• Title/Summary/Keyword: Single beam method

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System Design and Performance Analysis of 3D Imaging Laser Radar for the Mapping Purpose (맵핑용 3차원 영상 레이저 레이다의 시스템 설계 및 성능 분석)

  • La, Jongpil;Ko, Jinsin;Lee, Changjae
    • Journal of the Korea Institute of Military Science and Technology
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    • v.17 no.1
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    • pp.90-95
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    • 2014
  • The system design and the system performance analysis of 3D imaging laser radar system for the mapping purpose is addressed in this article. For the mapping, a push-bloom scanning method is utilized. The pulsed fiber laser with high pulse energy and high pulse repetition rate is used for the light source of laser radar system. The high sensitive linear mode InGaAs avalanche photo-diode is used for the laser receiver module. The time-of-flight of laser pulse from the laser to the receiver is calculated by using high speed FPGA based signal processing board. To reduce the walk error of laser pulse regardless of the intensity differences between pulses, the time of flight is measured from peak to peak of laser pulses. To get 3D image with a single pixel detector, Risley scanner which stirs the laser beam in an ellipsoidal pattern is used. The system laser energy budget characteristics is modeled using LADAR equation, from which the system performances such as the pulse detection probability, false alarm and etc. are analyzed and predicted. The test results of the system performances are acquired and compared with the predicted system performance. According to test results, all the system requirements are satisfied. The 3D image which was acquired by using the laser radar system is also presented in this article.

Analysis of Stacking-Fault Proportion on the Mixed Phase of the $Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2) Superconducting Thin Films ($Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2) 초전도 박막의 혼합상에 대한 고용비 해석)

  • Yang, Seung-Ho;Lee, Ho-Shik;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.486-487
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    • 2007
  • $Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2) thin films have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure in vacuum chamber was varied between $2{\times}10^{-6}{\sim}4{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation.

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The Forced Motion Analyses by Using Two Dimensional 6-Node and Three Dimensional 16-Node Isoparametric Elements with Modification of Gauss Sampling Point (6절점 2차원 및 16절점 3차원 등매개변수 요소의 가우스 적분점 수정을 이용한 강제진동 해석)

  • 김정운;권영두
    • Computational Structural Engineering
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    • v.8 no.4
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    • pp.87-97
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    • 1995
  • For the same configuration of two-dimensional finite element models, 6-node element exhibits stiffer bending stiffness than 8-node element. This is true in the relation between 16-node element and 20-node element for three-dimensional model. This stiffening phenomenon comes from the elimination of several mid nodes from full-node elements. Therefore, this may be called 'relative stiffness stiffening phenomenon'. It seems that there are a couple of ways to correct the stiffening effect, however, we could find only one effective method-the method of modification of Gauss sampling points-which passes the patch test and does not alter other kinds of stiffness, such as extensional stiffness. The quantity of modification is a function of Poisson's ratios of the constituent materials. We could obtain two modification equations, one for plane stress case and the other for plane strain case. This method can be extended to 3-dimensional solid elements. Except the exact plane strain cases, most 3-dimensional plates could be modeled successfully with 16-node element modified by the equation for the plane stress case. The effectiveness of the modification method is checked by applying it to several examples with excellent improvements. In numerical examples, beams with various boundary conditions are subjected to static and time-dependent loads. Free and forced motion analyses of beams and plates are also tested. The beam and plate may be composed of isotropic multilayers as well as a single layer.

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On the Effective Shear Rigidity in Ship Vibration Analysis (선체진동해석(船體振動解析)에 있어서의 유효전단강성도(有效剪斷剛性度))

