• Title/Summary/Keyword: Si-Cl-H

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Effect of Si on the Corrosion Properties of Mg-Li-Al Light Alloy (경량화 Mg-Li-Al합금의 내식성에 미치는 Si의 영향)

  • 김순호
    • Resources Recycling
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    • v.7 no.5
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    • pp.52-57
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    • 1998
  • Effect of Si in the electrochemical corrosion characteristics of Mg-Li-Al light alloy has been investigated by means of potentiodynamic polarization study. The elecrochemical behaviors were evaluated in 003% NaCl solution and the solution buffered with KH$_{2}PO_{5}{\cdot}$NaOH at room temperature. It was found that the addition of very small quantity of Si (0.48 wt%) in Mg-Li-Al light alloy increased corrosion rates and amount of corrosion products and decreated the pitting resistance of the alloy. From the results it was concluded that Si which is added to increase the strength of Mg-Li-Al alloy is harmful to corrosion properties of the alloy.

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Study of Settling Properties of Cohesive Sediments (점착성 유사의 침강특성에 관한 연구)

  • Choi, In Ho;Kim, Jong Woo
    • Journal of Wetlands Research
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    • v.19 no.3
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    • pp.303-310
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    • 2017
  • This paper is to understand the settling properties of cohesive sediments under effects of ions in turbulent flow. The experiments were conducted using a miniature annular flume(mini flume) with a free water surface. Silica was used as sediment of experiment. The suspended concentrations were measured by using a CCD-Camera. Settling of silica($SiO_2$) was allowed to occur under various shear stresses in a concentration of 7g/L. At condition of pH 4.2 and high NaCl concentration, the floc size D of silica was larger than D at condition of pH6.8 with the bed shear stress increasing. The settling velocity $W_s$ of silica was higher at condition of 10g NaCl/L than $W_s$ at condition of pH4.2. Comparison of measured concentration-time curves and concentration-time curves calculated by this study showed similar tendency in flow under effects of ions.

Synthesis, Structural Characterization and Thermal Behaviour of Block Copolymers of Aminopropyl-Terminated Polydimethylsiloxane and Polyamide Having Trichlorogermyl Pendant Group (Aminopropyl-Terminated Polydimethylsiloxane과 Trichlorogermyl 곁가지 그룹을 갖는 Polyamide 블록공중합체의 합성, 구조분석 및 열적거동)

  • Gill, Rohama;Mazhar, M.;Mahboob, Sumera;Siddiq, Muhammad
    • Polymer(Korea)
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    • v.32 no.3
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    • pp.239-245
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    • 2008
  • Block copolymers of the general formula $[(-CO-R'-CO-HN-Ar-NH-CO-R'-CO)_xNH(CH_2)_3-(Me_2SiO)_y(CH_2)_3NH_2]_n$, [n=18.00 to 1175.0] where $R'=CH_2CH(CH_2GeCl_3)$;$CH_2CHGeCl_3CH_2$; and $Ar=-C_6H_4$;$-(o.CH_3C_6H_4)_2$;$-o.CH_3OC_6H_4)_2$;$-(o.CH_3C_6H_4)$ were prepared by a polycondensation reaction of polyamide containing a pendant trichlorogermyl group and terminal acid chloride $Cl(-CO-R'-CO-NH-Ar-NH-CO-R'-CO-)_xCl$ with aminopropyl-terminated polydimethylsiloxane $H_2N(CH_2)_3(Me_2SiO)_y-(CH_2)_3NH_2]$, (PDMS). These polymers were characterized by elemental analysis, $T_g$, FT-IR, $^1H$-NMR, solid state $^{13}C$-NMR, and molecular weight determination. The thermal stability of these copolymers was examined using thermal analysis techniques, such as TGA and DSC. Their molecular weights as determined by laser light scattering technique ranged $5.13{\times}10^5$ to $331{\times}10^5\;g/mol$. These polymers display their $T_g$ in the range of 337 to $393^{\circ}C$ with an average decomposition temperature at $582^{\circ}C$.

