• Journal of Welding and Joining
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• 제28권6호
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• pp.40-44
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• 2010

Laser assisted machining (LAM) has been researched in order to machine the silicon nitride ceramics economically and effectively. LAM is an effective machining method by local heating of the cutting part to the softening temperature of the silicon nitride using laser beam. When silicon nitride ceramics is heated using a laser beam, the surface of silicon nitride ceramic is softened, oxidized and decomposed. And then surface hardness is decreased. Through machining in low viscosity and hardness conditions, silicon nitride was machined effectively and the life span of tool was increased. The plastic deformation was occurred due to softening of amorphous YSiAlON above $ 1,000^{\circ}C$. Transgranular fracture of ${\beta}-Si_3N_4$ was occurred when YSiAlON was not softened, but mostly intergranular fracture was occurred by the plastic deformation of softened YSiAlON.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.201-204
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• 2001

In this paper, for modeling of electrical characteristics in Poly Silicon Thin Film Transistors with process parameters set up optimum values, So, the I-V characteristics of poly silicon TFT parameters are examined and simulated in terms of the variations in process parameter. And these results compared and analyzed simulation values with examination value. The simulation program for characteristic analysis used SUPREM IV for processing, Matlab for modeling by mathematics, and SPICE for electric characteristic of devices. Input parameter for simulation characteristics is like condition of device process sequence, these electric characteristic of $I_D-V_D$ $I_D-V_G$, variations of grain size. The Gate oxide thickness of poly silicon are showed similar results between real device characteristics and simulation characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.201-204
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• 2001

In this paper, for modeling of electrical characteristics in Poly Silicon Thin Film Transistors with process parameters set up optimum values. So, the I-V characteristics of poly silicon TFT parameters are examined and simulated in terms of the variations in process parameter. And these results compared and analyzed simulation values with examination value. The simulation program for characteristic analysis used SUPREM IV for processing, Matlab for modeling by mathematics, and SPICE for electric characteristic of devices. Input parameter for simulation characteristics is like condition of device process sequence, these electric characteristic of I$_{D}$-V$_{D}$, I$_{D}$-V$_{G}$, variations of grain size. The Gate oxide thickness of poly silicon are showed similar results between real device characteristics and simulation characteristics.ristics.

• 전기전자학회논문지
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• 제27권4호
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• pp.630-635
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• 2023

SiC는 고온, 고전압을 비롯한 악조건에서의 내성이 기존 산업분야의 대다수를 점유하고 있는 Silicon에 비해 우수하여 전력반도체 분야에서 Silicon의 위치를 대체하여 가고 있다. 본 논문은 전력 반도체 소자 중 하나인 4H-SiC Planar MOSFET에 알루미늄으로 Gate를 형성하여 다결정 Si 게이트와 대비, 파라미터 값들이 일관성을 갖도록 하였으며, SiC MOSFET의 채널 도핑 농도에 변화를 주어 문턱전압과 항복전압, IV 특성을 연구하였다.

• 한국태양에너지학회 논문집
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• 제39권1호
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• pp.1-9
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• 2019

Light induced degradation is one of the major research challenges of hydrogenated amorphous silicon related thin film silicon solar cells. Amorphous silicon shows creation of metastable defect states, originating from elevated concentration of dangling bonds during light exposure. The metastable defect states work as recombination centers, and mostly affects quality of intrinsic layer in solar cells. In this paper we present results of light induced degradation in thin film silicon solar cells and discussion on physical origin, mechanism and practical solutions of light induced degradation in thin film silicon solar cells. In-situ light-soaking IV measurement techniques are presented. We also present thin film silicon material with silicon nano-quantum dots embedded within amorphous matrix, which shows superior stability during light-soaking. Our results suggest that solar cell using silicon nano-quantum dots in abosrber layer shows superior stability under light soaking, compared to the conventional amorphous silicon solar cell.

• 자원리싸이클링
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• 제28권2호
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• pp.54-61
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• 2019

블랙드로스로부터 고순도 알루미나를 회수하기 위해 기계적 활성화 처리한 블랙드로스를 수산화나트륨용액으로 침출하면 미량의 규소(IV)가 함유된 알루미네이트 용액을 얻을 수 있다. 본 연구에서는 hydrotalcite를 사용하여 알루미늄(III)과 규소(IV)의 농도가 각각 13000과 150 mg/L인 5 M의 수산화나트륨용액에서 규소(IV)의 선택적 흡착거동에 대하여 조사했다. Hydrotalcite는 수산화나트륨용액으로부터 규소(IV)만을 선택적으로 흡착하였다. Hydrotalcite의 소성과 농도 및 NaOH의 농도가 규소(IV)의 흡착에 미치는 영향을 조사하였다. 5 M의 수산화나트륨용액에서 규소(IV)의 흡착률은 낮으나 물로 48배 희석하여 소성한 hydrotalcite의 농도가 4.5 g/L 이상인 조건에서 규소(IV)를 대부분 흡착시켜 고순도 알루미나용액을 회수할 수 있었다. 소성한 hydrotalcite에서 규소(IV)의 흡착은 Freundlich 등온흡착식과 잘 일치하였다.

