Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
권호 표지

Development of Pressure Monitoring System Using Silicon Pressure Sensor

실리콘 압력센서를 이용한 압력 모니터링 시스템 개발

  • Lee, Young Tae (Dept. of Bio-ICT Engineering, Andong National University) ;
  • Kwon, Ik Hyun (Dept. of Bio-ICT Engineering, Andong National University)
  • 이영태 (안동대학교 바이오 ICT융합공학과) ;
  • 권익현 (안동대학교 바이오 ICT융합공학과)
  • Received : 2018.12.12
  • Accepted : 2018.12.19
  • Published : 2018.12.31
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, we developed a pressure monitoring system using silicon pressure sensor. The pressure monitoring system was developed on the basis of a microcontroller, and a self-developed silicon pressure sensor was applied. The pressure monitoring system outputs the current pressure value via UART communication. In addition, it includes a function of displaying by LED when the preset three-step pressure (low, medium, high pressure) is reached. The silicon pressure sensor used in the pressure monitoring system was set to 0 kPa, 10 kPa, 26 kPa, and the pressure monitoring system was evaluated because the measured maximum pressure was in the range of 100 kPa.

Keywords

References

  1. Pramanik, C., Saha, H., and Gangopadhyay, U. "Design optimization of a high performance silicon MEMS piezoresistive pressure sensor for biomedical application," Journal of Micromechanics and Microengineering, Vol.16, No.10, pp. 2060-2066, 2006. https://doi.org/10.1088/0960-1317/16/10/019
  2. Chang, S.P., and Allen, Mark G. "Capacitive pressure sensors with stainless steel diaphragm and substrate," J. of Micromecjanics and Microengineering, Vol. 14, No. 4, pp. 612-618, 2004. https://doi.org/10.1088/0960-1317/14/4/023
  3. Lei, K. Foung, Lee, K.F., and Lee, M.Y. "Development of a flexible PDMS capacitive pressure sensor for plantar pressure measurement," Microelectronic Engineering, Vol.99, pp. 1-5, 2012. https://doi.org/10.1016/j.mee.2012.06.005
  4. Park, C.Y., Kweon, H.K., and Jun, Z.Z. "Research for design and characteristic interpretation of capacitive pressure sensor structure," Journal of the Semiconductor & Display Technology, Vol.14, No.2, pp.1-7, 2015.
  5. Tufte, O.N., Chapman, P.W., and Long, D. "Silicon diffused element piezorsistor diaphragm," J. Appl Phys., Vol. 22, pp. 3321-3327, 1962.
  6. Tabata, O., Asahi, R., Funabshi, H., and Sugiyama, S. "Anisotropic silicon etching using (CH3)4NOH," Transducers'91, SanFrancisco, CA, USA, Jun 24-28, pp.811-814, 1991.
  7. Kanda, Y. "A graphical representation of the piezoresistance coefficients in silicon," IEEE Trans. Electron Devies, ED-29, pp. 64-70, 1982.
  8. Bao, M., and Wang, Y. "Analysis and design of a four-terminal silicon pressure sensor at the center of diaphragm," Sensors and Actuators, Vol.12, pp. 49-56, 1987. https://doi.org/10.1016/0250-6874(87)87005-1
  9. Lee, Y.T., Seo, H.D., Kawamura, A., Matsumoto, Y., Ishida, M., and Nakamura, T. "The influence of offset on silicon piezoresistive pressure sensor and its compensation using double wheatstone-bridge configuration," Proc. of the 5th Conf. on Sensors Tech., Taejen, Korea, pp. 62-69, 1994.