• 한국세라믹학회지
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• 제42권3호
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• pp.178-181
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• 2005

Silicon oxynitride (SiON) 막은 플라즈마 화학기상증착법(PECVD)으로 $SiH_4,\;N_2O$와 $N_2$ 가스를 사용하여 $SiO_2/Si$ 위해 증착되었다. 증착 변수에 따라서 SiON 막의 굴절률은 prism coupler를 사용하여 1552nm 파장에서 $1.4480\~1.4958$까지 변화하였다. 평판 광도파로 코어로 사용되는 SiON 막의 두께는 $6{\mu}m$이고, buffer 막과의 굴절률 차이(An)는 $0.36\%$이다. 또한 식각 공정으로 $SiO_2$ 막 위에 증착된 SiON 막은 건식식각을 통해서 수행되었다. 광화이버에 $1.55{\mu}m$ 파장의 레이저론 입력단에 조사하였다. 결과적으로 저굴절률 차이 SiON 광도파로를 제작하였으며, 출력단에서 single-mode 형상을 확인하였다.

• 한국전기전자재료학회논문지
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• 제11권4호
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• pp.267-273
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• 1998

The band structures of $Si_{1-x}Ge_x$ layers grown on $Si_{1-y}Ge_y$ substrate are calculated using k$\cdot$p and strain Hamiltonians. The hole drift mobilities in the plane direction are then calculated by taking into account the screening effect and the density-of-states of the impurity band. When $Si_{1-x}Ge_x$ is grown on Si substrate, the mobilities of (110) and (111) $Si_{1-x}Ge_x$ layers are larger than that of (001) $Si_{1-x}Ge_x$. However, due to the large defect and surface scattering, (110) and (111) $Si_{1-x}Ge_x$ layers may not be useful for the development of the fast device. Meanwhile, when Si is grown on $Si_{1-y}Ge_y$ substrate, the mobilities of (001) and (110) Si layers are greatly enhanced. Based on the amount of defect and the surface scattering, it is expected that Si grown on (001) $Si_{1-y}Ge_y$ substrate, where the Ge contents is larger than 10%(y>0.1), has the highest mobility.

• Journal of Power Electronics
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• 제13권4호
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• pp.584-591
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• 2013

In this paper, a hybrid booster power module with Si IGBT and Silicon Carbide (SiC) Schottky Barrier Diode (SBDs) is presented. The switching characteristics of the hybrid booster module are compared with commercial Silicon IGBT/Si PIN diode based modules. We applied the booster power module into a non-isolated on board vehicle charger with a simple buck-booster topology. The performances of the on-vehicle charger are analyzed and measured with different power modules. The test data is measured in the same system, at the same points of operation, using the conventional Si and hybrid Si/SiC power modules. The measured power conversion efficiency of the proposed on-vehicle charger is 96.4 % with the SiC SBD based hybrid booster module. The conversion efficiency gain of 1.4 % is realizable by replacing the Si-based booster module with the Si IGBT/SiC SBD hybrid boost module in the 6.6 kW on-vehicle chargers.

• 반도체디스플레이기술학회지
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• 제6권4호
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• pp.65-68
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• 2007

An epitaxial NiSi structure on Si (001) substrate was studied by using density functional theory (DFT). Orhorhombic and B2-NiSi structures were compared first. B2 structure was further considered as it has same crystal structure as Si and the lattice mismatch between B2 and Si is small, compared to orthorhombic-NiSi. The lattice parameters of x- and y-direction in B2-NiSi structure were modified to match with those in Si (001). The size reduction of the lattice parameter of B2-NiSi to match with that of Si increased the lattice parameter of z-direction by 10.5%. Therefore, we propose that an optimum structure of NiSi for epitaxial growth on Si (001) is a tetragonal structure.

• 한국세라믹학회지
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• 제51권3호
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• pp.197-200
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• 2014

We investigated the influence of blistering on $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks passivation layers. $Al_2O_3$ film provides outstanding Si surface passivation quality. $Al_2O_3$ film as the rear passivation layer of a p-type Si solar cell is usually stacked with a capping layer, such as $SiO_2$, SiNx, and SiON films. These capping layers protect the thin $Al_2O_3$ layer from an Al electrode during the annealing process. We compared $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks through surface morphology and minority carrier lifetime after annealing processes at $450^{\circ}C$ and $850^{\circ}C$. As a result, the $Al_2O_3$/SiON stacks were observed to produce less blister phenomenon than $Al_2O_3$/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositing SiNx film, the rich H species in $NH_3$ source are diffused to the $Al_2O_3$ film. On the other hand, less hydrogen diffusion occurs in SiON film as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently, the $Al_2O_3$/SiON stacks had a higher minority carrier lifetime than the $Al_2O_3$/SiNx:H stacks.