  • K.C.,Kim;S.H.,Choi
    • Bulletin of the Society of Naval Architects of Korea
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    • v.22 no.1
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    • pp.45-53
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    • 1985
  • For the analysis of vertical vibrations of a ship's hull, the Timoshenko beam analogy is accepted up to seven or eight-node modes provided that the system parameters are properly calculated. As to the shear coefficient, it has been a common practice to apply the strain energy method or the projected area method. The theoretical objection to the former is that it ignores lateral contraction due to Poisson's ratio, and the latter is of extreme simplifications. Recently, Cowper's and Stephen's shear coefficient formulas have drawn ship vibration analysts' attentions because these formulas, derivation of which are based on an integrations of the equations of three-dimensional elasticity, take Poisson's ratio into account. Providing computer programs for calculation of the shear coefficient of ship sections modeled as thin-walked multicell sections by each of the forementioned methods, the authors calculated natural vibration characteristics of a bulk carrier and of a container ship by the transfer matrix method using shear coefficients obtained by each of the methods, and discussed the results in comparision. The major conclusions resulted from this investigation are as follows: (1) The shear coefficients taking account of the effects of Poisson's ratio, Cowper's $K_c$ and Stephen's $K_s$, result in higher values of about 10% in maximum as compared with the shear coefficient $K_o$ based on the conventional strain energy methods; (a) $K_c/K_o{\cong}1.05\;and\;K_s/K_o{\cong}1.10$ for ships having single skin side-shell such as a bulk carrier. (b) $K_c/K_o{\cong}1.02\;and\;K_s/K_o{\cong}1.05$ for ships having longitudinally through bulkheads and/or double side-shells in the portion of the cargo hod such as a container carrier. (2) The distributions of the effective shear area along the ship's hull based on each of $K_o,\;K_c\;and\;K_s$ are similar each another except the both end portions. (3) Natural frequencies and mode shapes of the hull based on each of $K_c\;and\;K_s$ are of small differences as compared each other. (4) In cases of using $K_c\;or\;K_s$ in ship vibration analysis, it is also desirable to have the bending rigidity be corrected according to the effective breadth concept. And then, natural frequencies and mode shapes calculated with the bending rigidity corrected in the above and with each of $K_o,\;K_c\;and\;K_s$ result in small differences as compared each another. (5) Referring to those mentioned in the above (3) and (4) and to the full-scale experimental results reported by Asmussen et al.[17], and considering laboursome to prepare the computer input data, the following suggestions can safely be made; (a) Use of $K_o$ in ship vibration analysis is appropriate in practical senses. (b) Use of $K_c$ is appropriate even for detailed vibration analysis of a ship's hull. (6) The effective shear area based on the projected area method is acceptable for the two-node mode.

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Growth characteristics of titanium boride($\textrn{TiB}_{x}$) thin films deposited by dual-electron-beam evaporation (2원전자빔 증착법에 의한 티타늄붕화물($\textrn{TiB}_{x}$) 박막의 성장특성)

  • 이영기;이민상;임철민;김동건;진영철
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.1
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    • pp.20-26
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    • 2001
  • Titanium boride ($\textrn{TiB}_{x}$) films were deposited on (100) silicon substrates at the substrate temperature of $500^{\circ}C$ by means of the co-evaporation of titanium and boron evaporants during deposition. The co-evaporation method makes it possible to deposit the non-stoichiometric films with different boron-to-titanium ratio($0{\le}B/Ti \le 2.5$). The resistivity increases linearly as the boron-to-titanium ratio in the as-deposited films is increased. The surface roughness of $\textrn{TiB}_{x}$ films is changed as a function of the boron-to-titanium ratio. The XRD spectrum for pure titanium film shows a highly (002) preferred orientation. For B/Ti=0.59 ratio only a single TiB phase that shows a (111) preferred orientation is observed. However, the $\textrn{TiB}_{x}$ phase with the hexagonal structure of the $AlB_2$(C32) type appears as the boron concentration increase, and only a single $\textrn{TiB}_{x}$ phase is observed for $B/Ti \ge 2.0$ ratio. The $\textrn{TiB}_{x}$/Si samples reveal a tensile stress (3~$20{\times}^9$dyn/$\textrm{cm}^2$) in the overall composition of the films, although the magnitude of the residual stresses is depended on the nominal B/Ti ratio.

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High Voltage β-Ga2O3 Power Metal-Oxide-Semiconductor Field-Effect Transistors (고전압 β-산화갈륨(β-Ga2O3) 전력 MOSFETs)

  • Mun, Jae-Kyoung;Cho, Kyujun;Chang, Woojin;Lee, Hyungseok;Bae, Sungbum;Kim, Jeongjin;Sung, Hokun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.3
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    • pp.201-206
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    • 2019
  • This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

Measurement of picosecond laser pulsewidth and pulseshape by two-photon fluorescence and noncolloinear type I second harmonic generation method (이광자 형광법과 비공선 일종 이차고조파법에 의한 피코초 레이저 펄스폭과 펄스형 측정)

