• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.04a
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• pp.215-219
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• 1996

We developed a part of hydraulic stroke sensing cylinder for te purpose of position controlbyusing magnetic sensor and evaluated variously its performance its performance. In this paper, for the evaluation of the developed cylinder under various temperature change, thermal control systems are designed and controlled. It is composed of an heater case, temperature sensor, and interface circuits which included SCR(silicon controlled rectifier) for the control of the voltage's phase. To obtain various temperature conditions, the thermal systems are controlled by using Ziegler-Nichols PED tuning method. The thermalcontrol systems are used to experiment to evaluate whether the developed cylinder can obtain a stable output signal for detecting a stroke of the cylinder under the controlled temperature condition.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.589-590
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• 2006

A novel Triple-Well P-type Triggered Silicon Controlled Rectifier (TWPTSCR) for on-chip ESD protection implemented with a triple-well CMOS technology is presented. Unlike conventional SCR devices, the proposed TWPTSCR offers a reduced triggering voltage level as well as the enhanced ESD performance of the SCR devices. From the experimental results, the TWPTSCR with a device width of 20um has the triggering voltage of 1.1V.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.587-588
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• 2006

This paper presents the new structural zener triggered silicon-controlled rectifier (ZTSCR) electrostatic discharge (ESD) protection circuit. The proposed ESD protection circuit has lower triggering voltage than conventional circuits. The proposed ZTSCR has the triggering voltage of 4V. In the ESD event, this proposed novel ZTSCR ESD protection device could trigger quickly and provide an effective discharging path.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.797-801
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• 2014

This research presented the concept of employing the punch-through diode triggered SCRs (PTTSCR) for low voltage ESD applications such as transient voltage suppression (TVS) devices. In order to demonstrate the better electrical properties, various traditional ESD protection devices, including a silicon controlled rectifier (SCR) and Zener diode, were simulated and analyzed by using the TCAD simulation software. The simulation result demonstrates that the novel PTTSCR device has better performance in responding to ESD properties, including DC dynamic resistance and capacitance, compared to SCR and Zener diode. Furthermore, the proposed PTTSCR device has a low reverse leakage current that is below $10^{-12}$ A, a low capacitance of $0.07fF/mm^2$, and low triggering voltage of 8.5 V at $5.6{\times}10^{-5}$ A. The typical properties couple with the holding voltage of 4.8 V, while the novel PTTSCR device is compatible for protecting the low voltage, high speed ESD protection applications. It proves to be good candidates as ultra-low capacitance TVS devices.

• Journal of IKEEE
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• v.18 no.1
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• pp.25-30
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• 2014

In this paper, SCR(Silicon Controlled Rectifier)-based ESD(Electrostatic Discharge) protection circuit for power clamp is proposed. In order to improve latch-up immunity caused by low holding voltage of the conventional SCR, it is modified by inserting n+ floating region and n-well, and extending p+ cathode region in the p-well. The resulting ESD capability of our proposed ESD protection circuit reveals a high latch-up immunity due to the high holding voltage. It is verified that electrical characteristics of proposed ESD protection circuit by Synopsys TCAD simulation tool. According to the simulation results, the holding voltage is increased from 4.61 V to 8.75 V while trigger voltage is increased form 27.3 V to 32.71 V, respectively. Compared with the conventional SCR, the proposed ESD protection circuit has the high holding voltage with the same triggering voltage characteristic.

• Journal of IKEEE
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• v.17 no.2
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• pp.208-213
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• 2013

In this paper, we proposed the novel SCR-based ESD protection circuit with high holding voltage for power clamp. In order to increase the holding voltage, the floating p+ and n+ to n-well and p-well, respectively, in the conventional SCR. The resulting increase of the holding voltage of the our proposed ESD circuit enables the high latch-up immunity. The electrical characteristics including ESD robustness of the proposed ESD circuit have been simulated using Synopsys TCAD simulator. According to the simulation result, the proposed device has higher holding voltage of 4.98 V than that of the conventional SCR protection circuit. Moreover, it is confirmed that the device could have the holding voltage of maximum 13.26 V with the size variation of floated diffusion area.

• Journal of Satellite, Information and Communications
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• v.11 no.4
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• pp.27-32
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• 2016

A conventional double diffused drain n-type MOSFET (DDD_NMOS) device shows SCR behaviors with very low snapback holding voltage and latch-up problem during normal operation. However, a modified DDD_NMOS-based silicon controlled rectifier (DDD_NSCR_CPS) device with a counter pocket source (CPS) structure is proven to increase the snapback holding voltage and on-resistance compare to standard DDD_NSCR device, realizing an excellent electrostatic discharge protection performance and the stable latch-up immunity.

• 제어로봇시스템학회:학술대회논문집
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• 1996.10b
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• pp.636-639
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• 1996

We have developed a part of hydraulic stroke sensing cylinder using magnetic sensor that can detect each position under severe construction fields. In this paper, for evaluating the developed cylinder under various environment condition, thermal control systems and two hydraulic systems to be coupled consist of. The former is composed of an heater case, temperature sensor, and interface circuits which include SCR(silicon controlled rectifier) for the control of the voltage's phase. The latter is composed of an hydraulic cylinder for position control with solenoid valve (ON/OFF motion) and a load cylinder with proportional reducing valve. To obtain the various performance evaluation, it is carried out under high temperature condition in thermal system controlled by using Ziegler-Nichols PID tuning method and artificial disturbances such as impulse or constant force. The results show that the developed cylinder has good performance under the various environment condition.

• Journal of Satellite, Information and Communications
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• v.10 no.4
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• pp.6-11
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• 2015

The ESD(electrostatic discharge) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different GPNS(Gate to Primary $N^+$ Diffusion Space) structure was discussed for high voltage I/O applications. A conventional NSCR_PPS standard device with FPW(Full P-Well) structure and non-CPS(Counter Pocket Source) implant shows typical SCR-like characteristics with low on-resistance(Ron), low snapback holding voltage(Vh) and low thermal breakdown voltage(Vtb), which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified PPW(Partial P-Well) structure and optimal CPS implant demonstrate the improved ESD protection performance as a function of GPNS variation. GPNS was a important parameter, which is satisfied design window of ESD protection device.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.31-35
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• 2006

This paper is studied on a protective control system for electrical fire used electrical characteristics of SCR and multilayer-type PTC thermistor. The PTC thermistor has characteristic or positive resistivity temperature coefficient according to the temperature variation, which is construction of a regular square and cube demarcation with $BaTiO_{3_}$Ceramics of positive temperature coefficient. Also PTC shows the phenomenon which is rapidly increased in the resistivity if the temperature is increased over Curie temperature point. This paper is proposed on a protective control system used multilayer-type PTC which is protected from electrical fire due to electric short circuit faults or overload faults. Some experimental results of the proposed apparatus is confirmed to the validity of the analytical results.