• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.181-184
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• 2002

This paper describes fabrication and characteristics of ceramic pressure sensor for working at high temperature. The proposed pressure sensor consists of a Ta-N thin-film, patterned on a Wheatstone bridge configuration, sputter deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability The sensitivity is 1.097∼1.21 mV/V$.$kgf/$\textrm{cm}^2$ in the temperature range of 25∼200$^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.256-258
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• 2003

Two Si wafers are bonded with indium-silver alloy using diffusion bonding method. When silver and indium thin films are contacted, they diffuse into each other and form inter-metallic compounds like $AgIn_2$, $Ag_2In$, $Ag_3In$ etc. These compounds are determined by ratio of two metals. From phase diagram of Ag-In alloy, we can get the ratio of $Ag_2In$, that has high melting point about 700$^{\circ}C$, approximately 2:1. This ratio was made by controlling of film thickness. And bonding was executed by annealing and adding pressures at a time. The joint of these wafers had been observed by SEM. And we had also seen the EDS (Energy Dispersive Spectroscopy) data to analysis the component of samples.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.24-29
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• 1999

The characteristic behaviors of CH3Br were examined first for the dry etching of polysilicon in a Cl2/CH3Br/O2 plasma. CH3Br is revealed one of the excellent additive gases to control anisotropy of etching profile and to give no undercutting for various typed of polysilicons. CH3Br acts as a passivation precursor on the side wall in etch cavity by forming polymer-like films such as CHxBry(x+y=1,2). The decrease of etch selectivity due to the reaction if the C-containing species from CH3Br with the surface O atoms of SiO2 was overcome by the addition of O2 into plasma, resulting that the selectivity increased by 2~3 times. According to the results of optical emission signals, CH3Br should be dissociated into several fragments to give more hydrogen atoms than bromine atoms in our helical resonator system.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.143-143
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• 2003

• Proceedings of the KIEE Conference
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• 2001.04a
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• pp.67-68
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• 2001

We present the basic properties of a superconductive current limiting fuse (SCLF) based on YBCO/Au films. The SCLF consists of meander type YBCO stripes covered with an Au layer for current shunt. The fault current was first limited to a designed value in less than 0.4 msec by resistance development in YBCO/Au upon quenching. This enables the SCLF to transfer small fault power and the suppressed current was sustained for more than 0.5 msec while Au layer melting and arcing. The arcing time was less than 2.5 msec, that is short enough to do self-interruption.

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.258-258
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• 2007

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1319-1320
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• 2007

본 연구는 ZnO 박막을 유도 결합 플라즈마를 이용하여, $BCl_3$/Ar 가스 혼합비, RF 전력, 직류 바이어스 전압과 공정 압력을 변경하면서 실험하였다. ZnO 박막의 최고 식각속도는 80%의 $BCl_{3}/(BCl_{3}+Ar)$에서 700 W의 RF 전력, -150 V의 직류 바이어스 전압, 15 mTorr의 공정 압력, $28^{\circ}C$의 기판 온도로 고정시켰을 때 50 nm/min 이었다. 이 조건에서 ZnO 박막과 $SiO_2$의 선택비는 0.75 이었다.

• Journal of Sensor Science and Technology
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• v.11 no.5
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• pp.309-318
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• 2002

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured with Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7116\;eV-(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasi cubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K areascribed to the $A_1$-, $B_1$-, and C1-exciton peaks for n = 1.

• Journal of the Korean Electrochemical Society
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• v.7 no.4
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• pp.173-178
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• 2004

Silicon thin film were synthesized from silane and argon gas mixture directly on copper foil by rf PECVD and then lithium ion batteries were prepared from them employed as the negative electrodes without any further treatment. In the present study, two different kinds of silicon thin films, amorphous silicon and copper silicide were prepared by changing deposition temperature. Amorphous silicon film was prepared below $200^{\circ}C$, but copper silicide film with granular shape was formed by the reaction between silicon radical and diffused copper ions under elevating temperature above $400^{\circ}C$. The amorphous silicon film gives higher capacity than copper silicide, but the capacity decreases sharply with charge-discharge cycling. This is possibly due to severe volume changes. The cyclability is improved, however, by employing the copper silicide as a negative electrode. The copper silicide plays an important role as an active material of the electrode, which mitigates volume change cause by the existence of silicon and copper chemical bonding and provides low electrical resistance as well.

• Journal of the Korean Ceramic Society
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• v.41 no.6
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• pp.450-455
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• 2004

NiCr thin films were fabricated by thermal evaporation method using NiCr alloy as evaporating source. NiCr thin films were annealed at various temperatures in air atmosphere in order to investigate effects of annealing conditions on phase change, composition, and microstructures of NiCr films. Typical multilayer was formed after annealing in air atmosphere. This results from the diffusion and oxidation of Cr toward surface during annealing. In the case of annealing at 700$^{\circ}C$, large columnar grains of NiO were formed on Cr-oxide layer through the diffusion and oxidation of Ni over Cr-oxide layer. Especially, NiO layer was formed additionally on surface, sustaining the underlayer structure with the formation of porous Ni layer.