• Journal of Welding and Joining
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• v.28 no.6
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• pp.40-44
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• 2010

Laser assisted machining (LAM) has been researched in order to machine the silicon nitride ceramics economically and effectively. LAM is an effective machining method by local heating of the cutting part to the softening temperature of the silicon nitride using laser beam. When silicon nitride ceramics is heated using a laser beam, the surface of silicon nitride ceramic is softened, oxidized and decomposed. And then surface hardness is decreased. Through machining in low viscosity and hardness conditions, silicon nitride was machined effectively and the life span of tool was increased. The plastic deformation was occurred due to softening of amorphous YSiAlON above $ 1,000^{\circ}C$. Transgranular fracture of ${\beta}-Si_3N_4$ was occurred when YSiAlON was not softened, but mostly intergranular fracture was occurred by the plastic deformation of softened YSiAlON.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.201-204
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• 2001

In this paper, for modeling of electrical characteristics in Poly Silicon Thin Film Transistors with process parameters set up optimum values, So, the I-V characteristics of poly silicon TFT parameters are examined and simulated in terms of the variations in process parameter. And these results compared and analyzed simulation values with examination value. The simulation program for characteristic analysis used SUPREM IV for processing, Matlab for modeling by mathematics, and SPICE for electric characteristic of devices. Input parameter for simulation characteristics is like condition of device process sequence, these electric characteristic of $I_D-V_D$ $I_D-V_G$, variations of grain size. The Gate oxide thickness of poly silicon are showed similar results between real device characteristics and simulation characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.201-204
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• 2001

In this paper, for modeling of electrical characteristics in Poly Silicon Thin Film Transistors with process parameters set up optimum values. So, the I-V characteristics of poly silicon TFT parameters are examined and simulated in terms of the variations in process parameter. And these results compared and analyzed simulation values with examination value. The simulation program for characteristic analysis used SUPREM IV for processing, Matlab for modeling by mathematics, and SPICE for electric characteristic of devices. Input parameter for simulation characteristics is like condition of device process sequence, these electric characteristic of I$_{D}$-V$_{D}$, I$_{D}$-V$_{G}$, variations of grain size. The Gate oxide thickness of poly silicon are showed similar results between real device characteristics and simulation characteristics.ristics.

• Journal of IKEEE
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• v.27 no.4
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• pp.630-635
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• 2023

SiC is replacing the position of silicon in the power semiconductor field due to its superior resistance to adverse conditions such as high temperature and high voltage compared to silicon, which occupies the majority of existing industrial fields. In this paper, the gate of 4H-SiC Planar MOSFET, one of the power semiconductor devices, was formed with aluminium to make the contrast and parameter values consistent with polycrystalline Si gate, and the threshold voltage, breakdown voltage, and IV characteristics were studied by varying the channel doping concentration of SiC MOSFET.

• Journal of the Korean Solar Energy Society
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• v.39 no.1
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• pp.1-9
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• 2019

Light induced degradation is one of the major research challenges of hydrogenated amorphous silicon related thin film silicon solar cells. Amorphous silicon shows creation of metastable defect states, originating from elevated concentration of dangling bonds during light exposure. The metastable defect states work as recombination centers, and mostly affects quality of intrinsic layer in solar cells. In this paper we present results of light induced degradation in thin film silicon solar cells and discussion on physical origin, mechanism and practical solutions of light induced degradation in thin film silicon solar cells. In-situ light-soaking IV measurement techniques are presented. We also present thin film silicon material with silicon nano-quantum dots embedded within amorphous matrix, which shows superior stability during light-soaking. Our results suggest that solar cell using silicon nano-quantum dots in abosrber layer shows superior stability under light soaking, compared to the conventional amorphous silicon solar cell.

• Resources Recycling
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• v.28 no.2
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• pp.54-61
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• 2019

In order to recover pure alumina from black dross, leaching of mechanically activated black dross with NaOH solution resulted in an aluminate solution containing a small amount of Si(IV). Selective adsorption of Si(IV) onto hydrotalcite was investigated from 5 M NaOH solution where the concentration of Al(III) and Si(IV) was 13000 and 150 mg/L, respectively. Only Si(IV) was selectively loaded onto hydrotalcite, while Al(III) remained in the solution. Effect of the calcination treatment of hydrotalcite and concentration of calcined hydrotalcite and NaOH on the loading of Si(IV) was investigated. Although the loading percentage of Si(IV) was low from 5 M NaOH solution, most of the Si(IV) was removed by adjusting the concentration of NaOH by 48 times dilution with water when the concentration of calcined hydrotalcite was higher than 4.5 g/L. The loading of Si(IV) onto calcined hydrotalcite followed Freundlich adsorption isotherm.

