• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.485.2-485.2
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• 2014

Cz-Si 태양전지가 빛에 노출 되거나 소수 캐리어를 주입하는 경우 시간이 경과함에 따라서 전환 효율이 점점 감소하는 문제가 발생하는데 일반적으로 광열화(Light Induced Degradation) 현상이라고 명명한다. 이러한 현상은 준안정상태로 존재하는 결함들에 의해서 발생되는 것으로 연구되고 있으며 대표적인 결함으로 Cz-Si 물질 내부에 존재하는 B-O 결합이 있다. 광열화가 발생하는 명확한 기전은 아직 연구중에 있지만, 최근의 몇몇 연구결과들이 B농도와 O농도 사이의 상호관계에 대하여 밝혀냈다. 본 연구에서는 실시간으로 LID 현상을 관측하였으며, 초기상태와 비교하여 LID 이후에 열화 되는 특성들을 살펴보았다.

• Journal of the Korean Solar Energy Society
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• v.39 no.1
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• pp.1-9
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• 2019

Light induced degradation is one of the major research challenges of hydrogenated amorphous silicon related thin film silicon solar cells. Amorphous silicon shows creation of metastable defect states, originating from elevated concentration of dangling bonds during light exposure. The metastable defect states work as recombination centers, and mostly affects quality of intrinsic layer in solar cells. In this paper we present results of light induced degradation in thin film silicon solar cells and discussion on physical origin, mechanism and practical solutions of light induced degradation in thin film silicon solar cells. In-situ light-soaking IV measurement techniques are presented. We also present thin film silicon material with silicon nano-quantum dots embedded within amorphous matrix, which shows superior stability during light-soaking. Our results suggest that solar cell using silicon nano-quantum dots in abosrber layer shows superior stability under light soaking, compared to the conventional amorphous silicon solar cell.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.12.1-12.1
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• 2011

최근 p-type 결정질 실리콘 태양전지의 광열화현상(light induced degradation)에 대한 관심이 높아지면서, 이를 해결하기 위한 많은 연구들이 수행되고 있다. 본 연구에서는 LID 현상을 원천적으로 제거 할수 있는 n-type 기판을 이용하여, 상업적으로 양산화 가능한 공정을 도입하고, 시뮬레이션을 통하여 고효율화 방안을 제시하고자 한다. 이를 위해 일반적인 p-type 결정질 실리콘 태양전지 제작 공정을 사용하여 알루미늄이 도핑된 후면 에미터 구조의 n-type 결정질 실리콘 태양전지를 제작하였으며, PC1D 시뮬레이션을 통해서 n+/n/p+구조의 n-type 결정질 실리콘 태양전지의 에너지 변환 효율 향상을 위한 방안을 제시하였다.

• New & Renewable Energy
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• v.8 no.1
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• pp.24-34
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• 2012

The main issue of boron doped p-type czochralski-grown silicon solar cells is the degradation when they are exposed to light or minority carriers injection. This is due to the meta-stable defect such as boron-oxygen in the Cz-Si material. Although a clear explanation is still researching, recent investigations have revealed that the Cz-Si defect is related with the boron and the oxygen concentration. They also revealed how these defects act a recombination centers in solar cells using density function theory (DFT) calculation. This paper reviews the physical understanding and gives an overview of the degradation models. Therefore, various methods for avoiding the light-induced degradation in Cz-Si solar cells are compared in this paper.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.99.2-99.2
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• 2012

현재 양산 중인 대부분의 결정질 실리콘 태양전지는 p-type 실리콘 기판의 전면에 인 (phosphorus) 을 확산시켜 에미터로 사용한 스크린 프린티드 태양전지 (Screen Printed Solar Cells) 이다. 위 태양전지의 단점은 p-type 기판의 광열화현상 (Light Induced Degradation) 문제와 후면 알루미늄 금속 전극으로 인한 휨 현상 등이 있다. 이러한 단점을 해결하기 위해 n-type 기판의 전면에 보론 (Boron) 을 도핑하여 에미터로 사용하고, 후면 전계 (Back Surface Field) 로 인 (Phosphorus)을 도핑한 태양전지에 대한 연구가 활발히 진행 중이다. 본 연구에서는, 튜브 전기로 (tube furnace) 를 이용해 n-type 실리콘 웨이퍼 전면에 보론 도핑을 하고 이와 마찬가지로 웨이퍼 후면에 인 도핑을 실시하였다. 그리고 전면과 후면의 패시베이션을 위해 얇게 산화막을 형성한 후 실리콘 질화막 (SiNx) 을 증착하였다. 에미터와 후면 전계 그리고 패시베이션 층의 특성을 평가하기 위해 QSSPC (Quasi-Steady-State PhotoConductance) 로 소수반송자 수명 (Minority Carrier Lifetime) 과 포화 전류 (Saturation current) 값을 측정하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.3
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• pp.434-439
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• 2002

