Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Modeling of Electrical Characteristics in Poly Silicon Thin Film Transistor with Process Parameter

다결정 실리콘 박막 트랜지스터에서 공정 파라미터에 따른 전기적 특성의 모델링

  • 정은식 (동의대학교 전자공학과) ;
  • 최영식 (동의대학교 전자공학과) ;
  • 이용재 (동의대학교 전자공학과)
  • Published : 2001.11.08
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Abstract

In this paper, for modeling of electrical characteristics in Poly Silicon Thin Film Transistors with process parameters set up optimum values, So, the I-V characteristics of poly silicon TFT parameters are examined and simulated in terms of the variations in process parameter. And these results compared and analyzed simulation values with examination value. The simulation program for characteristic analysis used SUPREM IV for processing, Matlab for modeling by mathematics, and SPICE for electric characteristic of devices. Input parameter for simulation characteristics is like condition of device process sequence, these electric characteristic of $I_D-V_D$ $I_D-V_G$, variations of grain size. The Gate oxide thickness of poly silicon are showed similar results between real device characteristics and simulation characteristics.

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