• Transactions on Electrical and Electronic Materials
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• 제12권1호
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• pp.16-19
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• 2011

The oxide-nitride-oxide (ONO) deposition process was added to the beginning of a 0.25 ${\mu}m$ embedded polysiliconoxide-nitride-oxide-silicon (SONOS) process before all of the logic well implantation processes in order to maintain the characteristics of basic CMOS(complementary metal-oxide semiconductor) logic technology. The system subsequently suffered severe ONO rupture failure. The damage was caused by the ONO implantation and was responsible for the ONO rupture failure in the embedded SONOS process. Furthermore, based on the experimental results as well as an implanted ion's energy loss model, processes primarily producing permanent displacement damages responsible for the ONO rupture failure were investigated for the embedded SONOS process.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.128.2-128.2
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• 2011

스테인레스 스틸 유연기판 위에 플라즈마 화학기상 증착법 (plasma enhanced chemical vapor deposition)을 이용하여 nip 구조의 미세결정질 실리콘 박막 태양전지 (microcrystalline silicon thin film solar cell)를 제조하고 i ${\mu}c$-Si:H광 흡수층과 p ${\mu}c$-Si:H 사이에 i a-Si:H 버퍼 층을 삽입하여 i/p 계면특성을 개선하고 이에 따른 태양전지 성능특성 변화를 조사하였다. ${\mu}c$-Si:H 박막으로 이루어진 i/p 계면에서의 구조적, 전기적 결함은 태양전지 내에서 생성된 캐리어의 재결합과 shunt resistance 감소를 초래하여 개방전압 (open circuit voltage) 및 곡선 인자 (fill factor)를 감소시키는 것으로 알려졌다. 제조된 미세결정질 실리콘 박막 태양전지는 SUS/Ag/ZnO:Al/n ${\mu}c$-Si:H/i ${\mu}c$-Si:H/p ${\mu}c$-Si:H 구조로 제작되었으며 i/p 계면 사이의 i a-Si;H 버퍼층 두께를 변화시키고 이에 따른 태양전지의 특성을 조사하였다. 태양전지의 구조적, 전기적 특성 변화는 Scanning Electron Microscope (SEM), UV-visible-nIR spectrometry, Photo IV와 Dark IV를 통하여 조사하였다.

• Archives of Reconstructive Microsurgery
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• 제12권1호
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• pp.1-12
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• 2003

The bridging of nerve gaps is still one of the major problems in peripheral nerve surgery. To evaluate the role of silicon tube in nerve regeneration, gaps were made by resection of tibial components of sciatic nerves of twenty-five New Zealand rabbits. The gaps were divided into five groups. In group I, the tibial components of sciatic nerves were isolated and the incision immediately closed. In group II, 1-cm segments of the nerve were removed and the silicon tubes filled with autogenous skeletal muscle were sutured in place. In group III, 1-cm segments of the nerve were removed and the silicon tubes filled without muscle were sutured in place. In group IV, 2-cm segments of the nerve were removed and the silicon tubes filled with autogenous skeletal muscle were sutured in place. In group V, 2-cm segments of the nerve were removed and the silicon tubes filled without muscle were sutured in place. At 16th week, the eletromyography, the light and transmission electron microscopy were performed. Nerve conduction study stimulating sciatic nerve proximal to the lesion and recording at gastrocnemius muscle showed that the compound muscle action potentials of the group II with 1 cm nerve defect filled with muscle were higher amplitudes than the group III without muscle. Compound muscle action potentials of the group IV with 2 cm defect filled with muscle showed similar results in comparison with the group V. The light and transmission electron microscpy showed that a good morphological pattern of nerve regeneration in 1 cm gap than 2 cm and in gap with muscle than gap without muscle.

• 한국구조물진단유지관리공학회 논문집
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• 제13권6호통권58호
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• pp.135-147
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• 2009

본 논문에서는 저열포틀랜드 시멘트와 steel aggregates인 Ferro-Silicon, 실리카흄, 충전재로서 미세 석영과 고강도화에 따른 취성파괴 문제를 개선하기위해 강섬유를 사용하여 압축강도 400MPa이상의 초고강도 분체 콘크리트를 개발 하고자 하였다. 콘크리트의 초고강도화의 영향을 고려하여 물-시멘트비 저감이 가능한 저열포틀랜드 시멘트와 비교대상으로 보통포틀랜드 시멘트를 사용하고, 골재 대체 재료로 Ferro Silicon을 각각의 배합비, 양생조건을 달리하여 압축강도를 비교분석 하였다. 초고강도 콘크리트는 보통콘크리트와 달리 사용재료의 영향이 대단히 중요하며, SEM 촬영결과 Type III, Type IV의 C-S-H수화물이 비교적 많이 생성되었고, 고온고압양생으로 토버모라이트와 조놀라이트가 생성된것을 확인 하였다. 또한 골재의 세립화, 분체의 치밀충전화 및 반응성 재료의 사용으로 인해 페이스트가 고강도화 되고, 강섬유를 사용하여 인성을 보강하므로써, 28일 압축강도 420Mpa의 초고강도 분체콘크리트를 성공적으로 개발 하였다.