본 연구는 파장 분할 다중화(WDM：Wavelength Division Multiplexing) 방식 전송 시스템 (Transmission System)에 사용되는 어븀 첨가 광섬유 증폭기(EDFA : Erbium-Doped Fiber Amplifier)의 이득 제어(Gain Control) 방법에 관한 것으로 어븀 첨가 광섬유에서 상호 이득 포화(Cross Gain Saturation) 현상, 이득 비동질 (Gain In-homogeneity) 특성, 그리고 어븀 이온의 밀도 반전(Population Inversion)의 변화 에 의해 출력되는 다 파장 광 신호들의 광 세기가 각기 다르게 출력되는 현상을 고출력을 내도록 구성된 어븀 첨가 광섬유 증폭기와 고속 제어기를 구성하여 위 현상들을 억제하며 이득을 제어하기 위한 레이저 다이오드(Laser Diode : LD)의 제어전압 조사하고, 얻어진 결과들을 토대로 이득 제어에 적합한 방법을 제시하고 제어기를 설계한다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.293-297
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• 2002

본 연구는 파장 분할 다중화(WDM： Wavelength Division Multiplexing) 방식 전송 시스템 (Transmission System)에 사용되는 어븀 첨가 광섬유 증폭기(EDFA： Erbium-Doped Fiber Amplifier)의 이득 제어(Cain Control) 방법에 관한 것으로 어븀 첨가 광섬유에서 상호 이득 포화 (Cross Cain Saturation) 현상, 이득 비동질(Cain In-homogeneity) 특성, 그리고 어븀 이온의 밀도. 반전(Population Inversion)의 변화에 의해 출력되는 다 파장 광 신호들의 광세기가 각기 다르게 출력되는 현상을 고출력을 내도록 구성된 어븀 첨가 광섬유 증폭기와 고속 제어기를 구성하여 위 현상들을 억제하며 이득을 제어하기 위한 레이저 다이오드(Laser Diode : LD)의 제어전압 조사하고, 얻어 진 결과들을 토대로 이득 제어에 적합한 방법을 제시하고 제어기를 설계한다.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.51-54
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• 1999

Hydrogenated amorphous silicon (a-Si:H) films are fabricated by Argon radical annealing (ArRA). The deposition rate of continuously deposited a-Si:H film is 1.9 $\AA$/s. As ArRA time are increased to 0.5 and 1 minute, the deposition rate are increased to 2.8 $\AA$/s and 3.3 $\\AA$/s. The deposition rate of a-si:H films with 2 and 3 minutes ArRA time are 3.3 $\AA$/s. As the ArRA time is increased, the optical band gap and the hydrogen contents in the a-Si:H films are increased and slightly decreased. The light-induced degradation of ArRA treated a-Si:H films are less than that of continuously deposited a-Si:H film. The dark conductivity and the conductivity activation energy ($E_a$) of continuously deposited a-Si:H film are decreased to 1/25 in room temperature and increased to 0.09eV By 1 hour light soaking, respectively. The dark conductivity and $E_a$ of ArRA treated a-Si:H film decreased to 1/3 in room temperature and increased to 0.03eV by 1 hour light soaking, respectively. We could improve the stability of a-Si:H films under the light soaking by ArRA technique and discussed the microscopic process of ArRA technique.

• Journal of the Korean Geosynthetics Society
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• v.13 no.1
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• pp.71-83
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• 2014

Busan is located at the mouth of Nakdong River and if an earthquake occurs, it is very likely that the damage by the earthquake will be worse as liquefaction can happen in the sand layer, builtup soil, and landfill ground due to amplification in the lower sedimentary layer that is well developed in the river mouth. Therefore, this study first examined the possibility of liquefaction in the replaced sand layer under breakwater using 14 earthquakes in 5.6-7.9 scale and artificial earthquakes including the seismic wave suggested in the standard specifications for seismic design of ports and fishing port facilities to evaluate the stability of breakwater which is the primary protective structure for port facilities against earthquakes. Second, analysis on characteristics of the seismic energy and acceleration response spectrum by size of earthquake was performed to suggest the most appropriate size of seismic wave for the condition in Korea. Third, finite element analysis was performed using the suggested seismic wave to study the characteristics of earthquake by finding the dynamic lateral displacement of breakwater and verifying the stability of structure and the displacement and forces occurring at geotextile. Results of the study showed that the possibility of liquefaction in the landfill and replaced sand layer, the dynamic lateral displacement of breakwater, and changes of geotextile are greatly affected by the subsurface ground (replaced sand layer).

• Korean Journal of Materials Research
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• v.24 no.6
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• pp.305-309
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• 2014

When sunlight irradiates a boron-doped p-type solar cell, the formation of BsO2i decreases the power-conversion efficiency in a phenomenon named light-induced degradation (LID). In this study, we used boron-doped p-type Cz-Si solar cells to monitor this degradation process in relation to irradiation wavelength, intensity and duration of the light source, and investigated the reliability of the LID effects, as well. When halogen light irradiated a substrate, the LID rate increased more rapidly than for irradiation with xenon light. For different intensities of halogen light (e.g., 1 SUN and 0.1 SUN), a lower-limit value of LID showed a similar trend in each case; however, the rate reached at the intensity of 0.1 SUN was three times slower than that at 1 SUN. Open-circuit voltage increased with increasing duration of irradiation because the defect-formation rate of LID was slow. Therefore, we suppose that sufficient time is needed to increase LID defects. After a recovery process to restore the initial value, the lower-limit open-circuit voltage exhibited during the re-degradation process showed a trend similar to that in the first degradation process. We suggest that the proportion of the LID in boron-doped p-type Cz-Si solar cells has high correlation with the normalized defect concentrations (NDC) of BsO2i. This can be calculated using the extracted minority-carrier diffusion-length with internal quantum efficiency (IQE) analysis.