A Systematic Approach for Selective Epitaxial Growth of Silicon using Transport Phenomena, Thermodynamics, and Microscopic Simulation (이동현상, 열역학, 미시적 이론 연구릉 통한 선택적 단결정 실리콘 성장공정의 전산모사)

  • 윤종호;박상규
    • Journal of the Korean Vacuum Society
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    • v.3 no.4
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    • pp.466-481
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    • 1994
  • 차세대 집적회로 제조공정에 있어 핵심기술인 선택적 단결정 실리콘 성장공정에 대한 이동현상, 열역학, 미시적 전산모사를 수행하여 다각적인 분석과 이해를 시도하였다. 첫째, 실리콘 단결정 성장 공 정에 가장 많이 사용되는 배럴 반응기를 대상으로 유한 요소법을 이용하여 이동현상적 이론연구를 수행 하였다. 반응기내의 기체속도 분포, SiH2Cl2 농도분포를 각각 구하였으며 압력, 기판온도, 총유량 HCl 유 량변화 등의주요공정변수가 증착율과 균일도 지수에 미치는 영햐을 고찰하였다. 이러한 연구를 통하여 저온, 저압, 총유량이 많고 첨가되는 HCl 유량이 작은 경우가 균일도 확보를 위하여 적합한 조업조건임 을 알수 있었다. 둘째 Si-H-Cl 계에 대한 열역학적 기체의 Cl/H비가 낮은 경우가 선택적 실리콘 증착 에 적합함을 알수 있었다. 셋째, Monte Carlo법을 이용한 선택적 실리콘 미세박막 성장패턴에 관한 이 론 연구를 수행하여 종횡비, 재방출, 표면확산에 따른 박막증착 패턴의 변화를 고찰하였으며 표면확산이 선택도 상실 현상의 중요한 원인이 될 수 있음을 발견하였다. 또한 최상의 선택도 확보를위해서는 낮은 부착계수와 낮은 표면확산계수를 유지해야 됨을 알수 있었다.

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Synthesis of $H_2$-Permselective Silica Films by Chemical Vapor Deposition (화학증착(CVD)에 의한 선택적 수소 투과성 실리카막의 제조)

  • 남석우;하호용;홍성안
    • Membrane Journal
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    • v.2 no.1
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    • pp.21-32
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    • 1992
  • Hydrogen-permselective silica membranes were synthesized within tim walls of porous Vycor tubes by chemical vapor depostion of $SiO_2$. Film deposition was carried out using $SiCl_4$ hydrolysis either in the oppm shag reactants or in the one-sided geometry. At temperatures above $600^{\circ}C$ the permeation rate of hydrogen thorough the silica films varied between 0.01 and $025cm^3(STP)/cm^2-min-atm$ depending on the reaction geometry and the $H_2 : N_2$ permeation ratio was about 1000. Permeation rates of both $H_2$ and $N_2$ increased with increasing temperature. The silica membranes produced by one-sided deposition have higher hydrogen permmeation rates than those produced by the opposing reactants geometry although the membranes formed in an opposing reactants geometry were relatively stable during the heat treatment or after exposure to ambient air. These membranes can be applied to high temperature gas separations or membrane reactors once the film deposition process is optimized to get high permeability as well as good stability.

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A Study of Properties of 3C-SiC Films deposited by LPCVD with Different Films Thickness

  • Noh, Sang-Soo;Seo, Jeong-Hwan;Lee, Eung-Ahn
    • Transactions on Electrical and Electronic Materials
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    • v.9 no.3
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    • pp.101-104
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    • 2008
  • The electrical properties and microstructure of nitrogen-doped poly 3C-SiC films were studied according to different thickness. Poly 3C-SiC films were deposited by LPCVD(low pressure chemical vapor deposition) at $900^{\circ}C$ and 4 Torr using $SiH_2Cl_2$ (100 %, 35 sccm) and $C_2H_2$ (5 % in $H_2$, 180 sccm) as the Si and C precursors, and $NH_3$ (5 % in $H_2$, 64 sccm) as the dopant source gas. The resistivity of the 3C-SiC films with $1,530{\AA}$ of thickness was $32.7{\Omega}-cm$ and decreased to $0.0129{\Omega}-cm$ at $16,963{\AA}$. In XRD spectra, 3C-SiC is so highly oriented along the (1 1 1) plane at $2{\theta}=35.7^{\circ}$ that other peaks corresponding to SiC orientations are not presented. The measurement of resistance variations according to different thickness were carried out in the $25^{\circ}C$ to $350^{\circ}C$ temperature range. While the size of resistance variation decreases with increasing the films thickness, the linearity of resistance variation improved.

