• Bulletin of the Korean Chemical Society
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• 제32권8호
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• pp.2560-2564
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• 2011

Mesoporous silicon dioxide (meso-$SiO_2$) was prepared using cetyltrimethylammonium bromide as the structure-directing reagent and tetraethyl orthosicate as the silicon source. The influence of pH value on the adsorption behavior of bisphenol A (BPA) was investigated. The adsorption capacity of BPA onto meso-$SiO_2$ increases slightly with pH value from 2 to 6, and then gradually decreases as further improving pH value. The effect of temperature was also studied, and the adsorption capacity of BPA gradually declines with increasing temperature. The adsorption kinetics and thermodynamics of BPA were examined. It is found that the adsorption of BPA onto meso-$SiO_2$ is in good agreement with Langmuir adsorption model. The rate constant of adsorption is $5.17{\times}10^{-3}g\;mg^{-1}\;min^{-1}$, and the maximum adsorption capacity is as high as 353.4 $mg\;g^{-1}$ at 20 $^{\circ}C$.

• 유기물자원화
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• 제31권3호
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• pp.35-41
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• 2023

본 연구에서는 반도체 제조공정에서 발생하는 실리콘 슬러지에 금속산화물인 이산화티타늄을 코팅하였으며, 이를 안료 및 도료의 소재로 응용하였다. 상세히는, 불순물이 제거된 판상형의 실리콘 슬러지 분말에 졸-겔법을 통해 이산화티타늄을 코팅하였다. 안료 및 도료의 소재로서 응용 가능성을 확인하기 위해서 친수성 투명 코팅제에 분산하여 페인트를 제조한 후 유리 기판에 분사하였다. 그 결과, 이산화티타늄의 도입으로 인한 발림성 향상과 하얀색의 발현을 확인할 수 있었다. 본 연구를 통해서 실리콘 슬러지에 이산화티타늄을 코팅함으로써 발림성 및 친수성이 향상됨을 확인하였으며, 이를 통해서 반도체 공정에서 발생하는 실리콘 슬러지가 안료 및 도료의 소재로서 응용 가능성을 확인하였다.

• 전기의세계
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• 제32권10호
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• pp.616-625
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• 1983

본고에서는 PECVD의 기본원리와 장치를 간단히 설명한 후, 현재까지 PECVD법에 의해 형성된 박막중 반도체소자에의 적용을 위해 광범위하게 연구개발이 진행되고 있는 plasma silicon nitride (이하 PD SiN)와 plasma silicon dioxide (or oxide) (이하 PD SiO$_{2}$)막의 특성에 대해 현재까지의 연구결과를 중심으로 PECVD막의 성질을 고찰하고, 반도체 소자에의 응용을 검토한다.

• 한국광학회:학술대회논문집
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• 한국광학회 1997년도 Advance Program of 14th optics andquantum Electronics conference, 1997제14 회 광학 및 양자전자 학술 발표회 논문 요약집
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• pp.15-15
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• 1997

• Journal of Ceramic Processing Research
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• 제23권4호
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• pp.535-540
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• 2022

Atmospheric pressure plasma (APP) systems operate at atmospheric pressure and low temperatures, eliminating the need forvacuum systems such as vacuum chambers and pumps. In this paper, we studied that silicon dioxide thin films were formedat room temperature (25 oC) and 400 oC by APP processes on silicon wafers. A mixture of hexamethyldisilazane, oxygen,helium, and argon was supplied to the plasma apparatus to form the SiO2 layer. It was observed that a heat insulating layerhaving a thickness of about 22 nm at 25 oC and about 75 nm at 400 oC was formed. Although the surface was clean in samplestreated at 400 oC, small grains were observed in samples processed at room temperature. However, no void or defect in allsamples is observed inside the thin film from the surface. The physical property of the SiO2 thin film carried out by measuringrefractive index and density. The experimental refractive index of silicon dioxide grown by applying heat can be fitted to theSellmeier equation. Also, the film density of the sample at 400 oC using a XRR was observed to be 2.25 g/cm3, similar to thatof the glass, but that of the sample treated at room temp. was very low at 1.68 g/cm3. We also investigated the voltagedependentcurrent change in the oxide material. The SiO2 layer coated at room temperature showed a breakdown electricalfield of 2.5 MV/cm, while oxides deposited at 400 oC showed a characteristic of 9.9 MV/cm.