  • 한기호;박종락;이재용;김현수;엄기영;변재오;공흥진
    • Korean Journal of Optics and Photonics
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    • v.7 no.3
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    • pp.251-259
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    • 1996
  • Two-Photon Fluorescence (TPF) experiment measures temporal width of an amplified short laser pulse which has passed through a four-pass Nd: glass amplifier, after selecting a single pulse from pulse train Q-switched and mode-locked(QSML) in Nd:YLF master oscillator. Determination of pulsewidth and pulseshape was also made with detection of autocorrelation trace of CW mode-locked pulse train by using noncollinear type I Second Harmonic Generation (SHG) method. The observed TPF track showed various patterns, depending on pulse-selecting position in QSML pulse train. That is, autocorrelation of a pulse extracted at front of the train displayed smooth pulse shape, while one from the trailing part of the train created many sharp spikes and substructure in the pulse. By TPF method, pulsewidth was measured to be 44.4 ps with contrast ratio of 2.86 which enabled us to find out energy fraction of a pulse to total energy, (sum of pulse and background); we obtain the value of 0.62. Pulsewidth of 46.6ps was also acquired in another SHG experiment with the help of only mode-locked pulse train. On the other hand, we confirmed that shape of the pulse is close to $sech^2$ one as a result of fitting the SHG autocorrelation signal with various functions. With simulation using this $sech^2$ type of pulse, pulsewidth reduction of the beam, having passed through four-pass amplifier, was also verified.

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Simple and Efficient Methods for the Response Estimation of Building Structure Subjected to Human Induced Loads (무리하중을 받는 구조물의 간편하고 효율적인 응답추정)

  • Kim, Tae-Ho;Lee, Dong-Guen;Min, Kyung-Won
    • Journal of the Earthquake Engineering Society of Korea
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    • v.9 no.4 s.44
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    • pp.19-28
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    • 2005
  • Long span structures with low natural frequencies such as shopping malls, large offices, and assembly rooms may experience signification dynamic responses due to human activities. In many cases, the group activities are common thing in comparison with the single activity. The purpose of this study is to evaluate the responses of building structure subjected to group human loads using mode shapes. For this purpose, equations to estimate the magnitudes ol responses ol structure subjected to group walking loads are derived. And the correlation of loads is verified for identifying the relation of each human load composing of group human loads using two load cells. The method is proposed for evaluating the responses of structure subjected to group loads using mode shapes and correlation function related to each human loads. The effectiveness ol the proposed method is verified analytically using a simple beam and floor and experimentally on a footbridge measuring the structural response induced by group pedestrians for the case of synchronization or not. Results indicate that the amplitudes of group walking loads can be easily estimated if the mode shapes are available, and that the corresponding structural responses can be estimated easily by the simple response measurement using the proposed method.

$TiO_2$ Thin Film Patterning on Modified Silicon Surfaces by MOCVD and Microcontact Printing Method

  • 강병창;이종현;정덕영;이순보;부진효
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.77-77
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    • 2000
  • Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

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Development of Independent Target Approximation by Auto-computation of 3-D Distribution Units for Stereotactic Radiosurgery (정위적 방사선 수술시 3차원적 공간상 단위분포들의 자동계산법에 의한 간접적 병소 근사화 방법의 개발)

  • Choi Kyoung Sik;Oh Seung Jong;Lee Jeong Woo;Kim Jeung Kee;Suh Tae Suk;Choe Bo Young;Kim Moon Chan;Chung Hyun-Tai
    • Progress in Medical Physics
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    • v.16 no.1
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    • pp.24-31
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    • 2005
  • The stereotactic radiosurgery (SRS) describes a method of delivering a high dose of radiation to a small tar-get volume in the brain, generally in a single fraction, while the dose delivered to the surrounding normal tissue should be minimized. To perform automatic plan of the SRS, a new method of multi-isocenter/shot linear accelerator (linac) and gamma knife (GK) radiosurgery treatment plan was developed, based on a physical lattice structure in target. The optimal radiosurgical plan had been constructed by many beam parameters in a linear accelerator or gamma knife-based radiation therapy. In this work, an isocenter/shot was modeled as a sphere, which is equal to the circular collimator/helmet hole size because the dimension of the 50% isodose level in the dose profile is similar to its size. In a computer-aided system, it accomplished first an automatic arrangement of multi-isocenter/shot considering two parameters such as positions and collimator/helmet sizes for each isocenter/shot. Simultaneously, an irregularly shaped target was approximated by cubic structures through computation of voxel units. The treatment planning method by the technique was evaluated as a dose distribution by dose volume histograms, dose conformity, and dose homogeneity to targets. For irregularly shaped targets, the new method performed optimal multi-isocenter packing, and it only took a few seconds in a computer-aided system. The targets were included in a more than 50% isodose curve. The dose conformity was ordinarily acceptable levels and the dose homogeneity was always less than 2.0, satisfying for various targets referred to Radiation Therapy Oncology Group (RTOG) SRS criteria. In conclusion, this approach by physical lattice structure could be a useful radiosurgical plan without restrictions in the various tumor shapes and the different modality techniques such as linac and GK for SRS.

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