• Journal of the Korean institute of surface engineering
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• v.31 no.5
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• pp.237-244
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• 1998

In this stydy, submicron shallow trenches applied to STI(shallow tench isolation) were etched using inductively coupled $CI_2$/HBr and $CI_2/N_2$plasmas and the physical and electrical defects remaining on the etched silicon trench surfaces and the effects of various annealing and oxidation on the removal of the defects were studied. Using high resolution electron microscopy(HRTEM), Physical defects were investigated on the silicon trench surfaces etched in both 90%$CI_2$/ 10%$N_2$ and 50%$CI_2$/50%HBr. Among the areas in the tench such as trench bottom, bottom edge, and sidewall, the most dense defects were found near the trench bottom edge, and the least dense defects were found near the trench bottom edge, and least dense defects compared to that etched with ment as well as hydrogen permeation. Thermal oxidation of 200$\AA$ atthe temperature up to $1100^{\circ}C$apprars not to remove the defects formed on the etched silicon trenches for both of the etch conditions. To remove the physicall defects, an annealing treatment at the temperature high than $1000^{\circ}C$ in N for30minutes was required. Electrical defects measured using a capacitance-voltage technique showed the reduction of the defects with increasing annealing temperature, and the trends were similar to the results on the physical defects obtained using transmission electron microscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.08a
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• pp.38-39
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.25-25
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• 1997

• Restorative Dentistry and Endodontics
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• v.14 no.2
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• pp.65-76
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• 1989

The purpose of this study was to observe the effect on the removal of dentinal smear layer and morphological changes of reduced dentin surfaces by various dentin surface conditioners. Thirty-two healthy human premolars extracted due to periodontal or orthodontic reasons were used. The teeth were cross-sectioned to expose dentin at the middle portion of the crown with diamond rotary saw. The specimens were then divided into 8 groups. The sectioned dentin surfaces in group 1 to 4 were grinded with No. 400 grit silicone abrasive paper and those in group 5 to 8 were cut with #700 carbide bur under air-water spray. The grinded or cut dentin surfaces were conditioned with 3% $H_2O$, Dentin Conditioner(GC Inter. Corp., Japan), and Scotchprep(3M Dent Prod., U.S.A) according to manufacturer's directions. All the specimens were dried in room temperature for 48 hours, and gold-coated with Eiko ion coater(Eik-engineering Co.), and observed in Hitachi S-450 Scanning electron microscope at 15-25 KV. The following results were obtained; 1. The dentin surfaces grinded with the silicon abrasive paper were rougher in texture and heavier in amount of smear layer than those cut with the carbide bur. 2. Scrubbing of 3% $H_2O_2$ was not effective in removing dentinal smear layer. 3. 20-second conditioning of Dentin Conditioner (GC Inter. Corp) resulted in the removal of a significant amount of the smear layer without removing the tubular plugs and dissolving the peritubular dentin. 4. Scotchprep removed the smear layer very effectively. But at the same time it dissolved the peritubular dentin. 5. Irrespective of the uses of the silicon carbide abrasive paper or the carbide bur the morphological changes of dentin surfaces treated with the same conditioning agents were similar.

• Tribology and Lubricants
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• v.33 no.3
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• pp.92-97
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• 2017

The understanding of the friction characteristics of micro-textured surface is of great importance to enhance the tribological properties of nano- and micro-devices. We fabricate rectangular patterns with submicron-scale structures on a Si wafer surface with various pitches and heights by using a focused ion beam (FIB). In addition, we fabricate tilted rectangular patterns to identify the influence of the tilt angle ($45^{\circ}$ and $135^{\circ}$) on friction behaviour. We perform the friction test using lateral force microscopy (LFM) employing a colloidal probe. We fabricate the colloidal probe by attaching a $10{\pm}1-{\mu}m$-diameter borosilicate glass sphere to a tipless silicon cantilever by using a ultraviolet cure adhesive. The applied normal loads range between 200 nN and 1100 nN and the sliding speed was set to $12{\mu}m/s$. The test results show that the friction behavior varied depending on the pitch, height, and tilt angle of the microstructure. The friction forces were relatively lower for narrower and deeper pitches. The comparison of friction force between the sub-micro-structured surfaces and the original Si surface indicate an improvement of the friction property at a low load range. The current study provides a better understanding of the influence of pitch, height, and tilt angle of the microstructure on their tribological properties, enabling the design of sub-micro- and micro-structured Si surfaces to improve their mechanical durability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1080-1083
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• 2002

