• Title/Summary/Keyword: Silicon Pressure Sensor

Search Result 117, Processing Time 0.035 seconds

Development of the High Temperature Silicon Pressure Sensor (고온용 실리콘 압력센서 개발)

  • Kim, Mi-Mook;Nam, Tae-Chul;Lee, Young-Tae
    • Journal of Sensor Science and Technology
    • /
    • v.13 no.3
    • /
    • pp.175-181
    • /
    • 2004
  • A pressure sensor for high temperature was fabricated by using a SDB(Silicon-Direct-Bonding) wafer with a Si/$SiO_{2}$/ Si structure. High pressure sensitivity was shown from the sensor using a single crystal silicon of the first layer as a piezoresistive layer. It also was made feasible to use under the high temperature as of over $120^{\circ}C$, which is generally known as the critical temperature for the general silicon sensor, by isolating the piezoresistive layer dielectrically and thermally from the silicon substrate with a silicon dioxide layer of the second layer. The pressure sensor fabricated in this research showed very high sensitivity as of $183.6{\mu}V/V{\cdot}kPa$, and its characteristics also showed an excellent linearity with low hysteresis. This sensor was usable up to the high temperature range of $300^{\circ}C$.

Development of Pressure Monitoring System Using Silicon Pressure Sensor (실리콘 압력센서를 이용한 압력 모니터링 시스템 개발)

  • Lee, Young Tae;Kwon, Ik Hyun
    • Journal of the Semiconductor & Display Technology
    • /
    • v.17 no.4
    • /
    • pp.76-79
    • /
    • 2018
  • In this paper, we developed a pressure monitoring system using silicon pressure sensor. The pressure monitoring system was developed on the basis of a microcontroller, and a self-developed silicon pressure sensor was applied. The pressure monitoring system outputs the current pressure value via UART communication. In addition, it includes a function of displaying by LED when the preset three-step pressure (low, medium, high pressure) is reached. The silicon pressure sensor used in the pressure monitoring system was set to 0 kPa, 10 kPa, 26 kPa, and the pressure monitoring system was evaluated because the measured maximum pressure was in the range of 100 kPa.

Development of the high temperature silicon pressure sensor (고온용 실리콘 압력센서 개발)

  • Kim, Mi-Mok;Chul, Nam-Tae;Lee, Young-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.07a
    • /
    • pp.147-150
    • /
    • 2003
  • In this paper, We fabricated a high temperature pressure sensor using SBD(silicon- direct-bonding) wafer of $Si/SiO_2$/Si-sub structure. This sensor was very sensitive because the piezoresistor is fabricated by single crystal silicon of the first layer of SDB wafer. Also, it was possible to operate the sensor at high temperature over $120^{\circ}C$ which is the temperature limitation of general silicon sensor because the piezoresistor was dielectric isolation from silicon substrate using silicon dioxide of the second layer. The sensitivity of this sensor is very high as the measured result of D2200 shows $183.6\;{\mu}V/V{\cdot}kPa$. Also, the output characteristic of linearity was very good. This sensor was available at high temperature as $300^{\circ}C$.

  • PDF

Fiber-Optic Pressure Sensor Using a Rugate-Structured Porous Silicon Diaphragm Coated with PMMA (PMMA가 코팅된 주름 구조를 갖는 다공성규소 격판을 이용한 광섬유 압력센서)

  • Lee, Ki-Won;Cho, So-Yeon
    • Journal of Sensor Science and Technology
    • /
    • v.22 no.3
    • /
    • pp.227-232
    • /
    • 2013
  • In this research, fiber-optic pressure sensors were fabricated with rugate-structured porous silicon (RPS) diaphragms coated with PMMA (Polymethyl-Methacrylate). The reflectance spectrum of the PMMA/RPS diaphragm was almost the same as that of uncoated RPS diaphragm. However the mechanical strength of the PMMA/RPS diaphragm increased more than that of the uncoated diaphragm. As a result, the fiber-optic sensor fabricated with PMMA/RPS diaphragm could successfully detect more high pressure difference without diaphragm damage than the highest detectable pressure difference of the sensor with normal RPS diaphragm. The response data of the fiber-optic sensor recorded as a function of pressure difference were fitted by theoretical curves. During this process, elastic moduli of the used PMMA/RPS diaphragms were obtained numerically. The dynamic response properties of the fiber-optic sensor were also investigated under continuous variation of the pressure difference conditions.

High Temperature Silicon Pressure Sensor of SDB Structure (SDB 구조의 고온용 실리콘 압력센서)

  • Park, Jae-Sung;Choi, Deuk-Sung;Kim, Mi-Mok
    • Journal of the Institute of Electronics and Information Engineers
    • /
    • v.50 no.6
    • /
    • pp.305-310
    • /
    • 2013
  • In this paper, the pressure sensor usable in a high temperature, using a SDB(silicon-direct-bonding) wafer of Si/$SiO_2$/Si-sub structure was provided and studied the characteristic thereof. The pressure sensor produces a piezoresistor by using a single crystal silicon as a first layer of SDB wafer, to thus provide a prominent sensitivity, and dielectrically isolates the piezoresistor from a silicon substrate by using a silicon dioxide layer as a second layer thereof, to be thus usable even under the high temperature over $120^{\circ}C$ as a limited temperature of a general silicon sensor. The measured result for a pressure sensitivity of the pressure sensor has a characteristic of high sensitivity, and its tested result for an output of the sensor further has a very prominent linearity and hysteresis characteristic.