Optical Property of Au-doped $TIO_2/SiO_2$ thin film (금 나노미립자가 함침된 $TiO_2/SiO_2$ 박막의 광학적 성질)

  • Jung, Mie-Won;Kim, Ji-Eun;Lee, Kyung-Chul
    • Journal of the Korean Chemical Society
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    • v.44 no.1
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    • pp.60-67
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    • 2000
  • The wavelength of the surface plasmon absorption depends on the dielectric matrix. $TiO_2/SiO_2$ complex oxide films doped with Au nanoclusters were prepared by sol-gel spin-coating method using $Ti(OPr^i)_4$, $Si(OEt)_4$, and $HAuCl_4{\cdot}7H_2O$. The wavelength of the maximum absorption of Au nanoehrsters in the $TiO_2/SiO_2$ thin films was obtained with lineality from 540 nm to 615 nm depending on the molar ratio of $TiO_2$. The particle sizes and structures of these nanoclusters have been identified through a TEM and X-ray diffraction patterns. The dielectric constants of $TiO_2/SiO_2$ thin films were calculated from the experimental results.

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Vapor Etching of Silicon Substrates with HCL Gas (HCL가스에 의한 실리콘 기판의 에칭)

  • Jo, Gyeong-Ik;Yun, Dong-Han;Song, Seong-Hae
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.21 no.5
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    • pp.41-45
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    • 1984
  • The production of high-quality epitaxial layers almost always involves an etching step of silicon substrates with HCl gas prior to epitaxy, In this work, an investigation has been made on the etch rate and the etch-pit formation as a function of HCl gas concentration and etch temperature at atmospheric pressure (1 atm.) and reduced pressure (0.1 atom.). As a result, it is found that the etch rate is proportional to the square of the HCI gas concentration (XHC12) and the apparent ativation energy is between 0 and 111 Kcal/mole for both ammospheric and reduced pressure operation. From these results, it is expected that the HCI etching of silicon in reduced pressure operation proceeds, as in atmospheric operation, via the reaction ; Si + 2HCl ↔ SiCl2 + H2.

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Coating Performance of SiO2 / Epoxy Composites as a Corrosion Protector

  • Rzaij, Dina R.;Ahmed, Nagham Y.;Alhaboubi, Naseer
    • Corrosion Science and Technology
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    • v.21 no.2
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    • pp.111-120
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    • 2022
  • To solve the corrosion problem of industrial equipment and other constructions containing metals, corrosion protection can be performed by using coating which provides a barrier between the metal and its environment. Coatings play a significant role in protecting irons and steels in harsh marine and acid environments. This study was conducted to identify an anti-corrosive epoxy coating for carbon steel composite with 0.1, 0.3, and 0.5 wt% concentrations of nanoparticles of SiO2 using the dip-coating method. The electrochemical behavior was analyzed with open circuit potential (OCP) technics and polarization curves (Tafle) in 3.5 wt% NaCl and 5 vol% H2SO4 media. The structure, composition, and morphology were characterized using different analytical techniques such as X-ray Diffraction (XRD), Fourier Transform Infrared spectrum (FT-IR), and Scanning Electron Microscopy (SEM). Results revealed that epoxynano SiO2 coating demonstrated a lower corrosion rate of 2.51 × 10-4 mm/year and the efficiency of corrosion protection was as high as 99.77%. The electrochemical measurement showed that the nano-SiO2 / epoxy coating enhanced the anti-corrosive performance in both NaCl and H2SO4 media.