• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.92-94
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• 2004

In this investigation, 3C-SiC film deposited $1000{\AA}$ on the p-type silicon wafer which is resistance $0{\sim}30[{\Omega}{\cdot}cm]$ by PECVD (Plasma-enhanced Chemical Vapor Deposition). We deposited Cr, Ta, Pt in front of wafer to utilize DC-sputter for $500{\AA}$, the SiC Schottky diode made from Al ohmic contact about $4000{\AA}$, and to each different temperature which annealing in Ar atmosphere, we had forward characteristic analysis along to annealing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.77-80
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• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta$$\theta$$_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 2000e. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.t also seed layer.r.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.766-772
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• 2011

Amorphous Si (a-Si) thin films of $p^+/p^-/n^+$ were deposited on $Si_3N_4$/glass substrate by using a plasma enhanced chemical vapor deposition (PECVD) method. These films were annealed at various temperatures and for various times by using a rapid thermal process (RTP) equipment. This step was added before the main thermal treatment to make the nuclei in the a-Si thin film for reducing the process time of the crystallization. The main heat treatment for the crystallization was performed at the same condition of $600^{\circ}C$/18 h in conventional furnace. The open-circuit voltages ($V_{oc}$) were remained about 450 mV up to the nucleation condition of 16min in the nucleation RTP temperature of $680^{\circ}C$. It meat that the process time for the crystallization step could be reduced by adding the nucleation step without decreasing the electrical property of the thin film Si for the solar cell application.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1595-1597
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• 2003

This paper presents the deposition of ${\mu}c$-Si:H thin-film and fabrication of a solar cell by VHF-PECVD method. The ${\mu}c$-Si:H thin films and pin-type solar cells are fabricated using multi-chamber cluster tool system. A 7.4% conversion efficiency was achieved from ${\mu}c$-Si:H thin film solar cells with total thickness less than $5{\mu}m$. The physical characteristic was measured by Raman spectroscopy, Solar cell characteristic was measured under AM1.5 illumination.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.830-833
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• 2003

This paper describes the fabrication and characteristics of 3C-SiCOI sotctures by SDB and etch-back technology for high-temperature MEMS applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si(001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The wafer bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR. The strength of the bond was measured by tensile strengthmeter. The bonded interface was also analyzed by SEM. The properties of fabricated 3C-SiCOI structures using etch-back technology in TMAH solution were analyzed by XRD and SEM. These results indicate that the 3C-SiCOI structure will offers significant advantages in the high-temperature MEMS applications.

• Advances in materials Research
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• v.9 no.1
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• pp.49-62
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• 2020

Fracture toughness of SiC on Si thin films of thicknesses of 150, 750, and 1500 nm were measured using Agilent XP nanoindenter equipped with a Dynamic Control Module (DCM) in Load Control (LC) and Continuous Stiffness Method (CSM) protocols. The fracture toughness of the Si substrate is also measured. Nanovision images implied that indentations into the films and well deep into the Si caused cracks to initiate at the Si substrate and propagate upward to the films. The composite fracture toughness of the SiC/Si was measured and the fracture toughness of the SiC films was determined based on models that estimate film properties from substrate properties. The composite hardness and modulus of the SiC films were measured as well. For the DCM, the hardness decreases from an average of 35 GPa to an average of 13 GPa as the film thick increases from 150 nm to 1500 nm. The hardness and moduli of the films depict the hardness and modulus of Si at deep indents of 12 and 200 GPa respectively, which correlate well with literature hardness and modulus values of Si. The fracture toughness values of the films were reported as 3.2 MPa√m.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.59-69
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• 1997

The growth and microstructural characterization of epitaxial yttrium silicide ($YSi_2$) on the (100)Si substrate are investigated. The $YSi_2$ film grow epitaxilly through the solid phase reaction during vacuum annealing above $400^{\circ}C$. The epitaxial relationships between the hexagonal $YSi_2$ film and the (100)Si substrate are [0001]$YSi_2$//[011]Si and [0001]$YSi_2$//[011]Si in the (1100)$YSi_2$//(100)Si plane relation. The YSi$_2$ film consists of the two types of domains which have two different azimuthal orientations making an angle of $90^{\circ}$ to each other. The two types of domains in the $YSi_2$film are equivalent in volume fraction and crystalline quality, which has been proved from the equivalent integrated intensities of (2201) asymmetric reflection of X-ray diffraction. The formation of a double -domain structure is discussed on the basis of geometrical matching at interface between the (1100)$YSi_2$ film and the (100)Si substrate, and growth model is proposed.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.73-73
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• 2007

Amorphous BON and Si-DLC thin films were synthesized by the RF plasma enhanced CVD method, and their oxidation behavior was studied up to $500^{\circ}C$ in air. The oxidation of both films was accompanied by evaporation of volatile species. The oxidation of BON film was preceded by nitrogen escape from the film, and oxygen penetration into the film. The oxidation of Si-DLC film was preceded by carbon escape probably as CO or $CO_2$from the film, and oxygen penetration into the film. The inwardly transported oxygen simply stayed in the oxidized BON and Si-DLC thin films.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.34-39
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• 1995

Various silicon films were prepared by thermal- and UV photo-CVD processes. The reactants were SiH4, Si2H6, SiH2F2, SIF4, and H2. Silicon films grown at temperatures below $500 ^{\circ}C$ were either amorphous or crystalline depending on the process conditions, and the growth rates ranged between 5 and $80\AA$min. Crystallinity of the film was improved even at $250^{\circ}C$ when the film was grown by photo-CVD using fluoro-silanes as the reactants. Analysis of the film by RBS, SIMS, XRD, and ex-situ IR indicated that substrate surface was contaminated by oxygen and other impurities when the reactants contained neither hydrogen nor fluoro-silnanes, but when fluoro-silanes were used as reactants the silicon film was highly crystalline.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.65-66
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• 2000

Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for crystalline Si film growth. The XRD analysis on $CaF_2/glass$ illustrated (220) preferential orientation and showed lattice mismatch less than 5 % with Si. We achieved a fluoride film with breakdown electric field of 1.27 MV/cm, leakage current density about $10^{-6}$ $A/cm^2$, and relative dielectric constant less than 5.6. This paper demonstrates microcrystalline silicon $({\mu}c-Si)$ film growth by using a $CaF_2/glass$ substrate. The ${\mu}c-Si$ films exhibited crystallization in (111) and (220) planes, grain size of $700\;{\AA}$, crystalline volume fraction over 65 %, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than $4{\times}10^{-7}$ S/cm.