Development of a Micro-pressure Sensor with high-resisting Pressure for Military Applications (군수용 고내압을 가지는 마이크로 압력센서의 개발)

  • Shim, Joon-Hwan;Seo, Chang-Taeg;Lee, Jong-Hyun
    • Proceedings of the Korean Society of Marine Engineers Conference
    • /
    • 2005.06a
    • /
    • pp.1016-1021
    • /
    • 2005
  • A piezoresistive pressure sensor using a silicone rubber membrane has been fabricated on the selectively diffused (100)-oriented n/n+/n silicon substrates by a unique silicon micromachining technique using porous silicon ething. The width, length and thickness of the beam were 120${\mu}m$, 600${\mu}m$ and 7${\mu}m$, respectively and the thickness of the silicone rubber membrane was 40${\mu}m$. By the fusion of silicon beam and silicone rubber membrane, the mechanical strength of the pressure sensor could be highly improved due to smaller shear stress. The effectiveness of the sensor was confirmed through an experiment and FEM simulation in which the pressure sensor was characterized.

  • PDF

Characteristics silicon pressure sensor using dry etching technology (건식식각 기술 이용한 실리콘 압력센서의 특성)

  • Woo, Dong-Kyun;Lee, Kyung-Il;Kim, Heung-Rak;Suh, Ho-Cheol;Lee, Young-Tae
    • Journal of Sensor Science and Technology
    • /
    • v.19 no.2
    • /
    • pp.137-141
    • /
    • 2010
  • In this paper, we fabricated silicon piezoresistive pressure sensor with dry etching technology which used Deep-RIE and etching delay technology which used SOI(silicon-on-insulator) wafer. We improved pressure sensor offset and its temperature dependence by removing oxidation layer of SOI wafer which was used for dry etching delay layer. Sensitivity of the fabricated pressure sensor was about 0.56 mV/V${\cdot}$kPa at 10 kPa full-scale, and nonlinearity of the fabricated pressure sensor was less than 2 %F.S. The zero off-set change rate was less than 0.6 %F.S.

Design and Fabrication of Capacitive Pressure Sensor (용량형 압력센서의 설계 및 제작)

  • 이승준;김병태;권영수;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2000.07a
    • /
    • pp.561-564
    • /
    • 2000
  • Silicon capacitive pressure sensor has been fabricated by using electrochemical etching stop and silicon-to-glass electrostatic bonding technique. A diaphragm structure is designed to compensate the nonlinear response. A cavity is etched into the silicon to the depth of 2$\mu\textrm{m}$ by anisotropic etching in 20wt.% TMAH solution at 80$^{\circ}C$. A fabricated sensor showed 3.3 pF zero-pressure capacitance, 297 pp.m/mmHg sensitivity, and a 7.4 7%F.S. nonlinear response in a 0-1 kgf/cm$^2$pressure range.

  • PDF

Flip-Chip Package of Silicon Pressure Sensor Using Lead-Free Solder (무연솔더를 이용한 실리콘 압력센서의 플립칩 패키지)

  • Cho, Chan-Seob
    • Journal of the Korean Society of Industry Convergence
    • /
    • v.12 no.4
    • /
    • pp.215-219
    • /
    • 2009
  • A packaging technology based on flip-chip bonding and Pb-free solder for silicon pressure sensors on printed circuit board (PCB) is presented. First, the bump formation process was conducted by Pb-free solder. Ag-Sn-Cu solder and the pressed-screen printing method were used to fabricate solder bumps. The fabricated solder bumps had $189-223{\mu}m$ width, $120-160{\mu}m$ thickness, and 5.4-6.9 standard deviation. Also, shear tests was conducted to measure the bump shear strength by a Dage 2400 PC shear tester; the average shear strength was 74 g at 0.125 mm/s of test speed and $5{\mu}m$ shear height. Then, silicon pressure sensor packaging was implemented using the Pb-free solder and bump formation process. The characteristics of the pressure sensor were analogous to the results obtained when the pressure sensor dice are assembled and packaged using the standard wire-bonding technique.

  • PDF

An Integrated Sensor for Pressure, Temperature, and Relative Humidity Based on MEMS Technology

  • Won Jong-Hwa;Choa Sung-Hoon;Yulong Zhao
    • Journal of Mechanical Science and Technology
    • /
    • v.20 no.4
    • /
    • pp.505-512
    • /
    • 2006
  • This paper presents an integrated multifunctional sensor based on MEMS technology, which can be used or embedded in mobile devices for environmental monitoring. An absolute pressure sensor, a temperature sensor and a humidity sensor are integrated in one silicon chip of which the size is $5mm\times5mm$. The pressure sensor uses a bulk-micromachined diaphragm structure with the piezoresistors. For temperature sensing, a silicon temperature sensor based on the spreading-resistance principle is designed and fabricated. The humidity sensor is a capacitive humidity sensor which has the polyimide film and interdigitated capacitance electrodes. The different piezoresistive orientation is used for the pressure and temperature sensor to avoid the interference between sensors. Each sensor shows good sensor characteristics except for the humidity sensor. However, the linearity and hysteresis of the humidity sensor can be improved by selecting the proper polymer materials and structures.