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.16-19
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• 2011

The oxide-nitride-oxide (ONO) deposition process was added to the beginning of a 0.25 ${\mu}m$ embedded polysiliconoxide-nitride-oxide-silicon (SONOS) process before all of the logic well implantation processes in order to maintain the characteristics of basic CMOS(complementary metal-oxide semiconductor) logic technology. The system subsequently suffered severe ONO rupture failure. The damage was caused by the ONO implantation and was responsible for the ONO rupture failure in the embedded SONOS process. Furthermore, based on the experimental results as well as an implanted ion's energy loss model, processes primarily producing permanent displacement damages responsible for the ONO rupture failure were investigated for the embedded SONOS process.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.128.2-128.2
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• 2011

스테인레스 스틸 유연기판 위에 플라즈마 화학기상 증착법 (plasma enhanced chemical vapor deposition)을 이용하여 nip 구조의 미세결정질 실리콘 박막 태양전지 (microcrystalline silicon thin film solar cell)를 제조하고 i ${\mu}c$-Si:H광 흡수층과 p ${\mu}c$-Si:H 사이에 i a-Si:H 버퍼 층을 삽입하여 i/p 계면특성을 개선하고 이에 따른 태양전지 성능특성 변화를 조사하였다. ${\mu}c$-Si:H 박막으로 이루어진 i/p 계면에서의 구조적, 전기적 결함은 태양전지 내에서 생성된 캐리어의 재결합과 shunt resistance 감소를 초래하여 개방전압 (open circuit voltage) 및 곡선 인자 (fill factor)를 감소시키는 것으로 알려졌다. 제조된 미세결정질 실리콘 박막 태양전지는 SUS/Ag/ZnO:Al/n ${\mu}c$-Si:H/i ${\mu}c$-Si:H/p ${\mu}c$-Si:H 구조로 제작되었으며 i/p 계면 사이의 i a-Si;H 버퍼층 두께를 변화시키고 이에 따른 태양전지의 특성을 조사하였다. 태양전지의 구조적, 전기적 특성 변화는 Scanning Electron Microscope (SEM), UV-visible-nIR spectrometry, Photo IV와 Dark IV를 통하여 조사하였다.

• Archives of Reconstructive Microsurgery
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• v.12 no.1
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• pp.1-12
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• 2003

The bridging of nerve gaps is still one of the major problems in peripheral nerve surgery. To evaluate the role of silicon tube in nerve regeneration, gaps were made by resection of tibial components of sciatic nerves of twenty-five New Zealand rabbits. The gaps were divided into five groups. In group I, the tibial components of sciatic nerves were isolated and the incision immediately closed. In group II, 1-cm segments of the nerve were removed and the silicon tubes filled with autogenous skeletal muscle were sutured in place. In group III, 1-cm segments of the nerve were removed and the silicon tubes filled without muscle were sutured in place. In group IV, 2-cm segments of the nerve were removed and the silicon tubes filled with autogenous skeletal muscle were sutured in place. In group V, 2-cm segments of the nerve were removed and the silicon tubes filled without muscle were sutured in place. At 16th week, the eletromyography, the light and transmission electron microscopy were performed. Nerve conduction study stimulating sciatic nerve proximal to the lesion and recording at gastrocnemius muscle showed that the compound muscle action potentials of the group II with 1 cm nerve defect filled with muscle were higher amplitudes than the group III without muscle. Compound muscle action potentials of the group IV with 2 cm defect filled with muscle showed similar results in comparison with the group V. The light and transmission electron microscpy showed that a good morphological pattern of nerve regeneration in 1 cm gap than 2 cm and in gap with muscle than gap without muscle.

• Journal of the Korea institute for structural maintenance and inspection
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• v.13 no.6 s.58
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• pp.135-147
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• 2009

In order to develop the ultra high strength concrete over 400Mpa at 28 day, Low-heat portland cement, ferro-silicon, silica-fume and steel fiber were mixed and tested under the special autoclave curing conditions. Considering the influence of Ultra high strength concrete. normal concrete is used as a comparison with low water-cement ratio possible Low-heat portland cement. Additionally, as a substitution of aggregates, we analyzed the compressive strength of Ferro Silicon by making the states of mixed and curing conditions differently. In addition, SEM films testified the development of C-S-H hydrates of Type III & Type IV, and tobermolite, zonolite due to the high temperature, high pressure of autoclave curing. Fineness of aggregate, filler and reactive materials in concrete caused 420Mpa compressive strength at 28day successfully.