• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.80-81
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• 2012

Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.28-32
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• 2009

Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap (3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diode is the representative high-power device that is currently available commercially. A field plate edge-terminated 4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metal contacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation of the electrical properties of the diodes. The breakdown voltage and Schottky barrier height (SBH, ${\Phi}_B$) was 107 V and 0.67 eV, respectively. To form homogeneous single-metal Ni/4H-SiC Schottky contacts, a deposition and etching method was employed, and the electrical properties of the diodes were improved. The modified SBDs showed enhanced electrical properties, as witnessed by a breakdown voltage of 635 V, a Schottky barrier height of ${\Phi}_B$=1.48 eV, an ideality factor of n=1.04 (close to one), a forward voltage drop of $V_F$=1.6 V, a specific on resistance of $R_{on}=2.1m{\Omega}-cm^2$ and a power loss of $P_L=79.6Wcm^{-2}$.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.05a
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• pp.417-420
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• 2007

Micro parts are usually used of producing by micro-electro-mechanical systems(MEMS). In this paper, we present some fundamental results concerning on the MEMS, extrusion condition on the micro forming characteristics and new micro forward extrusion machine has been developed. In the first step, we manufactured micro dies in two kinds of sections. One is a circle section, another is a cross section. The process for fabricating micro dies combines a deep UV-lithography, anisotropic etching techniques and metal electroplating with bulk silicon based on Ni with a thickness of $50{\mu}m$. The outer diameter of Ni-micro dies is 3mm and the diameter of extrusion section is $270{\mu}m$ for a cross section, $500{\mu}m$ for a circle section. The low linear density polyethylene(LLEPD) in the shape of a pellet has been used of micro extrusion. The billet was placed in a container manufactured by electric discharge machining and extruded through the micro die by a piezoelectric actuator. The micro extrusion has succeeded in a forming such micro parts as micro bars, micro cross shafts.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1839-1842
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• 1999

We have synthesized carbon nanotubes by thermal chemical vapor deposition of $C_2H_2$ on transition metal-coated silicon substrates. Carbon nanotubes are uniformly synthesized on a large area of the plain Si substrates, different from Previously reported porous Si substrates. It is observed that surface modification of transition metals deposited on substrates by either etching with dipping in a HF solution and/or $NH_3$ pretreatment is a crucial step for the nanotube growth prior to the reaction of $C_2H_2$ gas. We will demonstrate that the diameters of carbon naotubes can be controlled by applying the different transition metals.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1738-1740
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• 1999

This paper deals with a novel structure of poly-Si solar cell. A solar cell conversion efficiency was degraded by grain boundary effect in Polycrystalline silicon. To reduce grain boundary effect, we performed a preferential grain boundary etching, $POCl_3$ n-type emitter doping, and then ITO film growth on poly-Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth about $10{\mu}m$. RF magnetron sputter grown ITO films showed a low resistivity of $10^{-4}\Omega-cm$ and high transmittance of 85%. With well fabricated poly-Si solar cells. we were able to achieve as high as 15% conversion efficiency at the input power of 20mW/$cm^2$.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.2187-2191
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• 2003

In this paper, a x/y-axis accelerometer is fabricated, using the SBM process on a <111> SOI wafer. This fabrication method solves the problem of the footing phenomenon in the conventional SOI process for improved manufacturability and performance. The roughened lower parts as well as the loose silicon fragments due to the footing phenomenon are removed by the alkaline lateral etching step of the SBM process. The fabricated accelerometer has a demodulated signal-to-noise ratio of 92 dB, when 40Hz, 5 g input acceleration is applied. The noise equivalent input acceleration resolution and bandwidth are $125.59\;{\mu}g$ and over 100 Hz, respectively. The acceleration random walk is $12.5\;{\mu}g/\sqrt{Hz}$. The output linearity is measured to be 1.2 % FSO(Full Scale Output) at 40 Hz, and the input range is over ${\pm}\;10g$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.294.2-294.2
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• 2016

Graphene, a sigle atomic layered structure of graphite, has drawn many scientific interests for attractive future electronics and optoelectronics beyond silicon-based technology because of its robust physical, optical, and electrical properties. But high metal-graphene contact resistance prevents the successful integration of high speed graphene devices and circuits, although pristine graphene is known to have a novel carrier transport property. Meanwhile, in the recently reported metal-graphene contact studies, there are many attempts to reduce the metal-graphene contact resistance, such as doping and one-dimensional edge contact. However, there is a lack of quantitative analysis of the edge contact scheme through variously designed patterns with different metal contact. We first investigate the effets of edge contact (metal-graphene interface) on the contact resistance in terms of edge pattern design through patterning (photolithography + plasma etching) and electral measurements. Where the contact resistance is determined using the transfer length method (TLM). Finally, we research the role of metal-kind (Palladium, Copper, and Tianium) on the contact resistance through the edge-contacted devices, eventually minimizing contact resistance down to approximately $23{\Omega}{\cdot}{\mu}m$ at room temperature (approximately $19{\Omega}{\cdot}{\mu}m$ at 100 K).

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.51 no.9
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• pp.423-430
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• 2002

The fabrication and experimentation of multi-channel electrodes which enable detecting and recording of multi-site neuronal signals have been investigated. A multi-channel electrode array was fabricated by depositing 2000${\AA}$ thick Au layer on the 1000${\AA}$ thick Ti adhesion layer on a glass wafer. The metal paths were patterned by wet etching and passivated by depositing a PECVD silicon nitride insulation layer to prevent signals from intermixing or cross-talking. After placing a thin slice of rat cerebellar granule cell in the culture ring located in central portion of the multi-channel electrode plate, a neuronal signal from an electrode which is in contact with the cerebellar granule cell has been detected. It was found that the electrode impedance ranges 200㏀∼1㏁ and the impedance is not changed by cleaning with nitric acid. Also, the impedance is inversely proportion to the exposed electrode area and the cross-talk is negligible when the electrode spacing is bigger than 600$\mu\textrm{m}$. The amplitude and frequency of the measured action potential were 38㎷ and 2㎑, which are typical values. From the experimental results, the fabricated multi-channel electrode array proved to be suitable for multi-site neuronal signal detection for the analysis of a complicated cell network.

• Korean Journal of Materials Research
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• v.5 no.4
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• pp.397-404
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• 1995

반도체 세정공정에서 염기성 세정액(SCI, Standard cleaning 1, $NH_{4}$OH + $H_{2}$O_{2}$ + $H_{2}$O)은 공정상 발생되는 여러 오염물 중 파티클의 제거를 위해 널리 사용되고 있는데, SCI 조성중 $NH_{4}$OH양에 따라 세정 중 실리콘의 식각속도를 증가시킨다. 이 연구에서는 SCI 세정이 CZ(Czochralski)와 에피 실리콘 기판 표면에 미치는 영향을 단순세정과 연속적인 산화-HF 식각-SCI 세정공정을 통해 관찰되었다. CZ와 에피 기판을 8$0^{\circ}C$의 1 : 2 : 10과 1 : 1 : 5 SCI 용액에서 60분까지 단순 세정을 했을 때 laser particle scanner와 KLA사의 웨이퍼 검색장치로 측정된 결함의 수는 세정시간에 따라 변화를 보이지 않았다. 그러나 CZ와 에피 기판을 10분간 SCI 세정후 90$0^{\circ}C$에서 산화 HF식각공정을 4번까지 반복하였을 때 에피 기판 표면의 결함수는 감소하는 반면에 CZ기판에서는 직선적으로 증가하였다. 반복적인 산화-HF 식각-XCI 세정공정을 통해 생성된 CZ기판 표면의 결함은 크기가 0.7$\mu$m 이하의 pit과 같은 형상을 보여주었다. 이들 결함은 열처리 중 CZ 기판내와 표면에 산화 석출물들이 형성, 반복적인 HF 식각-SCI 세정공정을 통해 다른 부위에 비해 식각이 빨리 일어나 표면에 생성되는 것으로 여기어 진다.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.104-107
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• 1999

We investigated the effects of cooling condition on deep levels and iron precipitate formation in iron-contaminated p-type silicon by DLTS(Deep Level Transient Spectroscopy) and preferential etching technique. Dependency of cooling condition on Bulk Micro-Defect (BMD) and four different iron-related deep traps were observed. For normal cooling condition, T1, T2, T3, T4 traps that related to Fe\ulcorner or Fe-O complex were obtained. However, the trap with activation energy, 0.4 eV was observed for slow cooling condition. The trap caused by the $\textrm{Fe}^{+}\textrm{}^{-}$ pair (H4:0.56eV) were detected only at the case of $\textrm{LN}_{2}$ quenching condition.