• Proceedings of the Korea Contents Association Conference
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• 2007.11a
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• pp.804-806
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• 2007

C-axis oriented zinc oxide thin films were deposited on Si(100) substrate by rf magnetron sputtering. The effects of deposition parameters on the crystallinity and electrical properties of ZnO films were investigated. As-deposited ZnO films showed the strong c-axis growth andexcellent crystallinity under the deposition conditions as follows ; substrate temperaturec : $200^{\circ}C$, rf power : 150W, gas ratio : $O_2/Ar=50/50$, chamber pressure : 10mTorr. The resistivity of ZnO films was significantly affected by deposition parameters. With increasing percentage of oxygen, and decreasing substrate temperature, the resistivity of ZnO films increased.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.39-40
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• 1998

Diffusion barrier characteristics of hf(C,N) thin films for Cu metalliztion was investgated. Hf(C,N) thin films were depposited on Si(100) suvstrates by ppulsed D. C pplasma enhanced metal-organic chemical vappor depposition (ppE-MOCVD) using Tetrakis diethyl amido hafnium (Hf[NC2H5)2]4 : TDEAHf) and N2 as pprecursors. X-ray diffraction analyses sheet resistance measurment and Rutherford backscattering sppectroscoppy analyses revealed that HF(C,N) films pprevent diffusion of Cu fairly well upp to $600^{\circ}C$. At $700^{\circ}C$ however Hf(C,N) films allowed a significant diffusion of Cu into the Si substrate.

• Journal of the Korean Ceramic Society
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• v.43 no.6 s.289
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• pp.362-368
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• 2006

Epitaxial $Ba_{0.5}Sr_{0.5}TiO_3$ (BSTO) thin films have been grown on TiN buffered Si (001) substrates by Pulsed Laser Deposition (PLD) method and the effects of substrate temperature and oxygen partial pressure during the deposition on their dielectric properties and crystallinity were investigated. The crystal orientation, epitaxy nature, and microstructure of oxide thin films were investigated using X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). Thin films were prepared with laser fluence of $4.2\;J/cm^2\;and\;3\;J/cm^2$, repetition rate of 8 Hz and 10 Hz, substrate temperatures of $700^{\circ}C$ and ranging from $350^{\circ}C\;to\;700^{\circ}C$ for TiN and oxide respectively. BSTO thin-films were grown on TiN-buffered Si substrates at various oxygen partial pressure ranging from $1{\times}10^{-4}$ torr to $1{\times}10^{-5}$ torr. The TiN buffer layer and BSTO thin films were grown with cube-on-cube epitaxial orientation relationship of $[110](001)_{BSTO}{\parallel}[110](001)_{TiN}{\parallel}[110](001)_{Si}$. The crystallinity of BSTO thin films was improved with increasing substrate temperature. C-axis lattice parameters of BSTO thin films, calculated from XRD ${\theta}-2{\theta}$ scans, decreased from 0.408 m to 0.404 nm and the dielectric constants of BSTO epitaxial thin films increased from 440 to 938 with increasing processing oxygen partial pressure.

• Korean Journal of Materials Research
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• v.7 no.2
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• pp.107-113
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• 1997

$SrBi_{2}Ta_{2}O_{9}(SBT)$ thin films wcre prepared on $Pt/Ti/SiO_{2}/Si$ suhsrrate by pL~snia-enhanced chemical vapor deposition. Sr and Ta huhhling temperatures were kept ,it $120^{\circ}C$ Iron1 X- ray tiiffriict!on. n~icrostruc~ure. and composjrional analysis of SH7' films, respectivels Hi I~ut~t~lmg tempcl.arure was varied SR'I' thin tilrns dcpositcd ar i3i buhbling temperature of $130^{\circ}C$ have dielccrric constanr of 150 anti dissipation factor of 0 02 at IOOkFic. I .eakagc wrrent density of films was ahour $1.0{\times}10^{-8}A/cm^2$ at 20kV/cm. 1.eakage current i11amcrc1istic.s of Sli'l' films nras c.ontrolled by I'oole Frcnkel emission Kenianent polariziit~on and mercivc field oi SR\ulcorner' films annealed at $550^{\circ}C$ were $9{\mu}C/cm^2$ and 70kV/cm, respectively.