• Journal of Electrochemical Science and Technology
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• 제12권3호
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• pp.317-322
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• 2021

Silicon (Si) has been considered as a promising anode material because of its abundant reserves in nature, low lithium ion (Li⁺) intercalation/de-intercalation potential (below 0.5 V vs. Li/Li⁺) and high theoretical capacity of 4200 mA h/g. In this paper, we prepared a silicon-based (Si-based) anode material containing a small amount of silicon carbide by using magnesiothermic coreduction of silica and hexachlorobenzene. Because of good conductivity of silicon carbide, the cycle performance of the silicon-based anode materials containing few silicon carbide is greatly improved compared with pure silicon. The raw materials were formulated according to a silicon-carbon molar ratio of 10:0, 10:1, 10:2 and 10:3, and the obtained products were purified and tested for their electrochemical properties. After 1000 cycles, the specific capacities of the materials with silicon-carbon molar ratios of 10:0, 10:1, 10:2 and 10:3 were still up to 412.3 mA h/g, 970.3 mA h/g, 875.0 mA h/g and 788.6 mA h/g, respectively. Although most of the added carbon reacted with silicon to form silicon carbide, because of the good conductivity of silicon carbide, the cycle performance of silicon-based anode materials was significantly better than that of pure silicon.

• 센서학회지
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• 제30권4호
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• pp.250-254
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• 2021

A highly sensitive and selective non-dispersive infrared (NDIR) carbon dioxide gas sensor requires achieving high transmittance and narrow full width at half maximum (FWHM), which depends on the interface of the optical filter for precise measurement of carbon dioxide concentration. This paper presents the design, simulation, and fabrication of a Fabry-Perot filter based on a distributed Bragg reflector (DBR) for a low-cost NDIR carbon dioxide sensor. The Fabry-Perot filter consists of upper and lower DBR pairs, which comprise multilayered stacks of alternating high- and low-index thin films, and a cavity layer for the resonance of incident light. As the number of DBR pairs inside the reflector increases, the FWHM of the transmitted light becomes narrower, but the transmittance of light decreases substantially. Therefore, it is essential to analyze the relationship between the FWHM and transmittance according to the number of DBR pairs. The DBR is made of silicon and silicon dioxide by RF magnetron sputtering on a glass wafer. After the optimal conditions based on simulation results were realized, the DBR exhibited a light transmittance of 38.5% at 4.26 ㎛ and an FWHM of 158 nm. The improved results substantiate the advantages of the low-cost and minimized process compared to expensive commercial filters.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.147-150
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• 2003

In this paper, We fabricated a high temperature pressure sensor using SBD(silicon- direct-bonding) wafer of $Si/SiO_2$/Si-sub structure. This sensor was very sensitive because the piezoresistor is fabricated by single crystal silicon of the first layer of SDB wafer. Also, it was possible to operate the sensor at high temperature over $120^{\circ}C$ which is the temperature limitation of general silicon sensor because the piezoresistor was dielectric isolation from silicon substrate using silicon dioxide of the second layer. The sensitivity of this sensor is very high as the measured result of D2200 shows $183.6\;{\mu}V/V{\cdot}kPa$. Also, the output characteristic of linearity was very good. This sensor was available at high temperature as $300^{\circ}C$.

• 센서학회지
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• 제13권3호
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• pp.175-181
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• 2004

A pressure sensor for high temperature was fabricated by using a SDB(Silicon-Direct-Bonding) wafer with a Si/$SiO_{2}$/ Si structure. High pressure sensitivity was shown from the sensor using a single crystal silicon of the first layer as a piezoresistive layer. It also was made feasible to use under the high temperature as of over $120^{\circ}C$, which is generally known as the critical temperature for the general silicon sensor, by isolating the piezoresistive layer dielectrically and thermally from the silicon substrate with a silicon dioxide layer of the second layer. The pressure sensor fabricated in this research showed very high sensitivity as of $183.6{\mu}V/V{\cdot}kPa$, and its characteristics also showed an excellent linearity with low hysteresis. This sensor was usable up to the high temperature range of $300^{\circ}C$.

• 반도체디스플레이기술학회지
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• 제4권3호
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• pp.1-4
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• 2005

Silicon oxynitride films were deposited using ammonia as a nitrogen source via PECVD (plasma enhanced chemical vapor deposition) to study the physical properties of the films. Silane and nitrous oxide were used as silicon and oxygen sources, respectively. The composition of the silicon oxynitride films was well controlled by changing the ratios of the sources and confirmed by XPS. The silicon oxynitride films with high oxygen content showed bigger compressive stress and less refractive index, while the values of surface roughness were around 1 nm, irrespective of the variation of the source ratios.