sensor Packages)

  • 박선희;오태성;엄용성;문종태
    • 마이크로전자및패키징학회지
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    • 제14권4호
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    • pp.63-69
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    • 2007
  • Cu 비아를 이용한 MEMS 센서의 스택 패키지용 interconnection 공정을 연구하였다. Ag 페이스트 막을 유리기판에 형성하고 관통 비아 홀이 형성된 Si 기판을 접착시켜 Ag 페이스트 막을 Cu 비아 형성용 전기도금 씨앗층으로 사용하였다. Ag 전기도금 씨앗층에 직류전류 모드로 $20mA/cm^2$$30mA/cm^2$의 전류밀도를 인가하여 Cu 비아 filling을 함으로써 직경 $200{\mu}m$, 깊이 $350{\mu}m$인 도금결함이 없는 Cu 비아를 형성하는 것이 가능하였다. Cu 비아가 형성된 Si 기판에 Ti/Cu/Ti metallization 및 배선라인 형성공정, Au 패드 도금공정, Sn 솔더범프 전기도금 및 리플로우 공정을 순차적으로 진행함으로써 Cu 비아를 이용한 MEMS 센서의 스택 패키지용 interconnection 공정을 이룰 수 있었다.

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