Journal of the Korean Solar Energy Society (한국태양에너지학회 논문집)

The Korean Solar Energy Society (한국태양에너지학회)
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Study of Light-induced Degradation in Thin Film Silicon Solar Cells: Hydrogenated Amorphous Silicon Solar Cell and Nano-quantum Dot Silicon Thin Film Solar Cell

박막 실리콘 태양전지의 광열화현상 연구: 비정질 실리콘 태양전지 및 나노양자점 실리콘 박막 태양전지

  • Kim, Ka-Hyun (Division of Energy & Optical Technology Convergence, Cheongju University)
  • 김가현 (청주대학교 에너지광기술융합학부)
  • Received : 2019.01.17
  • Accepted : 2019.01.29
  • Published : 2019.02.28
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Abstract

Light induced degradation is one of the major research challenges of hydrogenated amorphous silicon related thin film silicon solar cells. Amorphous silicon shows creation of metastable defect states, originating from elevated concentration of dangling bonds during light exposure. The metastable defect states work as recombination centers, and mostly affects quality of intrinsic layer in solar cells. In this paper we present results of light induced degradation in thin film silicon solar cells and discussion on physical origin, mechanism and practical solutions of light induced degradation in thin film silicon solar cells. In-situ light-soaking IV measurement techniques are presented. We also present thin film silicon material with silicon nano-quantum dots embedded within amorphous matrix, which shows superior stability during light-soaking. Our results suggest that solar cell using silicon nano-quantum dots in abosrber layer shows superior stability under light soaking, compared to the conventional amorphous silicon solar cell.

Keywords

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Fig. 1 Change of matching capacitance, Cload as a function of working pressure of silicon thin film deposition

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Fig. 2 TEM crosssection of silicon nanocrystalline quantum dot thin film. The image is also found in the ref. [6]

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Fig. 3 Initial IV caracteristics of thin film solar cells using silicon nanocrystalline quantum dot thin film

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Fig. 4 Light-induced degradation results of various thin film silicon solar cells

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