• 한국세라믹학회지
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• 제41권3호
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• pp.197-201
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• 2004

플라즈마 화학기상증착(PECVD)법을 이용하여 Si(100) 웨이퍼에 silicon oxide(SiO$_2$)와 silicon oxynitride(SiON) 후막을 SiH$_4$, $N_2$O, $N_2$가스를 혼합하여 증착하였다. RF power와 rf bias power의 변화에 따른 SiO$_2$ 막과 SiON 막의 특성변화에 대하여 고찰하였다. RF power와 rf bias power가 증가함에 따라 굴절률은 감소하는 경향을 나타내었으며, 막의 굴절률은 1552 nm에서 1.4493-1.4952까지 변화하였다. 이와 같이 rf power가 증가함에 따라 굴절률이 감소하는 이유는 oxygen의 량이 증가하고 nitrogen의 량이 감소하여 즉, O/N 비가 증가하여 굴절률이 감소하는 경향을 나타내었다.

• Applied Science and Convergence Technology
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• 제25권2호
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• pp.28-31
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• 2016

The structural and the electronic properties of pentacene on modified Si (001) were investigated using scanning tunneling microscopy (STM), atomic force microscopy (AFM) and ultraviolet photoelectron spectroscopy (UPS). Dodecane was used to modify Si (001) substrates and then pentacene was deposited on dodecane/Si (001). Our STM results show a uniform distribution of aggregated dodecane molecules all over the clean Si (001). The surface structure of pentacene on dodecaene/Si (001) examined by AFM is analogous to that of pentacene on $SiO_2$. The UPS data showed that the work function of pentacene on clean Si (001) and pentacene on modified Si (001) with dodecane was 6.41 and 5.57 eV, respectively. Our results prove that dodecane results in the work function difference between pentacene on clean Si (001) and pentacene on dodecane/Si (001).

• 한국세라믹학회지
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• 제36권6호
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• pp.655-661
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• 1999

${\beta}$-SiC formation mechanism in Si melt-C-SiC system with varying in size of carbon source was investigated. A continuous reaction sintering process using Si melt infiltration method was adopted to control the reaction sintering time effectively. It was found that ${\beta}$-SiC formation mechanism in Si melt-C-SiC system was directly affected by the size of carbon source. In the Si melt-C-SiC system with large carbon source ${\beta}$-SiC formation mechanism could be divided into two stages depending on the reaction sintering time: in early stage of reaction sintering carbon dissolution in Si melt and precipitation of ${\beta}$-SiC was occurred preferentially and then SIC nucleation and growth was controlled by diffusion of carbon throughy the ${\beta}$-SiC layer formed on graphite particle. Furthmore a dissolution rate of graphite particles in Si melt could be accelerated by the infiltration of Si melt through basal plane of graphite crystalline.

• 마이크로전자및패키징학회지
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• 제14권3호
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• pp.57-64
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• 2007

Si 칩에 박막히터를 형성하고 이에 전류를 인가하여 LCD (liquid crystal display) 패널의 유리기판은 가열하지 않으면서 Si 칩만을 선택적으로 가열함으로써 Si 칩을 LCD 패널의 유리기판에 실장 하는 새로운 COG 공정기술을 연구하였다. $5\;mm{\times}5\;mm$ 크기의 Si 칩에 마그네트론 스퍼터링법으로 폭 $150\;{\mu}m$,두께 $0.8\;{\mu}m$, 전체 길이 12.15 mm의 정방형 Cu 박막히터를 형성하였으며, 이에 0.9A의 전류를 60초 동안 인가하여 Si칩의 Sn-3.5Ag 솔더범프를 리플로우 시킴으로써 Si 칩을 유리기판에 COG 본딩하는 것이 가능하였다.

• 한국분말재료학회지
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• 제28권6호
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• pp.502-508
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• 2021

SiAlON-based ceramics are a type of oxynitride ceramics, which can be used as cutting tools for heat-resistant super alloys (HRSAs). These ceramics are derived from Si3N4 ceramics. SiAlON can be densified using gas-pressure reactive sintering from mixtures of oxides and nitrides. In this study, we prepare an α-/β-SiAlON ceramic composite with a composition of Yb_0.03Y_0.10Si_10.6Al_1.4O_1.0N_15.0. The structure and mechanical/thermal properties of the densified SiAlON specimen are characterized and compared with those of a commercial SiAlON cutting tool. By observing the crystallographic structures and microstructures, the constituent phases of each SiAlON ceramic, such as α-SiAlON, β-SiAlON, and intergranular phases, are identified. By evaluating the mechanical and thermal properties, the contribution of the constituent phases to these properties is discussed as well.