Proceedings of the Korea Association of Crystal Growth Conference (한국결정성장학회:학술대회논문집)
- 1999.06a
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- Pages.285-303
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- 1999
Surface analysis of a-$Si_xC_{1x}:H$ deposited by RF plasma-enhanced CVD
RF plasma-enhancd CVD 법에 의해 증착된 a-$Si_xC_{1x}:H$ 의 표면분석
- Kim, Yong-Tak (School of Metallurgical and Materials Engineering, Sungkyunkwan University) ;
- Yang, Woo-Seok (School of Metallurgical and Materials Engineering, Sungkyunkwan University) ;
- Lee, Hyun (School of Metallurgical and Materials Engineering, Sungkyunkwan University) ;
- Byungyou Hong (School of Electrical and Computer Engineering, Sungkyunkwan University) ;
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Yoon, Dae-Ho
(School of Metallurgical and Materials Engineering, Sungkyunkwan University)
- Published : 1999.06.01
Abstract
Thin films of hydrogenated amorphous silicon carbide compounds (a-SixC1x:H) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane(SiH4) and methane(CH4) as the gas precursors at 1 Torr and at low substrate temperature (25
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