In this paper, we have studied with regard to the use of lasers for modifying the surface properties of silicon in order to improve it's wettability and adhesion characteristics. Using an Nd:YAG pulse laser, the wettability and adhesion characteristics of silicon surface have been developed by an Nd:YAG pulse laser. It was found that the laser treatment of silicon surfaces modified the surface energy. In the result of wetting experiments, by the sessile drop technique using the distilled water, wetting characteristic of silicon after the laser irradiation shows a decreased value of the contact angle. In case of the laser treated silicon surface, laser direct writing of copper lines has been achieved by pyrolytic decomposition of copper formate films$(Cu(HCOO)_2{\cdot}4H_2Q)$, using a focused $Ar^+$ laser beam$(\lambda=514.5nm)$ on the silicon substrates. The deposited patterns were measured by energy dispersive X-ray(EDX), Scanning Electron Microscopy(SEM) and surface profiler($\alpha$-step) to examine the cross section of deposited copper lines and linewidth.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.7
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• pp.424-432
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• 2000

The plasma surface treatment, using hydrogen gas, of the silicon wafer was investigated as a pretreatment for the application to silicon-on-insulator (SOI) wafers using the silicon direct bonding technique. The chemical reactions of hydrogen plasma with surfaces were used for both the surface activation and the removal of surface contaminants. As a result of exposure of silicon wafer to the plasma, an active oxide layer was formed on the surface, which was rendered hydrophilic. The surface roughness and morphology were estimated as functions of plasma exposing time as well as of power. The surface became smoother with decreased incident hydrogen ion flux by reducing plasma exposing time and power. This process was very effective to reduce the carbon contaminants on the silicon surface, which was responsible for a high initial surface energy. The initial surface energy measured by the crack propagation method was 506 mJ/m2, which was up to about three times higher than that of a conventional RCA cleaning method.

• Korean Journal of Materials Research
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• v.28 no.2
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• pp.124-128
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• 2018

N-type porous silicon (PS) layers and thermally oxidized PS layers have been characterized by various measuring techniques such as photoluminescence (PL), Raman spectroscopy, IR, HRSEM and transmittance measurements. The top surface of PS layer shows a stronger photoluminescence peak than its bottom part, and this is ascribed to the difference in number of fine silicon particles of 2~3 nm in diameter. Observed characteristics of PL spectra are explained in terms of microstructures in the n-type PS layers. Common features for both p-type and n-type PS layers are as follows: the parts which can emit visible photoluminescence are not amorphous, but crystalline, and such parts are composed of nanocrystallites of several nm's whose orientations are slightly different from Si substrate, and such fine silicon particles absorb much hydrogen atoms near the surfaces. Light emission is strongly dependent on such fine silicon particles. Photoluminescence is due to charge carrier confinement in such three dimensional structure (sponge-like structure). Characteristics of visible light emission from n-type PS can be explained in terms of modification of band structure accompanied by bandgap widening and localized levels in bandstructure. It is also shown that hydrogen and oxygen atoms existing on residual silicon parts play an important role on emission stability.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.687-688
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• 2009

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.67-68
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• 2002

The properties and mechanism of silicon protuberance and groove processing by diamond tip sliding using atomic force microscope (AFM) in atmosphere were studied. To control the height of protuberance and the depth of groove, the processed height and depth depended on load and diamond tip radius were evaluated. Nanoprotuberances and grooves were fabricated on a silicon surface by approximately 100-nm-radius diamond tip sliding using an atomic force microscope in atmosphere. To clarify the mechanical and chemical properties of these parts processed, changes in the protuberance and groove profiles due to additional diamond tip sliding and potassium hydroxide (KOH) solution etching were evaluated. Processed protuberances were negligibly removed, and processed grooves were easily removed by additional diamond tip sliding. The KOH solution selectively etched the unprocessed silicon area. while the protuberances, grooves and flat surfaces processed by diamond tip sliding were negligibly etched. Three-dimensional nanofabrication is performed in this study by utilizing these mechanic-chemically processed parts as protective etching mask for KOH solution etching.