• Journal of the Korean institute of surface engineering
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• v.28 no.6
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• pp.386-392
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• 1995

The RF planar magnetron sputtering technique was used to fabricate uniform ZnO/$SiO_2$/Si thin films at high growth rate. A detailed crystallographic character of these thin films has been carried oct using XRD, XRC, and SEM. These thin films have the configuration of c-axis orientation perpendicular to $SiO_2$/ Si substrate. The dependence of the thickness of ZnO/$SiO_2$/Si films on applied RF power parameters was also investigated. The crystallinity of films was improved as the substrate temperature was high, RF input power increased, and Ar/$O_2$ ratio decreased. Also, most of ZnO films fabricated on $SiO_2$/Si were suitable for SAW filter since a standard deviation of XRC (002) peak was less than $6^{\circ}$. The presence of the $SiO_2$ layer has a beneficial effect on the crystalline quality of the grown ZnO films.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.850-852
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• 1998

SiC thin film have been prepared by ICP-CVD for low temperature deposition and large area deposition. The structural properties of deposited SiC films are characterized by employing SEM, FT-IR, XRD, XPS and Raman Spectroscopy. From the experimetal results, good crystallinity has been achieved in $1000^{\circ}C$ grown SiC film which have carbonization step at $1100^{\circ}C$ for substrate bias of 30V.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.285-303
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• 1999

Thin films of hydrogenated amorphous silicon carbide compounds (a-SixC1x:H) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane(SiH4) and methane(CH4) as the gas precursors at 1 Torr and at low substrate temperature (25$0^{\circ}C$). The gas flow rate was changed with every other parameters (pressure, temperature, RF power) fixed. The substrate was Si(100) wafer and all of the films obtained were amorphous. The bonding structure of a-SixC1x:H films deposited was investigated by X-ray photoelectron spectroscopy (XPS) for the film compositions. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).

• Journal of the Korean Ceramic Society
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• v.29 no.11
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• pp.863-869
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• 1992

A SOG(spin glass) solution with excellent wetting to Si wafers was prepared by acid-hydrolysis of Si(OEt)4 and Me2Si(OEt)2. The solution was spin coated on Si wafers, and effects of heat treatment of the film were characterized by TG/DTA, FTIR and Ellipsometry. Silica film was obtained by heat treatment at $600^{\circ}C$ within one hour, but heat treatment at 80$0^{\circ}C$ caused interfacial oxidation of the silicon substrate. Unexpectedly silica films with much better adhesion were obtained by curing at $600^{\circ}C$ for over 30 min. than those obtained by thermal oxidation.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.22-26
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• 2001

Microstructures of AlN thin films on Si substrates grown by plasma assisted molecular beam epitaxy were analyzed with various growth temperatures and substrate orientations. Reflection high energy electron diffraction (RHEED) patterns were checked for the in-situ monitoring of the growth condition. X-ray diffraction(XRD), double crystal X-ray diffraction (DCXD), and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films after growth. On Si(100) sub-strates, AlN thin films were grown mostly along the hexagonal c-axis orientation at temperature higher than $850^{\circ}C$. On the other hand the AlN films on Si(111) were epitaxially grown with directional coherencies in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112). The microstructure of AlN thin films on Si(111) substrates, with a full width at half maximum of almost 3000 arcsec at 2$\theta$=$36.2^{\circ}$, showed that the single crystal films were grown, even if they includ a lot of crystal defects such as dislocations and stacking faults.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.45-45
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• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 $mA/cm^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 $cm^{-1}$. PL shows the band gap enegry of thin film (2.5 eV) and porous 3C-SiC (2.7 eV).