• 한국전기전자재료학회논문지
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• 제18권9호
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• pp.787-792
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• 2005

Chemical mechanical polishing(CMP) has become the process of choice for modem semiconductor devices to achieve both local and global planarization. CMP is a complex process which depends on numerous variables such as macro, micro and nano-geometry of pad, relative velocity between pad and wafer stiffness and dampening characteristics of pad, slurry, pH, chemical components of slurry, abrasive concentration, abrasive size, abrasive shape, etc. Especially, an oxidizer of chemical components is very important remove a target material in metal CMP process. This paper introduces the effect of oxidizer such as $H_2O_2,\;Fe(NO_3)_3\;and\;KIO_3$ in slurry for tungsten which is used in via or/and plug. Finally the duplex reacting mechanism of $oxidizer(H_2O_2)$ through adding the $catalyst(Fe(NO_3)_3)$ could acquire the sufficient removal rate in tungsten CMP.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.63-63
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• 2003

The nanotopography of silicon wafers has emerged as an important factor in the STI process since it affects the post-CMP thickness deviation (OTD) of dielectric films. Ceria slurry with surfactant is widely applied to STI-CMP as it offers high oxide-to-nitride removal selectivity. Aiming to control the nanotopography impact through ceria slurry characteristics, we examhed the effect of surfactant concentration and abrasive size on the nanotopography impact. The ceria slurries for this study were produced with cerium carbonate as the starting material. Four kinds of slurry with different size of abrasives were prepared through a mechanical treatment The averaged abrasive size for each slurry varied from 70 nm to 290 nm. An anionic organic surfactant was added with the concentration from 0 to 0.8 wt %. We prepared commercial 8 inch silicon wafers. Oxide Shu were deposited using the plasma-enhanced tetra-ethyl-ortho-silicate (PETEOS) method, The films on wafers were polished on a Strasbaugh 6EC. Film thickness before and after CMP was measured with a spectroscopic ellipsometer, ES4G (SOPRA). The nanotopogrphy height of the wafer was measured with an optical interferometer, NanoMapper (ADE Phase Shift)

• Transactions on Electrical and Electronic Materials
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• 제4권2호
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• pp.1-4
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• 2003

The purpose of this study was to investigate the characteristics of slurry including phosphoric acid for chemical-mechanical planarization of copper and tantalum nitride. In general, the slurry for copper CMP consists of alumina or colloidal silica as an abrasive, organic acid as a complexing agent, an oxidizing agent, a film forming agent, a pH control agent and additives. Hydrogen peroxide (H$_2$O$_2$) is the material that is used as an oxidizing agent in copper CMP. But, the hydrogen peroxide needs some stabilizers to prevent decomposition. We evaluated phosphoric acid (H$_3$PO$_4$) as a stabilizer of the hydrogen peroxide as well as an accelerator of the tantalum nitride CMP process. We also estimated dispersion stability and zeta potential of the abrasive with the contents of phosphoric acid. An acceleration of the tantalum nitride CMP was verified through the electrochemical test. This approach may be useful for the development of the 2$\^$nd/ step copper CMP slurry and hydrogen peroxide stability.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.719-722
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• 2004

In this work, we applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film. We compared the structural characteristics of BST $(Ba_{0.6}Sr_{0.4}TiO_3)$ films before and after the CMP process. Their dependence on slurry composition was also investigated. Finally, we suggest the self-developed titania $(TiO_2)$ mixed abrasive slurry (MAS) for FRAM applications. Our experimental results on the ferroelectric film are encouraging for the next generation of FRAM applications.

• 반도체디스플레이기술학회지
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• 제3권1호
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• pp.15-20
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• 2004

Through shallow trench isolation (STI) chemical mechanical polishing (CMP) tests, we investigated the dependence of pad surface temperature on the abrasive and additive concentrations in ceria slurry under varying pressure using blanket film wafers. The pad surface temperature after CMP increased with the abrasive concentration and decreased with the additive concentration in slurries for the constant down pressure. A possible mechanism is that the additive adsorbed on the film surfaces during polishing decreases the friction coefficient, hence the pad surface temperature gets lower with increasing the additive concentration. This difference in temperature was more remarkable for the higher concentration of abrasives. In addition, in-situ measurement of spindle motor was carried out during oxide and nitride polishing. The averaged motor current for oxide film was higher than that for nitride film, meaning the higher friction coefficient.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1999년도 제30회 추계학술대회
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• pp.263-268
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• 1999

Langasite, a new piezoelectric material was polished by CMP(chemical mechanical polishing). To enhance the polishing rate, alumina abrasives were added to commercial ILD1300 slurry which contains silica abrasive. The effect of added alumina 0 the silica slurry on the polishing rate and damage of langasite was investigated, Experimental results show that the polishing rate and roughness increases with increasing added alumina particle size, Crystallinity of the langasite is also lowered by alumina addition.

• 한국전기전자재료학회논문지
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• 제17권10호
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• pp.1041-1048
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• 2004

Chemical mechanical polishing (CMP) process was studied in terms of tribology in this paper. CMP performed by the down force and the relative motion of pad and wafer with slurry is typically tribological system composed of friction, wear and lubrication. The piezoelectric quartz sensor for friction force measurement was installed and the friction force was detected during CMP process. Various friction signals were attained and analyzed with the kind of pad, abrasive and abrasive concentration. As a result of experiment, the lubrication regime is classified with ηv/p(η, v and p; the viscosity, relative velocity and pressure). The characteristics of friction and material removal mechanism is also different as a function of the kind of abrasive and the abrasive concentration in slurry. Especially, the material removal per unit distance is directly proportional to the friction force and the non~uniformity has relation to the coefficient of friction.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.37-38
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• 2013

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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• pp.101-102
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• 2006

BTO ($BaTiO_3$) thin film is one of the high dielectric materials for high-density dynamic random access memories (DRAMs) due to its relatively high dielectric constant, It is generally known that BTO film is difficult to be etched by plasma etching, but high etch rate with good selectivity to pattern mask was required. The problem of sidewall angle also still remained to be solved in plasma etching of BTO thin film. In this study, we first examined the patterning possibility of BTO film by chemical mechanical polishing (CMP) process instead of plasma etching. The sputtered BTO film on TEOS film as a stopper layer was polished by CMP process with the sell-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS). respectively. The removal rate of BTO thin film using the $BaTiO_3$-mixed abrasive slurry ($BaTiO_3$-MAS) was higher than that using the $TiO_2$-mixed abrasive slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.378-381
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• 2003

The chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing However, cost of ownership (COO) and cost of consumables (COC) were relatively increased because of expensive slurry. In this paper, the effects of different slurry composition on the oxide CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity. We prepared the various kinds of slurry. In order to save the costs of slurry, the original slurry was diluted by de-ionized water (DIW). And then, alunima abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry.