Low-Angle Forward-Reflected Neutral Beam Etching을 이용한 SOI (silicon on insulator) wafer의 표면조도 향상에 관한 연구

• Min, Tae-Hong;Park, Byeong-Jae;Kim, Lee-Yeon;Gang, Se-Gu;Yeom, Geun-Yeong
• • Proceedings of the Korean Vacuum Society Conference
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  • 2009.02a
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  • pp.244.2-244.2
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  • 2009
• PDF

Effect of $O_2$ or $NF_3$ plasma treatments on contaminated silicon surface due to $CHF_{3}/C_{2}F_{6}$ reactive ion etching

• 박형호;권광호;곽병화;이상환;권오준;김보우
• • Proceedings of the Materials Research Society of Korea Conference
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  • 1992.05a
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  • pp.59-60
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  • 1992
• PDF

Protection Method of UBM during KOH anisotropic Silicon Etching (KOH 이방성 실리콘 식각용액 중에서 UBM의 보호 방법)

• Lee, Sang-Hwan;Choo, Gwan-Jong;Moon, Jong-Tae;Hwang, Nam;Song, Min-Gyu
• • Proceedings of the Materials Research Society of Korea Conference
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  • 1996.11a
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  • pp.148-148
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  • 1996
• PDF

Influence of different gas concentrations on the plasma etching mechanism for amorphous silicon thin films

• Lee, Jong-Wan;Gang, Seong-Gu;Kim, Tae-Hyeong;Kim, Cha-Yeon;Kim, Seong-Tae
• • Proceedings of the Korean Vacuum Society Conference
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  • 1994.06a
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  • pp.112-112
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  • 1994
• PDF

Effect of high-frequency variation on ArF PR deformation and silicon nitride etching by dual frequency superimposed (DFS) rf capacitive coupled plasma

• Lee, N.E.;Kim, D.H.
• • Proceedings of the Korean Vacuum Society Conference
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  • 2004.08a
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  • pp.78-78
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  • 2004
• PDF

The Structural and Optical Characteristics of the n-type Porous Silicon Prepared by Electrochemical Etching (전기화학 에칭에 의해 제조된 n-type 기공성 실리콘의 구조 및 발광 특성)

• Hwang, Seon-Jae;Kim, Dae-Am;Jo, Nam-Hui
• • Proceedings of the Korean Ceranic Society Conference
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  • 2003.10a
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  • pp.142.1-142
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  • 2003
• PDF

Characteristics of contaminated silicon surface due to CHF3/C2F6 reactive ion etching and Post etch treatments for removal of surface residue (CHF3/C2F6 반응성이온 건식식각으로 오염된 실리콘 표면의 특성과 여러 가지 후처리효과 연구)

• 박형호;권광호;곽병화;이희태;조경익
• • Proceedings of the Materials Research Society of Korea Conference
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  • 1993.05a
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  • pp.45-45
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  • 1993
• PDF

Effects of $N_2$ and NO addition of fast silicon layer chemical dry etching in $F_2/Ar$ remote plasma processing (빠른 실리콘 식각에 대한 $F_2/Ar$ 리모트 플라즈마와 $N_2$와 NO 첨가효과)

• Yun, Yeong-Bae;Park, Seong-Min;Lee, Nae-Eung
• • Proceedings of the Korean Institute of Surface Engineering Conference
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  • 2006.10a
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  • pp.73-73
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  • 2006
• PDF

Remote plasma etching of amorphous silicon using pin to plate dielectric barrier discharge (Pin to Plate Dielectric Barrier Dischrge 방식의 Romote 대기압 플라지므라르 이용한 비정질 Si 식각)

• Park, Jae-Beom;Gyeong, Se-Jin;Yeom, Geun-Yeong
• • Proceedings of the Korean Institute of Surface Engineering Conference
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  • 2006.10a
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  • pp.31-32
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  • 2006
• PDF

ELECTROCHEMICAL AND PHOTOELECTROCHEMICAL ETCHING OF N-TYPE SILICON

• Lee, Chi-Woo;Kim, Dong-Il;Kim, Buem-Suck;Min, Nam-Ki
• • Proceedings of the Materials Research Society of Korea Conference
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  • 1998.08a
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  • pp.107.3-107
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  • 1998
• PDF

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